JANS_2N3700
RADIATION HARDENED LOW POWER
NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/391
DESCRIPTION
This NPN leaded metal device is RAD hard qualified for high-reliability applications. Microsemi
also offers numerous other products to meet higher and lower power voltage regulation
applications.
Qualified Levels:
JANSM, JANSD,
JANSP, JANSL,
JANSR and JANSF
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
JEDEC registered 2N3700.
RHA level JAN qualifications per MIL-PRF-19500/391 (see
part nomenclature
for all options).
TO-18
(TO-206AA)
Package
Also available in:
APPLICATIONS / BENEFITS
•
•
•
•
Leaded TO-18 package.
Lightweight.
Low power.
Military and other high-reliability applications.
UB package
(leaded)
JANS_2N3700UB
TO-39
(TO-205AD)
(leaded)
JANS_2N3019, 2N3019S
TO-46
(TO-206AB)
(leaded)
JANS_2N3057A
MAXIMUM RATINGS
@
T
A
= +25 C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Impedance Junction-to-Ambient
Thermal Impedance Junction-to-Case
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
o
(1)
Total Power Dissipation:
@ T
A
= +25 C
o
(2)
@ T
C
= +25 C
Notes:
1. Derate linearly 2.85 mW/°C for T
A
≥
+25 °C.
2. Derate linearly 10.3 mW/°C for T
C
≥ +25 °C.
o
Symbol
T
J
and T
STG
R
ӨJA
R
ӨJC
V
CEO
V
CBO
V
EBO
I
C
P
D
Value
-65 to +200
325
150
80
140
7.0
1.0
0.5
1.0
Unit
C
C/W
o
C/W
V
V
V
A
W
o
o
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
T4-LDS-0263, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 1 of 7
JANS_2N3700
MECHANICAL and PACKAGING
•
•
•
•
•
CASE: Hermetically sealed, nickel plated kovar base, nickel cap.
TERMINALS: Gold plate over nickel kovar.
MARKING: Part number, date code, manufacturer’s ID, and serial number.
WEIGHT:
Approximately 0.3 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JANSM
Reliability Level
JANSM = 3K Rads (Si)
JANSD = 10K Rads (Si)
JANSP = 30K Rads (Si)
JANSL = 50K Rads (Si)
JANSR = 100K Rads (Si)
JANSF = 300K Rads (Si)
2N3700
JEDEC type number
Symbol
f
I
B
I
E
T
A
T
C
V
CB
V
CE
V
EB
SYMBOLS & DEFINITIONS
Definition
frequency
Base current (dc)
Emitter current (dc)
Ambient temperature
Case temperature
Collector to base voltage (dc)
Collector to emitter voltage (dc)
Emitter to base voltage (dc)
T4-LDS-0263, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 2 of 7
JANS_2N3700
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I
C
= 30 mA
Collector-Base Cutoff Current
V
CB
= 140 V
Emitter-Base Cutoff Current
V
EB
= 7 V
Collector-Emitter Cutoff Current
V
CE
= 90 V
Emitter-Base Cutoff Current
V
EB
= 5.0 V
(1)
ON CHARACTERISTICS
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 1.0 A, V
CE
= 10 V
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
Symbol
Min.
Max.
Unit
V
(BR)CEO
I
CBO
I
EBO1
I
CES
I
EBO2
80
10
10
10
10
V
µA
µA
ηA
ηA
h
FE
100
50
90
50
15
300
300
300
V
CE(sat)
V
BE(sat)
0.2
0.5
1.1
V
V
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 1.0 mA, V
CE
= 5.0 V, f = 1.0 kHz
Magnitude of Small-Signal Short-Circuit Forward Current
Transfer Ratio
I
C
= 50 mA, V
CE
= 10 V, f = 20 MHz
Output Capacitance
V
CB
= 10 V, I
E
= 0, 100 kHz ≤ f ≤ 1.0 MHz
Input Capacitance
V
EB
= 0.5 V, I
C
= 0, 100 kHz ≤ f ≤ 1.0 MHz
(1) Pulse Test: Pulse Width = 300 µs, duty cycle ≤ 2.0%.
Symbol
h
fe
|h
fe
|
C
obo
C
ibo
Min.
80
5.0
Max.
400
20
12
60
Unit
pF
pF
T4-LDS-0263, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 3 of 7
JANS_2N3700
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
SAFE OPERATION AREA
(See SOA graph below and
MIL-STD-750, method 3053)
DC Tests
T
C
= 25 °C, 1 cycle, t = 10 ms
Test 1
2N3700
Test 2
2N3700
Test 3
2N3700
V
CE
= 10 V
I
C
= 180 mA
V
CE
= 40 V
I
C
= 45 mA
V
CE
= 80 V
I
C
= 22.5 mA
I
C
– COLLECTOR CURRENT - A
V
CE
– COLLECTOR – EMITTER VOLTAGE – V
Maximum Safe Operating Area
T4-LDS-0263, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 4 of 7
JANS_2N3700
ELECTRICAL CHARACTERISTICS
@ T
A
= +25 °C, unless otherwise noted (continued)
POST RADIATION ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Collector to Base Cutoff Current
V
CB
= 140 V
Emitter to Base Cutoff Current
V
EB
= 7 V
Collector to Emitter Breakdown Voltage
I
C
= 30 mA
Collector-Emitter Cutoff Current
V
CE
= 90 V
Emitter-Base Cutoff Current
V
EB
= 5.0 V
(2)
Forward-Current Transfer Ratio
I
C
= 150 mA, V
CE
= 10 V
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 1 A, V
CE
= 10 V
Collector-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
Base-Emitter Saturation Voltage
I
C
= 150 mA, I
B
= 15 mA
[h
FE
]
Symbol
I
CBO
I
EBO
V
(BR)CEO
I
CES
I
EBO
[50]
[25]
[45]
[25]
[7.5]
V
CE(sat)
V
BE(sat)
0.23
0.58
1.27
V
V
300
80
20
20
300
300
Min.
Max.
20
20
Unit
µA
µA
V
ηA
ηA
(2) See method 1019 of MIL-STD-750 for how to determine [h
FE
] by first calculating the delta (1/h
FE
) from the pre- and post-
radiation h
FE
. Notice the [h
FE
] is not the same as h
FE
and cannot be measured directly. The [h
FE
] value can never exceed
the pre-radiation minimum h
FE
that it is based upon.
T4-LDS-0263, Rev. 1 (120784)
©2012 Microsemi Corporation
Page 5 of 7
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