TN2510
N-Channel Enhancement-Mode
Vertical DMOS FET
Features
►
►
►
►
►
►
►
►
Low threshold (2.0V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
General Description
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input
impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this
device is free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Applications
►
►
►
►
►
►
►
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Device
TN2510
Package Options
TO-243AA (SOT-89)
TN2510N8-G
Die*
TN2510ND
BV
DSS
/BV
DGS
(V)
R
DS(ON)
(max)
(Ω)
I
D(ON)
(min)
(A)
V
GS(th)
(max)
(V)
100
1.5
3.0
2.0
-G indicates package is RoHS compliant (‘Green’).
* MIL visual screening available.
Pin Configuration
DRAIN
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Value
BV
DSS
BV
DGS
±20V
-55
O
C to +150
O
C
300
O
C
GATE
SOURCE
DRAIN
TO-243AA (SOT-89) (N8)
Product Marking
TN5AW
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
W = Code for week sealed
= “Green” Packaging
TO-243AA (SOT-89) (N8)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
TN2510
Thermal Characteristics
Package
TO-243AA (SOT-89)
(continuous)
(mA)
I
D
†
(pulsed)
(A)
I
D
Power Dissipation
@T
A
= 25
O
C
(W)
O
( C/W)
θ
jc
( C/W)
O
θ
ja
(mA)
I
DR
†
I
DRM
(A)
730
5.0
1.6
‡
15
78
‡
730
5.0
Notes:
† I
D
(continuous) is limited by max rated T
j
.
‡ Mounted on FR5 Board, 25mm x 25mm x 1.57mm.
Electrical Characteristics
(T
Sym
BV
DSS
V
GS(th)
ΔV
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
ΔR
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
Parameter
A
= 25
O
C unless otherwise specified)
Min
100
0.6
-
-
-
-
1.2
3.0
-
-
-
-
400
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
2.0
6.0
-
1.5
1.0
-
800
70
30
15
-
-
-
-
-
300
Max
-
2.0
-4.5
100
10
1.0
-
-
15
2.0
1.5
0.75
-
125
70
25
10
10
20
10
1.8
-
Units
V
V
nA
µA
mA
A
Conditions
V
GS
= 0V, I
D
= 2.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= ± 20V, V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
DS
= 0.8 Max Rating,
V
GS
= 0V, T
A
= 125°C
V
GS
= 5.0V, V
DS
= 25V
V
GS
= 10V, V
DS
= 25V
V
GS
= 3.0V, I
D
= 250mA
V
GS
= 4.5V, I
D
= 750mA
V
GS
= 10V, I
D
= 750mA
V
GS
= 10V, I
D
= 750mA
V
GS
= 0V,
V
DS
= 25V,
f = 1.0MHz
V
DD
= 25V,
I
D
= 1.5A,
R
GEN
= 25Ω
V
GS
= 0V, I
SD
= 1.5A
V
GS
= 0V, I
SD
= 1.5A
Drain-to-source breakdown voltage
Gate threshold voltage
Change in V
GS(th)
with temperature
Gate body leakage
Zero gate voltage drain current
On-state drain current
mV/
O
C V
GS
= V
DS
, I
D
= 1.0mA
Static drain-to-source on-state resistance
Change in R
DS(ON)
with temperature
Forward transductance
Input capacitance
Common source output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage drop
Reverse recovery time
Ω
%/
O
C
mmho V
DS
= 25V, I
D
= 1.0A
pF
ns
V
ns
Notes:
1. All D.C. parameters 100% tested at 25
O
C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
V
DD
PULSE
GENERATOR
R
L
OUTPUT
90%
10%
t
(ON)
INPUT
0V
t
(OFF)
t
r
t
d(OFF)
t
F
t
d(ON)
V
DD
R
GEN
10%
90%
10%
INPUT
D.U.T.
OUTPUT
0V
90%
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
TN2510
Typical Performance Curves
°
°
°
°
°
°
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
TN2510
Typical Performance Curves
(cont.)
BV
DSS
Variation with Temperature
1.1
10
On-Resistance vs. Drain Current
V
GS
= 5V
8
BV
DSS
(normalized)
R
DS(ON)
(ohms
)
6
1.0
V
GS
= 10V
4
2
0.9
0
-50
0
50
100
150
0
2
4
6
8
10
T
j
(° C)
Transfer Characteristics
10
I
D
(amperes)
V
(th)
and R
DS
Variation with Temperature
1.2
2.0
V
GS
= 25V
8
T
A
= -55°C
R
DS(ON)
@ 5V, 0.75A
1.1
I
D
(amperes)
V
(th)
@ 1mA
1.6
6
25°C
4
1.0
1.2
125°C
0.9
0.8
2
0.8
0
0
2
4
6
8
10
-50
0
50
100
150
0.4
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
T
j
(° C)
Gate Drive Dynamic Characteristics
f = 1MHz
75
C
ISS
8
V
DS
= 10V
C (picofarads)
V
GS
(volts)
6
50
V
DS
= 40V
190 pF
C
OSS
25
4
2
C
RSS
0
0
10
20
30
40
0
70pF
0
0.5
1.0
1.5
2.0
2.5
V
DS
(volts)
Q
G
(nanocoulombs)
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
R
DS(ON)
(normalized)
V
GS(th)
(normalized)
TN2510
3-Lead TO-243AA (SOT-89) Package Outline (N8)
b
b1
Symbol
Dimensions
(mm)
MIN
NOM
MAX
A
1.40
-
1.60
b
0.44
-
0.56
b1
0.36
-
0.48
C
0.35
-
0.44
D
4.40
-
4.60
D1
1.62
-
1.83
E
2.29
-
2.60
E1
2.13
-
2.29
e
1.50
BSC
e1
3.00
BSC
H
3.94
-
4.25
L
0.89
-
1.20
JEDEC Registration TO-243, Variation AA, Issue C, July 1986.
Drawings not to scale.
Supertex Doc. #:
DSPD-3TO243AAN8, Version D070908.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to
http://www.supertex.com/packaging.html.)
Supertex inc.
does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an
adequate “product liability indemnification insurance agreement.”
Supertex inc.
does not assume responsibility for use of devices described, and limits its liability to the
replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications
are subject to change without notice. For the latest product specifications refer to the
Supertex inc.
website: http//www.supertex.com.
©2008
All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TN2510
A091408
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com
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