LND250
Features
►
►
►
►
►
►
►
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Excellent thermal stability
Integral source-drain diode
High input impedance and low C
ISS
ESD gate protection
Applications
►
►
►
►
►
►
Solid state relays
Normally-on switches
Converters
Power supply circuits
Constant current sources
Input protection circuits
Ordering Information
Device
LND250
-G indicates package is RoHS compliant (‘Green’)
R
Absolute Maximum Ratings
Parameter
Drain-to-source
Drain-to-gate
Gate-to-source
Operating and storage temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
fo R
ef r e
er N co
ew m
to
m
D e
LN e
n
D si d
15 gn e
d
0 s
K
1-
G
General Description
Package Option
LND250K1-G
BV
DSX
/BV
DGX
(V)
N-Channel Depletion-Mode
DMOS FET
The LND250 is a high voltage N-channel depletion mode
(normally-on) transistor utilizing Supertex’s lateral DMOS
technology. The gate is ESD protected.
The LND250 is ideal for high voltage applications in the
areas of normally-on switches, precision constant current
sources, voltage ramp generation and amplification.
ot
N
R
DS(ON)
(max)
(KΩ)
I
DSS
1.0
TO-236AB (SOT-23)
(min)
(mA)
500
1.0
Pin Configuration
SOURCE
DRAIN
GATE
TO-236AB (SOT-23) (K1)
Product Marking
NDEW
W = Code for Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-236AB (SOT-23) (K1)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
LND250
Thermal Characteristics
Package
TO-236AB (SOT-23)
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
Sym
Parameter
BV
DSX
V
GS(OFF)
I
GSS
Gate-to-source off voltage
ΔV
GS(OFF)
Change in V
GS(OFF)
with temperature
Gate body leakage current
I
D(OFF)
I
DSS
R
DS(ON)
G
FS
ΔR
DS(ON)
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
f
t
d(OFF)
V
SD
t
rr
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
ot
R fo R
ef r e
er N co
ew m
to
m
D e
LN e
n
D si d
15 gn e
d
0 s
K
1-
G
(continuous)
(mA)
†
I
D
(pulsed)
(mA)
I
D
Power Dissipation
@T
A
= 25 C
(W)
O
(
O
C/W)
θ
jc
(
O
C/W)
θ
ja
(mA)
I
DR
13
I
DRM
†
(mA)
13
30
0.36
200
350
30
A
= 25
O
C unless otherwise specified)
Min
500
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
-
-3.0
5.0
100
100
100
3.0
1.2
-
10
Units
V
V
Conditions
Drain-to-source breakdown voltage
V
GS
= -10V, I
D
= 1.0mA
V
GS
= 25V, I
D
= 100nA
V
GS
= ± 20V, V
DS
= 0V
-1.0
mV/
O
C V
GS
= 25V, I
D
= 100nA
nA
nA
Drain-to-source leakage current
V
GS
= -10V, V
DS
= 450V
µA
Ω
V
DS
= 0.8V Max Rating,
V
GS
= -10V, T
A
= 125
O
C
V
GS
= 0V, V
DS
= 25V
V
GS
= 0V, I
D
= 0.5mA
V
GS
= 0V, I
D
= 0.5mA
V
GS
= -10V,
V
DS
= 25V,
f = 1.0MHz
Saturated drain-to-source current
1.0
mA
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
850
1000
%/
O
C
1000 2000
7.5
2.0
0.5
mmho V
DS
= 0V, I
D
= 1.0mA
pF
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Fall time
Turn-off delay time
3.5
1.0
-
-
-
-
-
0.09
0.45
0.1
1.3
-
N
µs
V
DD
= 25V,
I
D
= 1.0mA,
R
GEN
= 25Ω
Diode forward voltage drop
Reverse recovery time
0.9
V
V
GS
= -10V, I
SD
= 1.0mA
V
GS
= -10V, I
SD
= 1.0mA
200
ns
90%
10%
t
(ON)
V
DD
PULSE
GENERATOR
R
L
OUTPUT
INPUT
-10V
t
(OFF)
t
r
t
d(OFF)
t
F
10%
t
d(ON)
V
DD
R
GEN
10%
90%
D.U.T.
INPUT
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
LND250
3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
Symbol
Dimension
(mm)
fo R
ef r e
er N co
ew m
to
m
D e
LN e
si nd
D
15 gn e
d
0 s
K
1-
G
Top View
View B
Side View
View A - A
A
-
A1
-
A2
b
-
D
E
-
E1
e
e1
L
L1
MIN
0.89
1.12
0.01
0.10
0.88
0.95
1.02
0.30
0.50
2.80
2.90
3.04
2.10
2.64
1.20
1.30
1.40
NOM
MAX
View B
N
ot
θ
-
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO236ABK1, Version B072208.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
website: http//www.supertex.com.
©2009
All rights reserved. Unauthorized use or reproduction is prohibited.
R
0.95
BSC
1.90
BSC
0.20
†
0.50
0.60
0.54
REF
0
O
8
O
Doc.# DSFP-LND250
A012809
3
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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