TAT7461
75
Ω
RF Amplifier
Applications
•
•
•
•
Distribution Amplifiers
Multi-Dwelling Units
Drop Amplifiers
Single-ended Gain Block
SOT-89 package
Product Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
50-1000 MHz bandwidth
pHEMT device technology
On-chip negative feedback providing excellent gain
and return loss consistency.
On-chip active bias for consistent bias current and
repeatable performance.
Simple external tuning allows excellent return loss.
6 V supply voltage
130 mA typical current consumption
16.1 dB typical gain
2.3 dB typical NF and < 2.6 dB up to 1000 MHz
+39 dBm typical OIP3
+22 dBm typical P1dB
Low distortion: CSO -72 dBc, CTB -88 dBc
(26 dBmV/ch at output, 80 ch)
SOT-89 package
Functional Block Diagram
4
RF IN
GND
RFOUT
General Description
The TAT7461 is a 75
Ω
RF Amplifier designed for CATV
applications to 1000 MHz. The balance of low noise,
excellent distortion, and high-gain is applicable for drop
and other distribution amplifiers.
The TAT7461 is fabricated using 6-inch GaAs pHEMT
technology to optimize performance and cost. It provides
consistent gain and return loss from the use of extensive
on-chip negative feedback. The TAT7461 also uses an on-
chip active bias for consistent bias current and repeatable
performance. Simple external tuning allows the TAT7461
to achieve excellent return loss.
Pin Configuration
Pin #
1
2
3
4
Symbol
RF IN
GND
RF OUT
GND PADDLE
Ordering Information
Part No.
TAT7461
TAT7461-EB
Description
75
Ω
High linearity pHEMT amplifier
(lead-free/RoHS compliant SOT-89 Pkg)
Amplifier Evaluation Board
Standard T/R size = 1000 pieces on a 7” reel.
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
-
1 of 8
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT7461
75
Ω
RF Amplifier
Specifications
Absolute Maximum Ratings
1
Parameter
Storage Temperature
Device Voltage
Thermal Resistance
2
(jnt to case)
θ
jc
Recommended Operating Conditions
Parameter
o
Rating
-65 to +150 C
+10 V
42
o
C/W
Min
100
Typ
6
130
Max Units
150
150
V
mA
o
C
V
DD
I
DD
T
J
(for > 10
6
hours MTTF)
Notes:
1. Operation of this device outside the parameter ranges
given above may cause permanent damage.
2. Refer to Thermal Analysis Report TAT7461, Report No.
30-0011 Rev B.
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, +6 V V
DD
Parameter
Operational Frequency Range
Gain
Gain Flatness
Noise Figure
Input Return Loss
Output Return Loss
CSO
CTB
Output IP2
Output IP3
Vsupply
I
DD
Conditions
Min
50
Typical
16.1
+/- 0.3
2.3
23
23
-72
-88
+61
+39
+6
130
Max
1000
Units
MHz
dB
dB
dB
dB
dB
dBc
dBc
dBm
dBm
V
mA
See Note 1.
See Note 1.
See Note 2.
See Note 2.
100
150
Notes:
1. 26 dBmV/ch at output, 80 ch flat
2. At 5 dBm/tone
3. Electrical specifications are measured at specified test conditions.
4. Specifications are not guaranteed over all recommended operating conditions.
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
-
2 of 8
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT7461
75
Ω
RF Amplifier
Device Characterization Data
S PARAMETER
SCHEMATIC
RF
INPUT
RF
OUT
1
TAT
7461
Measured in 50 ohms
Conversion to 75 ohms done in CAD package
Biasing done through Agilent 8753 Test Set
S-Parameter Data
V
DD
= +6 V, I
DD
= 130 mA
De-Embedded S-Parameters
20
18
16
14
12
10
8
6
4
2
0
0
6
De-Embedded S-Parameters
0
S22
5.5
5
4.5
S21
-5
S11, S12, S22 (dB)
S11
-10
-15
-20
-25
S12
S21 (dB)
3.5
3
K
2.5
2
1.5
1
K Factor
4
-30
-35
0
1
2
3
Freq (GHz)
4
5
6
1
2
3
Freq (GHz)
4
5
6
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
-
3 of 8
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Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT7461
75
Ω
RF Amplifier
Application Circuit 50-1000 MHz
APPLICATION
VDD
SCHEMATIC
+6v
C4
C1
RF
INPUT
L4
L2
L1
C3
TAT
7461
L3
C2
RF
OUT
1
Notes:
1. See PC Board Layout, page 6 for more information.
Bill of Material
Ref. Desg.
U1
L1, L2
L3
L4
C1
C2
C3, C4
J1, J2
Notes:
1. Or equivalent.
Value
880 nH
5.1 nH
2.7 nH
1000 pF
120 pF
0.01 uF
Description
75
Ω
High Linearity pHEMT Amplifier
Chip Coil, Vertical Wire Wound Ferrite, 1206, 30 %
Ceramic Chip Ind., Wire-wound, 0402, 5 %
Ceramic Chip Ind., Wire-wound, 0402, 5 %
Ceramic Chip Cap., 0402, 50 V, 10 %, X7R
Ceramic Chip Cap., 0402, 50 V, 5 %, NPO
Ceramic Chip Cap., 0402, 16 V, 10 %, X7R
75
Ω
F connector
Manufacturer Part Number
TriQuint
Murata
1
Coilcraft
Coilcraft
AVX
1
AVX
1
AVX
1
Lighthorse
1
TAT7461
LQH31HNR88K
0402CS-5N1XJLW
0402CS-2N7XJLW
04025C102KAT2A
04025A121JAT2A
0402YC103KAT
FSF55MGT-P-10A
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
-
4 of 8
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
TAT7461
75
Ω
RF Amplifier
Application Board Typical Performance
V
DD
= +6 V, I
DD
= 130 mA
Gain
17.0
16.8
16.6
16.4
-40
0
C
+25
0
C
+85
0
C
Input Return Loss
0
-5
-10
-40
0
C
+25
0
C
+85
0
C
S21 (dB)
16.2
16.0
15.8
15.6
15.4
15.2
15.0
0
325
650
Freq (MHz)
975
1300
S11 (dB)
-15
-20
-25
-30
-35
-40
0
325
650
Freq (MHz)
975
1300
CSO & CTB
-50
-60
80 ch NTSC @ +32 dBmV/ch FLAT Output
Output Return Loss
0
-5
-10
-40
0
C
+25
0
C
+85
0
C
CSO & CTB (dBc)
CSO -40
0
C
CSO +25
0
C
CSO +85
0
C
S22 (dB)
CTB -40
0
C
CTB +25
0
C
CTB +85
0
C
-70
-80
-90
-100
0
100
200
300
Freq (MHz)
4
3.5
3
2.5
-40
0
C
+25
0
C
+85
0
C
-15
-20
-25
-30
-35
-40
400
500
600
0
325
650
Freq (MHz)
975
1300
Noise Figure
NF (dB)
2
1.5
1
0.5
0
0
250
500
Freq (MHz)
750
1000
Preliminary Data Sheet: Rev C 04/30/10
© 2010 TriQuint Semiconductor, Inc.
-
5 of 8
-
Disclaimer: Subject to change without noticee
Connecting the Digital World to the Global Network
®
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