TN2106
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
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►
►
►
►
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Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
►
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Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo-voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN2106
Package Option
TO-236AB (SOT-23)
TN2106K1-G
TO-92
TN2106N3-G
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
V
GS(th)
(max)
(V)
60
2.5
2.0
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
SOURCE
SOURCE
DRAIN
GATE
Absolute Maximum Ratings
Parameter
Drain-to-source
Drain-to-gate
Gate-to-source
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
GATE
TO-236AB (SOT-23) (K1)
TO-92 (N3)
Product Marking
N1LW
W = Code for week sealed
= “Green” Packaging
TO-236AB (SOT-23) (K1)
TN
2 1 0 6
YYWW
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
TO-92 (N3)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
TN2106
Thermal Characteristics
Package
TO-236AB (SOT-23)
TO-92
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
A
= 25 C
(W)
O
(
O
C/W)
θ
jc
(
O
C/W)
θ
ja
(mA)
I
DR
†
I
DRM
(A)
280
300
0.8
1.0
0.36
0.74
200
125
350
170
280
300
0.8
1.0
Notes:
† I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
Gate threshold voltage
A
= 25
O
C unless otherwise specified)
Min
60
0.6
-
-
-
-
0.6
-
-
-
150
-
-
-
-
-
-
-
-
-
Typ
-
-
-3.8
0.1
-
-
-
-
-
0.70
400
35
17
7.0
3.0
5.0
6.0
5.0
1.2
400
Max
-
2.0
-5.5
100
1.0
100
-
5.0
2.5
1.0
-
50
25
8.0
5.0
8.0
9.0
8.0
1.8
-
Units
V
V
nA
µA
A
Ω
%/
O
C
Conditions
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8Max Rating,
V
GS
= 0V, T
A
= 125
O
C
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 0.5A,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 500mA
V
GS
= 0V, I
SD
= 500mA
Drain-to-source breakdown voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
On-state drain current
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
mmho V
DS
= 25V, I
D
= 500mA
pF
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
F
10%
t
d(ON)
V
DD
R
GEN
10%
90%
D.U.T.
INPUT
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
TN2106
Typical Performance Curves
2.5
Output Characteristics
V
GS
=
2.5
Saturation Characteristics
V
GS
=
10V
2.0
2.0
10V
I
D
(amperes)
1.0
I
D
(amperes)
1.5
8V
1.5
8V
6V
1.0
6V
0.5
4V
3V
0
10
0.5
4V
0
0
3V
0
2
4
6
8
10
V
DS
(volts)
20
30
40
50
V
DS
(volts)
Power Dissipation vs. Temperature
0.5
Transconductance vs. Drain Current
1.0
0.4
V
DS
= 25V
0.8
TO-92
G
FS
(siemens)
25
O
C
0.2
P
D
(watts)
0.3
T
A
= -55
O
C
0.6
125 C
O
0.4
SOT-23
0.1
0.2
0
0
0.2
0.4
0.6
0.8
1.0
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
1.0
1.0
SOT-23 (pulsed)
T
A
( C)
O
Thermal Response Characteristics
Thermal Resistance (normalized
)
0.8
TO-236AB
TA = 25
O
C
PD = 0.36W
TO-92
TC = 25
O
C
PD = 1W
SOT-23 (DC)
I
D
(amperes)
0.1
0.6
0.01
0.4
T
A
= 25
O
C
0.2
0.001
0.1
1
10
100
0
0.001
0.01
0.1
1.0
10
V
DS
(volts)
t
p
(seconds)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
TN2106
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
10
1.1
8
On-Resistance vs. Drain Current
V
GS
= 4.5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
6
V
GS
= 10V
1.0
4
2
0.9
0
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
2.5
Tj ( C)
O
ID (amperes)
V
GS(th)
and R
DS(ON)
Variation with Temperature
1.2
1.0
Transfer Characteristics
V
DS
= 25V
2.0
0.8
R
DS(ON)
@ 10V, 0.5A
1.0
0.6
1.2
0.8
0.4
25 C
O
0.8
0.6
0.2
125
O
C
V
GS(th)
@ 1mA
0.4
0.4
0
0
2
4
6
8
10
-50
0
50
100
150
0
V
GS
(volts)
100
Tj (
O
C)
10
Capacitance vs. Drain-to-Source Voltage
f = 1MHz
Gate Drive Dynamic Characteristics
8
75
V
DS
= 10V
C (picofarads)
50
V
GS
(volts)
6
C
ISS
25
4
V
DS
= 20V
92 pF
2
C
RSS
0
0
10
20
C
OSS
38 pF
0
30
40
0
0.2
0.4
0.6
0.8
1.0
V
DS
(volts)
Q
G
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
T
A
= -55
O
C
1.6
ID (amperes)
TN2106
3-Lead TO-236AB (SOT-23) Package Outline (K1/T)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
Top View
View B
View B
Side View
View A - A
Symbol
Dimension
(mm)
MIN
NOM
MAX
A
0.89
-
1.12
A1
0.01
-
0.10
A2
0.88
0.95
1.02
b
0.30
-
0.50
D
2.80
2.90
3.04
E
2.10
-
2.64
E1
1.20
1.30
1.40
e
0.95
BSC
e1
1.90
BSC
L
0.20
†
0.50
0.60
L1
0.54
REF
θ
0
O
-
8
O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension is a non-JEDEC dimension.
Drawings not to scale.
Supertex Doc.#:
DSPD-3TO236ABK1, Version B072208.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
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