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24C02C-I/SNG

产品描述eeprom 256x8 lead free package
产品类别存储    存储   
文件大小220KB,共16页
制造商Microchip(微芯科技)
官网地址https://www.microchip.com
标准
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24C02C-I/SNG概述

eeprom 256x8 lead free package

24C02C-I/SNG规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码SOIC
包装说明3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8
针数8
Reach Compliance Codecompli
ECCN代码EAR99
最大时钟频率 (fCLK)0.4 MHz
数据保留时间-最小值200
耐久性1000000 Write/Erase Cycles
I2C控制字节1010DDDR
JESD-30 代码R-PDSO-G8
JESD-609代码e3
长度4.9 mm
内存密度2048 bi
内存集成电路类型EEPROM
内存宽度8
湿度敏感等级1
功能数量1
端子数量8
字数256 words
字数代码256
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织256X8
封装主体材料PLASTIC/EPOXY
封装代码SOP
封装等效代码SOP8,.25
封装形状RECTANGULAR
封装形式SMALL OUTLINE
并行/串行SERIAL
峰值回流温度(摄氏度)260
电源5 V
认证状态Not Qualified
座面最大高度1.75 mm
串行总线类型I2C
最大待机电流0.00005 A
最大压摆率0.003 mA
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Matte Tin (Sn)
端子形式GULL WING
端子节距1.27 mm
端子位置DUAL
处于峰值回流温度下的最长时间40
宽度3.9 mm
最长写入周期时间 (tWC)1 ms
写保护HARDWARE
Base Number Matches1

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24C02C
2K 5.0V I
2
C
Serial EEPROM
Features
• Single supply with operation from 4.5 to 5.5V
• Low-power CMOS technology
- 1 mA active current typical
- 10
µA
standby current typical at 5.5V
• Organized as a single block of 256 bytes (256 x 8)
• Hardware write protection for upper half of array
• 2-wire serial interface bus, I
2
C compatible
• 100 kHz and 400 kHz compatibility
• Page write buffer for up to 16 bytes
• Self-timed write cycle (including auto-erase)
• Fast 1 mS write cycle time for Byte or Page mode
• Address lines allow up to eight devices on bus
• 1,000,000 erase/write cycles
• ESD protection > 4,000V
• Data retention > 200 years
• 8-pin PDIP, SOIC or TSSOP packages
• Available for extended temperature ranges
- Commercial (C):
0°C
to +70°C
- Industrial (I):
-40°C to +85°C
- Automotive (E):
-40°C to +125°C
Package Types
PDIP/SOIC
A0
A1
A2
Vss
1
8
Vcc
WP
SCL
SDA
24C02C
2
3
4
7
6
5
TSSOP
A0
A1
A2
V
SS
1
2
3
4
8
7
6
5
V
CC
WP
SCL
SDA
24C02C
Block Diagram
A0 A1 A2
WP
HV Generator
Description
The Microchip Technology Inc. 24C02C is a 2K bit
Serial Electrically Erasable PROM with a voltage range
of 4.5V to 5.5V. The device is organized as a single
block of 256 x 8-bit memory with a 2-wire serial
interface. Low current design permits operation with
typical standby and active currents of only 10
µA
and 1
mA respectively. The device has a page write capability
for up to 16 bytes of data and has fast write cycle times
of only 1 mS for both byte and page writes. Functional
address lines allow the connection of up to eight
24C02C devices on the same bus for up to 16K bits of
contiguous EEPROM memory. The device is available
in the standard 8-pin PDIP, 8-pin SOIC (150 mil) and
TSSOP packages.
I/O
Control
Logic
Memory
Control
Logic
XDEC
EEPROM
Array
SDA SCL
Vcc
Vss
Write-Protect
Circuitry
YDEC
Sense Amp.
R/W Control
I
2
C is a trademark of Philips Corporation.
2003 Microchip Technology Inc.
DS21202D-page 1

 
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