Si4806DY
Vishay Siliconix
N-Channel 30:1 Ratio Dual-Gate 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
Gate 1
30
Gate 2
FEATURES
r
DS(on)
(W)
I
D
(A)
7.7
6.4
2.0
1.5
D
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
0.022 @ V
GS
= 10 V
0.03 @ V
GS
= 4.5 V
0.25 @ V
GS
= 10 V
0.40 @ V
GS
= 4.5 V
SO-8
G
2
G
1
S
S
1
2
3
4
Top View
8
7
6
5
NC
D
D
D
G
1
G
2
Ordering Information: Si4806DY
Si4806DY-T1 (with Tape and Reel)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
stg
Gate 1
30
"20
7.7
4.4
40
2
2.3
1.0
Gate 2
Unit
V
6.4
6.0
4.0
A
W
_C
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
Document Number: 70657
S-31726—Rev. D, 18-Aug-03
www.vishay.com
Symbol
R
thJA
Limit
55
Unit
_C/W
1
Si4806DY
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS1(on)
Drain-Source On State
Drain Source On-State Resistance
a
r
DS2( )
DS2(on)
Forward Transconductance
a
Diode Forward Voltage
a
g
fs
V
SD
V
DS
= V
GS
, I
D
= 250
mA
V
DS
= 0 V, V
GS
=
"20
V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55_C
(G
1
= G
2
) V
DS
= 5 V, V
GS
= 10 V
(G
1
= G
2
) V
GS
= 10 V, I
D
= 7.7 A
(G
1
= G
2
) V
GS
= 4.5 V, I
D
= 6.4 A
V
G1S
= 0 V, V
G2S
= 10 V, I
D
= 2.0 A
V
G1S
= 0 V, V
G2S
= 4.5 V, I
D
= 0.3 A
V
DS
= 15 V, I
D
= 7.7 A
I
S
= 2 A, V
GS
= 0 V
40
0.017
0.021
0.20
0.30
21
0.72
1.1
0.022
0.03
0.25
0.40
S
V
W
1
"100
1
5
V
nA
mA
A
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Total Gate Charge
Q
g
Gate 1
V
DS
= 15 V, V
GS(1, 2)
= 10 V
( , )
I
D
= 7.7 A
77
Gate 2
V
DS
= 15 V, V
GS(1)
= 0 V
,
V
GS(2)
= 10 V I
D
= 2.0 A
V,
20
Gate 1
Gate 2
Gate 1
Gate 2
Gate 1
Gate 2
Gate 1
Gate 2
0.4
3
12
V
DD
= 15 V, R
L
= 15
W
I
D
^
1 A, V
GEN
= 10 V, R
G
= 6
W
9
55
15
I
F
= 2 A, di/dt = 100 A/ms
40
34
2.2
6.5
0.5
5.2
0.28
2.7
10
15
20
80
30
60
ns
W
60
5
nC
Gate-Source
Gate Source Charge
Q
gs
Q
gd
d
R
g
t
d(on)
t
r
t
d(off)
t
f
t
rr
Gate-Drain
Gate Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Notes
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
Document Number: 70657
S-31726—Rev. D, 18-Aug-03
Si4806DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (V
G1
= V
G2
, 25_C UNLESS NOTED)
40
Output Characteristics
V
GS
= 10 thru 4 V
40
Transfer Characteristics
32
I
D
- Drain Current (A)
I
D
- Drain Current (A)
32
24
24
16
3V
2, 1 V
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
16
T
C
= 125_C
8
25_C
- 55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
8
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.05
3500
3000
Capacitance
r
DS(on)
- On-Resistance (
W
)
0.04
C - Capacitance (pF)
2500
2000
1500
1000
500
0
0
8
16
24
32
40
0
6
12
18
24
30
I
D
- Drain Current (A)
10
V
DS
= 15 V
I
D
= 7.7 A
V
DS
- Drain-to-Source Voltage (V)
1.8
1.6
r
DS(on)
- On-Resistance (
W
)
(Normalized)
1.4
1.2
1.0
0.8
0.6
0.4
- 50
C
rss
C
iss
0.03
V
GS
= 4.5 V
0.02
V
GS
= 10 V
0.01
C
oss
0.00
Gate Charge
On-Resistance vs. Junction Temperature
V
GS
= 10 V
I
D
= 7.7 A
V
GS
- Gate-to-Source Voltage (V)
8
6
4
2
0
0
7
14
21
28
35
Q
g
- Total Gate Charge (nC)
0
50
100
150
T
J
- Junction Temperature (_C)
Document Number: 70657
S-31726—Rev. D, 18-Aug-03
www.vishay.com
3
Si4806DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (V
G1
= V
G2
, 25_C UNLESS NOTED)
40
Source-Drain Diode Forward Voltage
0.10
On-Resistance vs. Gate-to-Source Voltage
10
T
J
= 150_C
r
DS(on)
- On-Resistance (
W
)
0.08
I
S
- Source Current (A)
0.06
0.04
I
D
= 7.7 A
0.02
T
J
= 25_C
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
- Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
10
V
GS
- Gate-to-Source Voltage (V)
0.6
0.4
0.2
V
GS(th)
Variance (V)
- 0.0
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
- 50
Threshold Voltage
60
50
Single Pulse Power
I
D
= 250
mA
40
Power (W)
30
20
10
0
0
50
T
J
- Temperature (_C)
2
1
100
150
0.01
0.1
1
Time (sec)
10
30
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10
-4
10
-3
10
-2
10
-1
Square Wave Pulse Duration (sec)
t
2
1. Duty Cycle, D =
t
1
t
1
t
2
Notes:
P
DM
2. Per Unit Base = R
thJA
= 55_C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
1
10
30
www.vishay.com
4
Document Number: 70657
S-31726—Rev. D, 18-Aug-03
Si4806DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (V
G1
= 0 V, 25_C UNLESS NOTED)
Output Characteristics
V
GS
= 10 thru 6 V
6
5
4
3
2
1
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
2, 1 V
3V
0.0
0
1
2
3
4
5
I
D
- Drain Current (A)
4V
5V
r
DS(on)
- On-Resistance (
W
)
0.6
7
0.8
On-Resistance vs. Drain Current
I
D
- Drain Current (A)
0.4
V
GS
= 4.5 V
V
GS
= 10 V
0.2
10
Gate Charge
2.0
On-Resistance vs. Gate-to-Source Voltage
V
GS
- Gate-to-Source Voltage (V)
V
DS
= 15 V
I
D
= 0.4 A
6
r
DS(on)
- On-Resistance (
W
)
8
1.6
1.2
I
D
= 400 mA
0.8
4
2
0.4
0
0.0
0.0
0.4
0.8
1.2
1.6
2.0
0
2
4
6
8
10
Q
g
- Total Gate Charge (nC)
V
GS
- Gate-to-Source Voltage (V)
Document Number: 70657
S-31726—Rev. D, 18-Aug-03
www.vishay.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
