Si6968EDQ-REVA
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
Common Drain, ESD Protection
FEATURES
PRODUCT SUMMARY
V
DS
(V)
20
D
TrenchFETr Power MOSFET
D
ESD Protected: 3000 V
I
D
(A)
6.5
5.5
r
DS(on)
(Ω)
0.022 @ V
GS
= 4.5 V
0.030 @ V
GS
= 2.5 V
D
D
TSSOP-8
D
S
1
S
1
G
1
1
2
3
4
Top View
N-Channel
S
1
N-Channel
S
2
D
Si6968EDQ-REVA
8 D
7 S
2
6 S
2
5 G
2
*130
Ω
G
1
G
2
*130
Ω
*Typical value by design
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
10 secs
20
12
6.5
5.5
30
1.5
1.5
0.96
Steady State
Unit
V
5.2
3.5
1.0
1.0
0.64
--55 to 150
W
_C
A
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on FR4 Board, t
≤
10 sec.
Document Number: 71802
S-21454—Rev. D, 19-Aug-02
www.vishay.com
t
≤
10 sec
Steady-State
Steady-State
Symbol
R
thJA
R
thJF
Typ
72
100
55
Max
83
120
70
Unit
_C/W
C/
1
Si6968EDQ-REVA
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
b
Drain-Source On-State
Drain Source On State Resistance
b
Forward Transconductance
b
Diode Forward Voltage
b
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS( )
DS(on)
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
4.5
V
V
DS
= 16 V, V
GS
= 0 V
V
DS
= 16 V, V
GS
= 0 V, T
J
= 70_C
V
DS
≤
5 V, V
GS
= 4.5 V
V
GS
= 4.5 V, I
D
= 6.5 A
V
GS
= 2.5 V, I
D
= 5.5 A
V
DS
= 10 V, I
D
= 6.5 A
I
S
= 1.5 A, V
GS
= 0 V
30
0.018
0.024
25
0.71
1.2
0.022
0.030
0.6
200
1
25
V
nA
mA
A
Ω
S
V
Symbol
Test Condition
Min
Typ
a
Max
Unit
Dynamic
a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 10 V, R
L
= 10
Ω
I
D
≅
1 A, V
GEN
= 4.5 V, R
G
= 6
Ω
V
DS
= 10 V, V
GS
= 4.5 V, I
D
= 6.5 A
16
2.5
5.5
140
230
600
450
210
350
900
700
ns
25
nC
Notes
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
≤
300
ms,
duty cycle
≤
2%.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V
GS
= 5 thru 2.5 V
24
I
D
-- Drain Current (A)
I
D
-- Drain Current (A)
24
30
Transfer Characteristics
18
2V
12
18
12
T
C
= 125_C
6
25_C
0
0.0
--55_C
1.5
2.0
2.5
3.0
6
1.5 V
0
0
1
2
3
4
5
V
DS
-- Drain-to-Source Voltage (V)
0.5
1.0
V
GS
-- Gate-to-Source Voltage (V)
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Document Number: 71802
S-21454—Rev. D, 19-Aug-02
Si6968EDQ-REVA
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
r
DS(on)
-- On-Resistance (
Ω
)
0.04
0.03
V
GS
= 2.5 V
0.02
V
GS
= 4.5 V
0.01
0.00
0
6
12
18
24
30
I
D
-- Drain Current (A)
Gate Charge
6
V
GS
-- Gate-to-Source Voltage (V)
5
4
3
2
1
0
0
4
8
12
16
20
Q
g
-- Total Gate Charge (nC)
V
DS
= 10 V
I
D
= 6.5 A
1.6
On-Resistance vs. Junction Temperature
V
GS
= 4.5 V
I
D
= 6.5 A
1.4
r
DS(on)
-- On-Resistance (
Ω)
(Normalized)
1.2
1.0
0.8
0.6
--50
--25
0
25
50
75
100
125
150
T
J
-- Junction Temperature (_C)
Source-Drain Diode Forward Voltage
30
0.10
On-Resistance vs. Gate-to-Source Voltage
10
r
DS(on)
-- On-Resistance (
Ω
)
0.08
I
S
-- Source Current (A)
0.06
I
D
= 6.5 A
T
J
= 150_C
T
J
= 25_C
0.04
0.02
1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
V
SD
-- Source-to-Drain Voltage (V)
V
GS
-- Gate-to-Source Voltage (V)
Document Number: 71802
S-21454—Rev. D, 19-Aug-02
www.vishay.com
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Si6968EDQ-REVA
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.4
30
25
I
D
= 250
mA
20
Power (W)
--0.0
15
Single Pulse Power, Junction-to-Ambient
0.2
V
GS(th)
Variance (V)
--0.2
10
--0.4
5
--0.6
--50
--25
0
25
50
75
100
125
150
0
10
--2
10
--1
1
Time (sec)
10
100
T
J
-- Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
--4
10
--3
10
--2
10
--1
1
Square Wave Pulse Duration (sec)
Notes:
P
DM
t
1
t
2
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
-
4. Surface Mounted
t
1
t
2
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
--4
10
--3
10
--2
10
--1
Square Wave Pulse Duration (sec)
1
10
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Document Number: 71802
S-21454—Rev. D, 19-Aug-02
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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