CZT5551
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CZT5551 type
is an NPN silicon transistor manufactured by the
epitaxial planar process, epoxy molded in a surface
mount package, designed for high voltage amplifier
applications.
MARKING: FULL PART NUMBER
SOT-223 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
Θ
JA
180
160
6.0
600
2.0
-65 to +150
62.5
UNITS
V
V
V
mA
W
°C
°C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
ICBO
IEBO
BVCBO
BVCEO
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VCB=120V
VCB=120V, TA=100°C
VEB=4.0V
IC=100μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA,
IC=50mA,
IB=1.0mA
IB=5.0mA
180
160
6.0
MAX
50
50
50
UNITS
nA
μA
nA
V
V
V
0.15
0.20
1.00
1.00
V
V
V
V
R4 (1-March 2010)
CZT5551
SURFACE MOUNT
NPN SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
hFE
hFE
hFE
fT
Cob
Cib
hfe
NF
VCE=5.0V, IC=1.0mA
VCE=5.0V, IC=10mA
VCE=5.0V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=200μA, RS=10Ω,
f=10Hz to 15.7kHz
50
80
80
30
100
300
6.0
20
200
8.0
250
UNITS
MHz
pF
pF
dB
SOT-223 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Collector
3) Emitter
4) Collector
MARKING:
FULL PART NUMBER
R4 (1-March 2010)
w w w. c e n t r a l s e m i . c o m
Microchip MCU
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