VN3205
N-Channel Enhancement-Mode
Vertical DMOS FETs
Features
►
►
►
►
►
►
►
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
General Description
This enhancement-mode (normally-off) transistor utilizes a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device with
the power handling capabilities of bipolar transistors and with
the high input impedance and positive temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
this device is free from thermal runaway and thermally induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
►
►
►
►
►
►
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
Ordering Information
Device
VN3205
Package Options
TO-92
VN3205N3-G
14-Lead
PDIP
VN3205P-G
TO-243AA
(SOT-89)
VN3205N8-G
Die*
VN3205ND
BV
DSS
/BV
DGS
(V)
R
DS(ON)
max
(Ω)
V
GS(th)
max
(V)
50
0.3
2.4
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
Pin Configurations
DRAIN
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55°C to +150°C
+300°C
SOURCE
GATE
GATE
SOURCE
DRAIN
TO-92 (N3)
G3
TO-243AA (SOT-89) (N8)
D3
N/C
G4
S4
S3
D4
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
D1
D2
S2
G2
G1
S1
N/C
14-Lead PDIP (P)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
VN3205
Product Markings
Si VN
320 5
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Top Marking
V N32 0 5 P
YYWW
LLLLLLLLLL
Package may or may not include the following marks: Si or
Bottom Marking
CCCCCCCCCCC
AAA
TO-92 (N3)
VN2LW
W = Code for week sealed
Package may or may not include the following marks: Si or
YY = Year Sealed
WW = Week Sealed
L = Lot Number
C = Country of Origin*
A = Assembler ID*
= “Green” Packaging
*May be part of top marking
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-243AA (SOT-89) (N8)
14-Lead PDIP (P)
Thermal Characteristics
Package
TO-92
14-Lead PDIP
TO-243AA
(continuous)
(A)
I
D
*
(pulsed)
(A)
I
D
Power Dissipation
@T
C
= 25 C
(W)
O
(
O
C/W)
θ
jc
(
O
C/W)
θ
ja
I
DR
†
(A)
I
DRM
(A)
1.2
1.5
1.5
8.0
8.0
8.0
1.0
3.0
†
1.6
(T
A
= 25
O
)
125
41.6
†
15
170
83.3
†
78
‡
1.2
1.5
1.5
8.0
8.0
8.0
Notes:
* I
D
(continuous) is limited by max rated T
J
, T
A
= 25
O
C.
† Total for package.
‡ Mounted on FR5 board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T = 25 C unless otherwise specified)
A
O
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
Parameter
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage current
Min
50
0.8
-
-
-
Typ
-
-
-4.3
1.0
-
-
14
-
-
-
-
0.85
1.5
Max
-
2.4
-5.5
100
10
1.0
-
0.45
0.45
0.3
0.3
1.2
-
Units
V
V
mV/
O
C
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= 10mA
V
GS
= V
DS
, I
D
= 10mA
V
GS
= V
DS
, I
D
= 10mA
V
GS
= ±20V, V
DS
= 0V
V
GS
= 0V,
V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 10V, V
DS
= 5.0V
V
GS
= 4.5V, I
D
= 1.5A
V
GS
= 4.5V, I
D
= 0.75A
V
GS
= 10V, I
D
= 3.0A
V
GS
= 10V, I
D
= 1.5A
V
GS
= 10V, I
D
= 3.0A
V
DS
= 25V, I
D
= 2.0A
I
DSS
Zero gate voltage drain current
-
I
D(ON)
On-state drain current
TO-92 and PDIP
TO-243AA
TO-92 and PDIP
TO-243AA
3.0
-
-
-
-
-
1.0
R
DS(ON)
Static drain-to-source
on-state resistance
Ω
ΔR
DS(ON)
G
FS
Change in R
DS(ON)
with temperature
Forward transconductance
%/
O
C
mho
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
VN3205
Electrical Characteristics
(cont.) (T = 25°C unless otherwise specified)
A
Sym
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Min
-
-
-
-
-
-
-
-
-
Typ
220
70
20
-
-
-
-
-
300
Max
300
120
30
10
15
25
25
1.6
-
Units
pF
Conditions
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
ns
V
DD
= 25V,
I
D
= 2.0A,
R
GEN
= 10Ω
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1.0A
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
GEN
90%
10%
t
(ON)
INPUT
0V
R
L
OUTPUT
t
(OFF)
t
r
t
d(OFF)
t
f
t
d(ON)
V
DD
OUTPUT
0V
10%
90%
10%
90%
INPUT
D.U.T.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
VN3205
Typical Performance Curves
20
Output Characteristics
V
GS
Saturation Characteristics
20
16
10V
16
V
GS
10V
8V
I
D
(amperes)
12
I
D
(amperes)
8V
12
8
6V
8
6V
4
4V
3V
4
4V
3V
0
2
0
0
10
20
V
DS
(volts)
30
40
50
0
V
DS
(volts)
4
6
8
10
5
Transconductance vs. Drain Current
3.2
2.8
2.4
Power Dissipation vs. Case Temperature
P-DIP
4
V
DS
= 25V
G
FS
(seimens)
T
A
= -55°C
2
P
D
(watts)
3
2.0
1.6
1.2
0.8
0.4
TO-243AA
(
T
A
= 25° C)
25°C
125°C
TO-92
1
0
0
2
I
D
(amperes)
4
6
8
10
0
0
25
50
75
100
125
150
T
C
(
O
C)
1.0
Maximum Rated Safe Operating Area
10
TO-92 (pulsed)
P-DIP (pulsed)
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-243AA
(pulsed)
0.8
I
D
(amperes)
1.0
TO-92 (DC)
P-DIP (DC)
TO-243AA (DC)
0.6
TO-243AA
T
A
= 25°C
P
D
= 1.6W
0.1
0.4
T
C
= 25°C
.01
0
1
0.2
V
DS
(volts)
10
100
0
0.001
T
C
= 25°C
0.01
0.1
1.0
10
TO-92
P
D
= 1W
t
p
(seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
VN3205
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.1
1.0
On-Resistance vs. Drain Current
0.8
V
GS
= 4.5V
BV
DSS
(normalized)
R
DSS(ON)
(ohms)
0.6
V
GS
= 10V
1.0
0.4
0.2
0.9
-50
0
50
100
150
0
0
4
T
J
( C)
O
I
D
(amperes)
8
12
16
20
10
Transfer Characteristics
V
DS
= 25V
V
(th)
and R
DS
Variation with Temperature
1.2
1.6
8
6
V
GS(th)
(normalized)
I
D
(amperes)
25°C
125°C
1.0
1.2
4
0.9
1.0
2
0.8
V
GS(th)
@ 1mA
0.8
0
0
2
4
V
GS (volts)
6
8
10
0.7
-50
0
50
100
0.6
150
T
J
(
O
C)
10
Capacitance vs. Drain-to-Source Voltage
400
Gate Drive Dynamic Characteristics
f = 1MHz
300
8
V
DS
= 10V
C (picofarads)
V
GS
(volts)
C
ISS
200
6
V
DS
= 40V
325 pF
4
100
C
OSS
2
C
RSS
0
0
10
20
30
40
0
215 pF
0
1
V
DS
(volts)
Q
G
(nanocoulombs)
2
3
4
5
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
R
DS(ON)
(normalized)
T
A
= -55°C
1.1
R
DS(ON)
@ 10V, 3A
1.4
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