DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D302
BC807DS
PNP general purpose double
transistor
Product data sheet
Supersedes data of 2002 Aug 09
2002 Nov 22
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
FEATURES
•
High current (500 mA)
•
600 mW total power dissipation
•
Replaces two SOT23 packaged transistors on same
PCB area.
APPLICATIONS
•
General purpose switching and amplification
•
Push-pull amplifiers
•
Multi-phase stepper motor drivers.
DESCRIPTION
PNP transistor pair in a SOT457 (SC-74) plastic package.
6
5
4
6
BC807DS
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
PINNING
PIN
1, 4
2, 5
6, 3
emitter
base
collector
DESCRIPTION
TR1; TR2
TR1; TR2
TR1; TR2
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
MAX.
−45
−500
−1
UNIT
V
mA
A
5
4
MARKING
TYPE NUMBER
BC807DS
MARKING CODE
N2
1
2
3
MAM457
TR2
TR1
1
2
3
Top view
Fig.1
Simplified outline (SOT457) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
T
amb
≤
25
°C;
note 1
−
MAX.
−50
−45
−5
−500
−1
−200
370
+150
150
+150
UNIT
Per transistor unless otherwise specified
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
Note
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
2002 Nov 22
2
total power dissipation
600
mW
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
V
V
V
mA
A
mA
mW
°C
°C
°C
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
PARAMETER
thermal resistance from junction to note 1
ambient
CONDITIONS
BC807DS
VALUE
208
UNIT
K/W
1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm
2
.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per transistor
I
CBO
I
EBO
h
FE
V
CEsat
V
BE
C
c
f
T
Notes
1. Pulse test: t
p
≤
300
μs; δ ≤
0.02.
2. V
BE
decreases by approximately
−2
mV/K with increasing temperature.
collector-base cut-off current
emitter-base cut-off current
DC current gain
V
CB
=
−20
V; I
E
= 0
V
CB
=
−20
V; I
E
= 0; T
j
= 150
°C
V
EB
=
−5
V; I
C
= 0
V
CE
=
−1
V; I
C
=
−100
mA; note 1
V
CE
=
−1
V; I
C
=
−500
mA; note 1
collector-emitter saturation voltage I
C
=
−500
mA; I
B
=
−50
mA; note 1
base-emitter voltage
collector capacitance
transition frequency
V
CE
=
−1
V; I
C
=
−500
mA;
notes 1 and 2
V
CB
=
−10
V; I
E
= I
e
= 0; f = 1 MHz
V
CE
=
−5
V; I
C
=
−10
mA;
f = 100 MHz
−
−
−
160
40
−
−
−
80
−
−
−
−
−
−
−
9
−
−100
−5
−100
400
−
−700
−1.2
−
−
mV
V
pF
MHz
nA
μA
nA
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
2002 Nov 22
3
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
BC807DS
handbook, halfpage
600
MHC324
hFE
500
(1)
−1000
handbook, halfpage
IC
(mA)
−800
MHC325
(1)
(2)
(3)
(4)
(5)
400
−600
(6)
(7)
(8)
300
(2)
−400
200
(3)
(9)
100
−200
(10)
0
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
0
0
−2
−4
−6
−8
−10
VCE (V)
(9) I
B
=
−1.4
mA.
(10) I
B
=
−0.7
mA.
V
CE
= 1 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
(1) I
B
=
−7
mA.
(2) I
B
=
−6.3
mA.
(3) I
B
=
−5.6
mA.
(4) I
B
=
−4.9
mA.
(5) I
B
=
−4.2
mA.
(6) I
B
=
−3.5
mA.
(7) I
B
=
−2.8
mA.
(8) I
B
=
−2.1
mA.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Collector current as a function of
collector-emitter voltage; typical values.
−10
3
handbook, halfpage
VCEsat
(mV)
−10
2
(1)
(2)
MHC326
handbook, halfpage
−1200
VBE
(mV)
−1000
MHC327
−800
(1)
−10
(3)
−600
(2)
−400
(3)
−1
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−200
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
I
C
/I
B
= 10.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
= 1 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
2002 Nov 22
4
NXP Semiconductors
Product data sheet
PNP general purpose double transistor
PACKAGE OUTLINE
BC807DS
Plastic surface mounted package; 6 leads
SOT457
D
B
E
A
X
y
HE
v
M
A
6
5
4
Q
pin 1
index
A
A1
c
1
2
3
Lp
e
bp
w
M
B
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A1
0.1
0.013
bp
0.40
0.25
c
0.26
0.10
D
3.1
2.7
E
1.7
1.3
e
0.95
HE
3.0
2.5
Lp
0.6
0.2
Q
0.33
0.23
v
0.2
w
0.2
y
0.1
OUTLINE
VERSION
SOT457
REFERENCES
IEC
JEDEC
EIAJ
SC-74
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
2002 Nov 22
5
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