PD -91623A
APPROVED
l
l
l
l
l
IRF3315
D
HEXFET
®
Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
V
DSS
= 150V
G
S
R
DS(on)
= 0.07Ω
I
D
= 27A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
TO-220AB
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
27
19
108
136
0.91
± 20
350
12
13.6
2.5
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.1
–––
62
Units
°C/W
www.irf.com
1
12/09/98
IRF3315
APPROVED
Typ.
–––
0.187
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
9.6
32
49
38
4.5
7.5
1300
300
160
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.07
Ω
V
GS
= 10V, I
D
= 12A
4.0
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 50V, I
D
= 12A
25
V
DS
= 150V, V
GS
= 0V
µA
250
V
DS
= 120V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
95
I
D
= 12A
11
nC V
DS
= 120V
47
V
GS
= 10V, See Fig. 6 and 13
–––
V
DD
= 75V
–––
I
D
= 12A
ns
–––
R
G
= 5.1Ω
–––
R
D
= 5.9Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
pF V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
V
(BR)DSS
Drain-to-Source Breakdown Voltage
150
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
–––
R
DS(on)
Static Drain-to-Source On-Resistance –––
V
GS(th)
Gate Threshold Voltage
2.0
g
fs
Forward Transconductance
11.4
–––
I
DSS
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
I
GSS
Gate-to-Source Reverse Leakage
–––
Q
g
Total Gate Charge
–––
Q
gs
Gate-to-Source Charge
–––
Q
gd
Gate-to-Drain ("Miller") Charge
–––
t
d(on)
Turn-On Delay Time
–––
t
r
Rise Time
–––
t
d(off)
Turn-Off Delay Time
–––
t
f
Fall Time
–––
L
D
L
S
C
iss
C
oss
C
rss
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
27
––– –––
showing the
A
G
integral reverse
––– ––– 108
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
––– 174 260
ns
T
J
= 25°C, I
F
= 12A
––– 1.2 1.7
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
12A, di/dt
≤
140A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Starting T
J
= 25°C, L = 4.9mH
R
G
= 25
Ω,
I
AS
= 12A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
2
www.irf.com
APPROVED
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
IRF3315
1000
I
D
, Drain-to-Source Current (A)
INPUT NEW DATA
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
INPUT NEW DATA
100
100
10
4.5V
10
4.5V
1
0.1
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
20µs PULSE WIDTH
T
J
= 175
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
I
D
, Drain-to-Source Current (A)
INPUT NEW DATA
T
J
= 25
°
C
100
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 27A
2.5
INPUT NEW DATA
2.0
T
J
= 175
°
C
1.5
10
1.0
0.5
1
4.0
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
0.0
-60 -40 -20
V
GS
= 10V
0
20 40 60 80 100 120 140 160 180
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.irf.com
3
IRF3315
3000
APPROVED
20
2500
V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
I
D
= 12
A
16
V
DS
= 120V
V
DS
= 75V
V
DS
= 30V
C, Capacitance (pF)
2000
C
iss
12
1500
C
oss
1000
8
C
rss
500
4
0
1
10
100
0
0
20
40
FOR TEST CIRCUIT
SEE FIGURE 13
60
80
100
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
I
SD
, Reverse Drain Current (A)
10
T
J
= 175
°
C
I
D
, Drain Current (A)
INPUT NEW DATA
10us
100
INPUT NEW DATA
100us
10
1ms
1
T
J
= 25
°
C
V
GS
= 0 V
0.6
0.9
1.2
1.5
0.1
0.3
1
1
T
C
= 25 ° C
T
J
= 175 ° C
Single Pulse
10
100
10ms
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
www.irf.com
APPROVED
30
IRF3315
V
DS
R
D
25
V
GS
R
G
D.U.T.
+
I
D
, Drain Current (A)
20
-
V
DD
10V
15
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
INPUT NEW DATA
10
Fig 10a.
Switching Time Test Circuit
V
DS
90%
5
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Thermal Response (Z
thJC
)
INPUT NEW DATA
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
FPGA/CPLD
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
