DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
M3D087
PZT2222A
NPN switching transistor
Product data sheet
Supersedes data of 1997 Jun 02
1999 Apr 14
NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
High current (max. 600 mA)
•
Low voltage (max. 40 V).
APPLICATIONS
•
Switching and linear amplification.
DESCRIPTION
NPN switching transistor in a SOT223 plastic package.
PNP complement: PZT2907A.
1
4
PZT2222A
PINNING
PIN
1
2, 4
3
base
collector
emitter
DESCRIPTION
handbook, halfpage
2, 4
3
1
Top view
2
3
MAM287
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
75
40
6
600
800
200
1.15
+150
150
+150
UNIT
V
V
V
mA
mA
mA
W
°C
°C
°C
1999 Apr 14
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
R
th j-s
Note
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
PZT2222A
VALUE
109
28
UNIT
K/W
K/W
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
amb
= 125
°C
I
C
= 0; V
EB
= 5 V
I
C
= 0.1 mA; V
CE
= 10 V
I
C
= 1 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V
I
C
= 10 mA; V
CE
= 10 V;
T
amb
=
−55 °C
I
C
= 150 mA; V
CE
= 1 V; note 1
I
C
= 150 mA; V
CE
= 10 V; note 1
I
C
= 500 mA; V
CE
= 10 V; note 1
V
CEsat
V
BEsat
C
c
C
e
f
T
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
I
C
= 20 mA; V
CE
= 20 V; f = 100 MHz
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
−15
mA; T
amb
= 25
°C
−
−
−
35
50
75
35
50
100
40
−
−
0.6
−
−
−
300
−
−
−
−
−
−
MIN.
MAX.
10
10
10
−
−
−
−
−
300
−
300
1
1.2
2
8
25
−
mV
V
V
V
pF
pF
MHz
UNIT
nA
µA
nA
Switching times (between 10% and 90% levels);
(see Fig.2)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
35
10
25
250
200
60
ns
ns
ns
ns
ns
ns
1999 Apr 14
3
NXP Semiconductors
Product data sheet
NPN switching transistor
PZT2222A
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MLB826
V
i
= 9.5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 68
Ω;
R2 = 325
Ω;
R
B
= 325
Ω;
R
C
= 160
Ω.
V
BB
=
−3.5
V; V
CC
= 29.5 V.
Oscilloscope input impedance Z
i
= 50
Ω.
Fig.2 Test circuit for switching times.
1999 Apr 14
4
NXP Semiconductors
Product data sheet
NPN switching transistor
PACKAGE OUTLINE
PZT2222A
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
E
b
1
v
M
A
4
Q
A
A
1
1
e
1
e
2
b
p
3
w
M
B
detail X
L
p
0
2
scale
4 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.8
1.5
A
1
0.10
0.01
b
p
0.80
0.60
b
1
3.1
2.9
c
0.32
0.22
D
6.7
6.3
E
3.7
3.3
e
4.6
e
1
2.3
H
E
7.3
6.7
L
p
1.1
0.7
Q
0.95
0.85
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT223
REFERENCES
IEC
JEDEC
EIAJ
SC-73
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
1999 Apr 14
5
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