25MT060WFAPbF
Vishay High Power Products
"Full Bridge" IGBT MTP (Warp Speed IGBT), 50 A
FEATURES
• Generation 4 warp speed IGBT technology
• HEXFRED
®
antiparallel diodes with ultrasoft
reverse recovery
• Very low conduction and switching losses
• Optional SMT thermistor
• Al
2
O
3
DBC
• Very low stray inductance design for high speed operation
• Speed 8 kHz to 60 kHz > 20 kHz hard switching, > 200 kHz
resonant mode
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
MTP
PRODUCT SUMMARY
V
CES
I
C
DC
V
CE(on)
600 V
69 A
2.22 V
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Low EMI, requires less snubbing
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Continuous collector current
Pulsed collector current
Peak switching current
Diode continuous forward current
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
per single IGBT
SYMBOL
V
CES
I
C
I
CM
I
LM
I
F
I
FM
V
GE
V
ISOL
P
D
Any terminal to case, t = 1 minute
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
600
69
46
200
A
200
25
200
± 20
V
2500
195
W
78
UNITS
V
Document Number: 94539
Revision: 01-Mar-09
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
1
25MT060WFAPbF
Vishay High Power Products
"Full Bridge" IGBT MTP
(Warp Speed IGBT), 50 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
SYMBOL
V
(BR)CES
TEST CONDITIONS
V
GE
= 0 V, I
C
= 250 μA
V
GE
= 0 V, I
C
= 4 mA (25 °C to 125 °C)
V
GE
= 15 V, I
C
= 25 A
Collector to emitter saturation voltage
V
CE(on)
V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 25 A, T
J
= 150 °C
V
GE
= 15 V, I
C
= 50 A, T
J
= 150 °C
Gate threshold voltage
Temperature coefficient of threshold voltage
Transconductance
Zero gate voltage collector current
Gate to emitter leakage current
V
GE(th)
ΔV
GE(th)
/ΔT
J
g
fe
I
CES
(1)
I
GES
V
CE
= V
GE
, I
C
= 250 μA
V
CE
= V
GE
, I
C
= 250 μA (25 °C to 125 °C)
V
CE
= 100 V, I
C
= 25 A, PW = 80 μs
V
GE
= 0 V, V
CE
= 600 V, T
J
= 25 °C
V
GE
= 0 V, V
CE
= 600 V, T
J
= 150 °C
V
GE
= ± 20 V
I
C
= 25 A
Diode forward voltage drop
V
FM
I
C
= 50 A
I
C
= 25 A; T
J
= 150 °C
I
C
= 50 A; T
J
= 150 °C
Note
(1)
I
CES
includes also opposite leg overall leakage
MIN.
600
-
-
-
-
-
3
-
-
-
-
-
-
-
-
-
TYP.
-
+ 0.6
2.22
2.43
1.65
2.08
-
- 17
43
-
-
-
1.36
1.57
1.19
1.48
MAX.
-
-
3.14
3.25
1.93
2.45
6
-
-
250
10
± 250
1.64
1.93
V
1.42
1.80
mV/°C
S
μA
mA
nA
V
UNITS
V
V/°C
Temperature coefficient of breakdown voltage
ΔV
(BR)CES
/ΔT
J
SWITCHING CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Diode reverse recovery time
Diode peak reverse current
Diode Recovery charge
Diode peak rate of fall of
recovery during t
b
SYMBOL
Q
g
Q
ge
Q
gc
E
on
E
off
E
tot
E
on
E
off
E
tot
C
ies
C
oes
C
res
t
rr
I
rr
Q
rr
dI
(rec)M
/dt
V
R
= 200 V;
I
C
= 25 A;
dI/dt = 200 A/μs
TEST CONDITIONS
I
C
= 25 A
V
CC
= 480 V
V
GE
= 15 V
R
g
= 5
Ω,
I
C
= 25 A
V
CC
= 480 V
V
GE
= ± 15 V, T
J
= 25 °C
R
g
= 5
Ω,
I
C
= 25 A
V
CC
= 480 V
V
GE
= ± 15 V, T
J
= 125 °C
V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
175
27
71
0.13
0.42
0.55
0.39
0.49
0.88
3610
714
58
50
4.5
112
250
MAX.
263
41
107
0.20
0.62
0.82
mJ
0.59
0.74
1.32
5415
1071
87
-
-
-
-
ns
A
nC
A/μs
pF
nC
UNITS
www.vishay.com
2
For technical questions, contact:
indmodules@vishay.com
Document Number: 94539
Revision: 01-Mar-09
25MT060WFAPbF
"Full Bridge" IGBT MTP
Vishay High Power Products
(Warp Speed IGBT), 50 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Operating junction temperature range
Storage temperature range
IGBT
Junction to case
Diode
Case to sink per module
Clearance
(1)
Creepage
(1)
Weight
Note
(1)
Standard version only i.e. without optional thermistor
R
thJC
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
Externel shortest distance in air between 2 terminals
Shortest distance along external surface of the
insulating material between 2 terminals
SYMBOL
T
J
T
Stg
TEST CONDITIONS
MIN.
- 40
- 40
-
-
-
5.5
8
TYP. MAX. UNITS
-
-
-
-
0.06
-
-
66
150
°C
125
0.64
0.9
-
-
mm
-
g
°C/W
160
140
T
C
Case Temperature (°C)
VCE , Collector-to Emitter Voltage (V)
2.75
120
100
80
60
40
20
0
0
10 20 30 40 50 60 70 80
I
C
Maximum DC Collector Current (A)
2.25
IC = 50A
IC = 25A
1.75
IC =
12.5A
1.25
20
40
60
80
100
120
140
160
T J , Junction Temperature (°C)
Fig. 1 - Maximum Collector Current vs. Case Temperature
Fig. 2 - Typical Collector to Emitter Voltage vs.
Junction Temperature
1
D = 0.5
Thermal Response (Z
thJC
)
D = 0.2
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D =0.01
Single Pulse
(Thermal Response)
0.001
0.0001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 3 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Document Number: 94539
Revision: 01-Mar-09
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
3
25MT060WFAPbF
Vishay High Power Products
"Full Bridge" IGBT MTP
(Warp Speed IGBT), 50 A
10
Thermal Response (Z
thJC
)
thJC
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
0.1
1
t
1
, Rectangular Pulse Duration (sec)
Fig. 4 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
7000
6000
5000
1.5
VGE = 0V, f = 1 MHZ
C
= C +C , C SHORTED
ies
ge
gc ce
C res = C gc
C
Cies
Switching Losses (mJ)
oes
=C
ce
+C
gc
VCC = 480V
VGE = 15V
TJ = 25°C
I C = 25A
1.0
Capacitance (pF)
EOFF
4000
3000
EON
0.5
Coes
2000
1000
Cres
0
1
10
100
1000
0.0
0
10
20
30
40
50
60
VCE (V)
RG , Gate Resistance ( Ω )
Fig. 5 - Typical Capacitance vs. Collector to Emitter Voltage
Fig. 7 - Typical Switching Losses vs. Gate Resistance
16.0
IC= 25A
VCE = 480V
10
RG = 5.0Ω
VGE = 15V
VCC = 480V
VGE , Gate-to-Emitter Voltage (V)
12.0
Total Switching Losses (mJ)
I C = 50A
8.0
1
I C = 25A
I C = 12.5A
4.0
0.0
0
50
100
150
200
0.1
20
40
60
80
100
120
140
160
Q G, Total Gate Charge (nC)
T J , Junction Temperature (°C)
Fig. 6 - Typical Gate Charge vs. Gate to Emitter Voltage
Fig. 8 - Typical Switching Losses vs. Junction Temperature
www.vishay.com
4
For technical questions, contact:
indmodules@vishay.com
Document Number: 94539
Revision: 01-Mar-09
25MT060WFAPbF
"Full Bridge" IGBT MTP
Vishay High Power Products
(Warp Speed IGBT), 50 A
2.0
RG = 5.0Ω
TJ = 25°C
VGE = 15V
140
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
120
EOFF
Switching Losses (mJ)
1.5
VCC = 480V
100
1.0
trr- (nC)
80
I
F
= 50A
I
F
= 25A
I
F
= 10A
0.5
EON
60
40
0.0
0
10
20
30
40
50
60
20
100
IC, Collector Current (A)
di f /dt - (A/μs)
1000
Fig. 9 - Typical Switching Losses vs.
Collector to Emitter Current
1000
Fig. 12 - Typical Reverse Recovery Time vs. dI
F
/dt
IC, Collector-to-Emitter Current (A)
VGE = 20V
TJ = 125°
30
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
25
100
20
I
F
= 50A
I
F
= 25A
Irr- ( A)
I
F
= 10A
15
10
10
SAFE OPERATING AREA
1
1
10
100
1000
5
0
100
A
1000
VCE, Collector-to-Emitter Voltage (V)
di
f
/dt - (A/μs)
Fig. 10 - Turn-Off SOA
100
Fig. 13 - Typical Reverse Recovery Current vs. dI
F
/dt
1400
Instantaneous Forward Current - I F ( A )
1200
V
R
= 200V
T
J
= 125°C
T
J
= 25°C
1000
I
F
= 50A
I
F
= 25A
I
F
= 10A
T J = 125°C
T J = 25°C
Qrr- (nC)
10
T J = 150°C
800
600
400
200
0
100
1
0.4
0.8
1.2
1.6
2.0
2.4
Forward Voltage Drop - V F ( V )
di
f
/dt - (A/μs)
1000
Fig. 11 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
Document Number: 94539
Revision: 01-Mar-09
Fig. 14 - Typical Stored Charge vs. dI
F
/dt
For technical questions, contact:
indmodules@vishay.com
www.vishay.com
5
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