The SiP12510/11 are a 1.25 MHz current-mode boost con-
verter with a feedback reference voltage of 0.1 V which offers
small size and high power conversion efficiency. Its input volt-
age range is from 2.5 V to 6 V, and output voltage can go up
to 27.5 V for SiP12511 and 17 V for SiP12510. The internal
frequency compensation minimizes number of external com-
ponents. The integrated 33 V power switch can carry up to
0.55 A. The integrated power switch also features the over
current limiting to protect itself. The internal soft-start circuit
controls the rate of rise of the output voltage during start-up
to prevent overshoot. The logic-level shutdown pin can be
used to reduce quiescent current to < 1 µA and, effectively,
extend battery life. Thermal shutdown at 165 °C is also
included. The low FB voltage of 0.1 V improves the overall
circuit efficiency. These features and more, make the
SiP12510/11 an ideal power solution to white LED, OLED,
LCD, and CCD applications operating from a single or dual
cell lithium-ion battery.
SiP12510/11 are available in 6-pin TSOT23-6 package and
are specified to operate over the industrial temperature range
of - 40 °C to 85 °C.
•
TYPICAL APPLICATION CIRCUIT
MBR0540
V
IN
C
IN
1 µF
6
V
IN
4
SHD
LX
1
L
10 µH
C
OUT
1 µF
V
OUT
SHD
SiP12511
5
V
OUT
GND
2
FB
3
0.1 V
R
FB
= 5
Ω
Figure 1. SiP12511 Typical Application Circuit
MBR0530
V
IN
C
IN
1 µF
4
SHD
6
V
IN
LX
1
L
V
OUT
10 µH
C
OUT
1 µF
SHD
SiP12510
5
V
OUT
GND
2
0.1 V
R
FB
= 5
Ω
FB
3
Figure 2. SiP12510 Typical Application Circuit
Document Number: 74498
S-70770–Rev. A, 30-Apr-07
www.vishay.com
1
SiP12510/11
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Input Voltage, V
IN
to GND
V
OUT
, LX Voltage
SHD Voltage
FB Voltage
ESD (Human Body Model)
a
Maximum Junction Temperature
Storage Temperature
Power Dissipation (T
A
= 70 °C)
b
Junction to Ambient Thermal Impedance (R
θJ
)
c
Maximum Operating Junction Temperature
Limit
- 0.3 to 12
- 0.3 to 33
- 0.3 to 12
- 0.3 to 12
2
150
- 55 to + 150
367
150
125
kV
°C
mW
°C/W
°C
V
Unit
Notes:
a. The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin.
b. Derate 6.67 mW/°C above 70 °C.
c. Device mounted with all leads soldered or welded to PC board.
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating/conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
Parameter
Input Voltage, V
IN
to GND
SHD
V
OUT
LX
Operating Temperature Range
SiP12511
V
IN
to 27.5
0 to 28
- 40 to 85
Limit
2.5 to 6
0 to V
IN
SiP12510
V
IN
to 17
V
°C
Unit
V
SPECIFICATIONS
Parameter
Input Voltage
Switch Current Limit
Switch On Resistance
SHD Input High Level
SHD Input Low Level
Feedback Voltage
Feedback Bias Current
Feedback Voltage Line Regulation
Symbol
V
IN
I
LIMIT
R
DS (on)
V
SHDH
V
SHDL
V
FB
I
FB
ΔV
FB
/
(V
FB
x
ΔV
IN
)
I
Q
F
SW
D
MAX
I
LEAK
T
SHD
Not Switching, V
LX
= 5 V
5
≥
V
IN
≥
2.5 V
and V
OUT
= 15 V at 20 mA
V
FB
= 0 V (Switching)
Quiescent Current
Switching Frequency
Maximum Duty Cycle
Switch Leakage
Thermal Shutdown
V
FB
= 1.5 V (Not Switching)
V
SHD
= 0 V
Full
Full
Full
Full
Full
Room
Full
165
1.05
85
1.25
90
1
10
I
SW
= 100 mA
Test Conditions Unless Specified
V
IN
= 5 V, V
SHD
= 2 V, T
A
= 25 °C
Temp
Full
Full
Full
Full
Full
Full
0.092
0.100
60
0.2
1.3
0.3
2
0.5
1
1.45
1.5
0.4
0.108
nA
%/V
mA
µA
MHz
%
µA
°C
V
Min
a
2.5
0.385
0.55
0.75
Typ
b
Max
a
6
0.735
1.25
Unit
V
A
Ω
www.vishay.com
2
Document Number: 74498
S-70770–Rev. A, 30-Apr-07
SiP12510/11
Vishay Siliconix
SPECIFICATIONS
Thermal Shutdown Hysteresis
Under Voltage Lockout
UVLO Hysteresis
Over Voltage Protection
OVLO Hysteresis
T
HYST
V
UVLO
V
UVLOHYST
V
OVLO
V
OVLOHYST
SiP12510
SiP12511
Full
Full
17
27.5
Full
2.00
20
2.24
0.1
19
30
0.2
21
32
V
2.48
°C
Notes:
a. Limits are guaranteed by testing.
b. Typical values are derived from the mean value of a large quantity of samples tested during characterization and represent the most likely
expected value of the parameter.
PIN CONFIGURATION
TSOT23-6 Package
LX
GND
FB
1
2
3
TOP VIEW
Figure 3.
6
5
4
V
IN
V
OUT
SHD
PIN DESCRIPTION
Pin Number
1
2
3
4
5
6
Name
LX
V
IN
SHD
FB
V
OUT
GND
Function
Drain Pin of the Internal Switch. Connect inductor/diode to LX. Minimize trace area at this pin to keep
electromagnetic interference down to a minimum.
Analog and power input of the controller IC. A bypass capacitor is required on this pin.
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