Si3861DV
New Product
Vishay Siliconix
Load Switch with Level-Shift
PRODUCT SUMMARY
V
DS2
(V)
r
DS(on)
(W)
0.105 @ V
IN
= 10 V
4.5
4 5 to 20
0.150 @ V
IN
= 5.0 V
0.175 @ V
IN
= 4.5 V
I
D
(A)
"2.3
"1.9
"1.7
4.5 V Rated
D
Low Profile, Small Footprint TSOP-6 Package
D
3000-V ESD Protection On Input Switch, V
ON/OFF
D
Adjustable Slew-Rate
FEATURES
D
105-mW Low r
DS(on)
TrenchFETt
D
4.5 to 20
-V Input
D
1.5 to 8
-V Logic Level Control
DESCRIPTION
The Si3861DV includes a p- and n-channel MOSFET in a
single TSOP-6 package. The low on-resistance p-channel
TrenchFET
R
is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a
level-shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5-V. The Si3861DV operates on
supply lines from 4.5 to 20-V, and can drive loads up to 2.3 A.
APPLICATION CIRCUITS
Si3861DV
20
4
V
IN
Q2
R1
6
6
C1
Time (
mS)
12
2, 3
V
OUT
16
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
d(off)
8
t
r
4
t
d(on)
C
i
1
R2
R2
GND
Note: For R2 switching variations with other V
IN
/R1
combinations See Typical Characteristics
0
0
2
4
R2 (kW)
6
8
10
Switching Variation
R2 @ V
IN
= 5 V, R1 = 20 kW
t
f
5
ON/OFF
Q1
C
o
LOAD
COMPONENTS
R1
R2
C1
Pull-Up Resistor
Optional Slew-Rate Control
Optional Slew-Rate Control
Typical 10 kW to 1 mW*
Typical 0 to 100 kW*
Typical 1000 pF
The Si3861DV is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
www.vishay.com
S
FaxBack 408-970-5600
2-1
Si3861DV
Vishay Siliconix
FUNCTIONAL BLOCK DIAGRAM
Si3861DV
TSOP-6
Top View
S2
Q2
R2
1
6
R1, C1
6
R1, C1
D2
2
5
ON/OFF
5
ON/OFF
Q1
4
2, 3
D2
New Product
D2
3
4
S2
1
R2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Input Voltage
ON/OFF Voltage
Load Current
Continuous Intrinsic Diode
Conduction
a
Continuous
a, b
Pulsed
b, c
Symbol
V
IN
V
ON/OFF
I
L
I
S
P
D
T
J
, T
stg
ESD
Limit
20
8
"2.3
"4
–1
0.83
–55 to 150
3
Unit
V
A
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500
W)
W
_C
kV
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient (continuous current)
a
Maximum Junction-to-Foot (Q2)
Symbol
R
thJA
R
thJC
Typical
120
35
Maximum
150
50
Unit
_C/W
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
OFF Characteristics
Reverse Leakage Current
Diode Forward Voltage
I
FL
V
SD
V
IN
= 30 V, V
ON/OFF
= 0 V
I
S
= –1 A
–0.8
1
–1
mA
V
Symbol
Test Condition
Min
Typ
Max
Unit
ON Characteristics
Input Voltage Range
V
IN
V
IN
= 10 V
On-Resistance ( h
O R i
(p-channel) @ 1 A
l)
r
DS(on)
V
ON/OFF
= 1 5 V
1.5
I
D
= 1 A
V
IN
= 5.0 V
V
IN
= 4.5 V
On-State (p-channel) Drain-Current
I
D(on)
V
IN-OUT
v
0.2 V, V
IN
= 10 V, V
ON/OFF
= 1.5 V
V
IN-OUT
v
0.3 V, V
IN
= 5 V, V
ON/OFF
= 1.5 V
1
1
4.5
0.085
0.123
0.145
20
0.105
0.150
0.175
A
W
V
Notes
a. Surface Mounted on FR4 Board.
b. V
IN
= 12, V
ON/OFF
= 8 V, T
A
= 25_C.
c. Pulse test: pulse width
v300
ms,
duty cycle
v2%.
www.vishay.com
S
FaxBack 408-970-5600
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
2-2
Si3861DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
V
DROP
vs. I
L
@ V
IN
= 10 V
0.6
V
ON/OFF
= 1.5 to 8 V
0.6
0.5
0.4
T
J
= 125_C
0.3
0.2
0.1
0
0
1
2
I
L
– (A)
3
4
5
0
1
2
I
L
– (A)
3
4
5
T
J
= 25_C
Vishay Siliconix
V
DROP
vs. I
L
@ V
IN
= 5 V
V
ON/OFF
= 1.5 to 8 V
0.5
0.4
V
DROP
(V)
T
J
= 125_C
0.3
T
J
= 25_C
0.2
V
DROP
(V)
0.1
0
V
DROP
vs. I
L
@ V
IN
= 4.5 V
0.6
1.0
V
DROP
vs. V
IN
@ I
L
= 1 A
I
L
= 1 A
V
ON/OFF
= 1.5 to 8 V
0.5
T
J
= 125_C
V
DROP
(V)
V
DROP
(V)
0.4
T
J
= 25_C
0.3
0.8
0.6
0.4
T
J
= 125_C
0.2
T
J
= 25_C
0.2
V
ON/OFF
= 1.5 to 8 V
0.1
0
0
1
2
I
L
– (A)
3
4
5
0
2
4
V
IN
(V)
6
8
10
0
V
DROP
Variance vs. Junction Temperature
0.08
I
L
= 1 A
V
ON/OFF
= 1.5 to 8 V
0.8
V
IN
= 5 V
r
SS(on)
– On-Resistance (
W
)
1.0
On-Resistance vs. Input Voltage
I
L
= 1 A
V
ON/OFF
= 1.5 to 8 V
0.06
V
DROP
Variance (V)
0.04
0.6
0.02
V
IN
= 10 V
0.4
T
J
= 125_C
0.2
T
J
= 25_C
0.00
–0.02
–0.04
–50
0
–25
0
25
50
75
100
125
150
0
2
4
V
IN
(V)
6
8
10
T
J
– Junction Temperature (_C)
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
www.vishay.com
S
FaxBack 408-970-5600
2-3
Si3861DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized On-Resistance
vs. Junction Temperature
1.8
1.6
r
DS(on)
– On-Resistance (
W)
(Normalized)
1.4
Time (
mS)
1.2
1.0
0.8
8
0.6
0.4
–50
0
–25
0
25
50
75
100
125
150
0
2
4
R2 (kW)
6
8
10
T
J
– Junction Temperature (_C)
t
r
V
IN
= 5 V
24
t
d(off)
I
L
= 1 A
V
ON/OFF
= 1.5 to 8 V
V
IN
= 10 V
32
40
Switching Variation
R2 @ V
IN
= 10 V, R1 = 20 kW
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
f
16
t
d(on)
20
Switching Variation
R2 @ V
IN
= 5 V, R1 = 20 kW
t
f
50
Switching Variation
R2 @ V
IN
= 4.5 V, R1 = 20 kW
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
r
16
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
d(off)
8
t
r
4
t
d(on)
0
0
2
4
R2 (kW)
6
8
10
40
Time (
mS)
12
Time (
mS)
30
20
t
f
10
t
d(off)
t
d(on)
0
0
2
4
R2 (kW)
6
8
10
400
Switching Variation
R2 @ V
IN
= 10 V, R1 = 300 kW
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
Time (
mS)
t
d(off)
200
Switching Variation
R2 @ V
IN
= 5 V, R1 = 300 kW
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
320
160
t
d(off)
Time (
mS)
240
120
t
f
160
t
f
80
t
d(on)
t
r
80
t
r
t
d(on)
40
0
0
20
40
R2 (kW)
60
80
100
0
0
20
40
R2 (kW)
60
80
100
www.vishay.com
S
FaxBack 408-970-5600
2-4
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
Si3861DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Variation
R2 @ V
IN
= 4.5 V, R1 = 300 kW
Vishay Siliconix
150
120
t
f
t
d(off)
Time (
mS)
90
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10
mF
C
o
= 1
mF
t
r
t
d(on)
60
30
0
0
20
40
60
R2 (kW)
80
100
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
Notes:
0.1
0.1
0.05
0.02
P
DM
t
1
t
2
1. Duty Cycle, D =
t
1
t
2
2. Per Unit Base = R
thJA
= 150_C/W
Single Pulse
0.01
10
–4
10
–3
10
–2
10
–1
1
3. T
JM
– T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
10
100
600
Square Wave Pulse Dureation (sec)
Document Number: 70861
S-60513—Rev. A, 05-Apr-99
www.vishay.com
S
FaxBack 408-970-5600
2-5
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
