SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 4 JUNE 1996
PARTMARKING DETAILS
BC807
5DZ
BC807-16 5AZ
BC807-25 5BZ
BC807-40 5CZ
COMPLEMENTARY TYPES
BC808
5HZ
BC808-16 5EZ
BC808-25 5FZ
BC808-40 5GZ
BC807
BC808
BC817
BC818
BC807
BC808
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Peak Base Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
I
BM
P
tot
T
j
:T
stg
BC807
-50
-45
-5
-1
-500
-100
-200
330
-55 to +150
SOT23
BC808
-30
-25
UNIT
V
V
V
A
mA
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
100
40
100
160
250
f
T
C
obo
100
8.0
MIN. TYP. MAX. UNIT CONDITIONS.
-0.1
-5
-10
-700
-1.2
600
250
400
600
MHz
pF
µ
A
µ
A
µ
A
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static Forward Current
Transfer Ratio
-16
-25
-40
Transition
Frequency
Collector-base
Capacitance
V
CB
=-20V, I
E
=0
V
CB
=-20V, I
E
=0, T
amb
=150°C
V
EB
=-5V, I
C
=0
I
C
=-500mA, I
B
=-50mA*
I
C
=-500mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-100mA, V
CE
=-1V*
I
C
=-10mA, V
CE
=-5V
f=35MHz
I
E
=I
e
=0, V
CB
=-10V
f=1MHz
mV
V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
3-9
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