FFM101-M
thru
FFM107-M
FAST SWITCHING SURFACE MOUNT RECTIFIER
VOLTAGE - 50 TO 1000 VOLTS
CURRENT - 1.0 AMPERES
SOD-123
0.154(3.9)
0.138(3.5)
0.012(0.3) Typ .
0.071(1.8)
0.055(1.4)
0.039(1.0)
0.024(0.6)
0.031(0.8) Typ .
0.031(0.8) Typ .
Dimensions in inches and (millimeters)
FEATURES
•
Batch process design, excellent power dissipation offers
•
•
•
•
•
•
•
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Tiny plastic SMD package.
High current capability.
Fast switching for high efficiency.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
MECHANICAL DATA
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123 / MINI SMA
•
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.027 gram
MAXIMUM RATIXGS AND ELECTRICAL CHARACTERISTICS
PARAMETER
Forward rectified current
Forward surge current
See Fig.2
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
= 25
O
C
V
R
= V
RRM
T
A
= 100
O
C
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
CONDITIONS
Symbol
I
O
I
FSM
I
R
R
èJA
C
J
T
STG
-65
42
15
+175
MIN.
TYP.
MAX.
1.0
30
5.0
100
O
UNIT
A
A
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
uA
C/W
pF
O
C
SYMBOLS
FFM101-M
FFM102-M
FFM103-M
FFM104-M
FFM105-M
FFM106-M
FFM107-M
*1
V
RRM
(V)
50
100
200
400
600
800
1000
V
RMS
*2
(V)
35
70
140
280
420
560
700
*3
V
R
(V)
50
100
200
400
600
800
1000
*4
V
F
(V)
*5
T
RR
(nS)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
150
1.30
250
500
-55 to +150
*4 Maximum forward voltage
*5 Reverse recovery time
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1
FFM101-M
thru
FFM107-M
FAST SWITCHING SURFACE MOUNT RECTIFIER
RATING AND CHARACTERISTICS CURVES FFM101-M THRU FFM107-M
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
50
INSTANTANEOUS FORWARD CURRENT,(A)
AVERAGE FORWARD CURRENT (A)
,
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
10
3.0
1.0
0
0
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
20
40
60
80
100
120
140
160
180
200
AMBIENT TEMPERATURE ( C)
0.1
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
.01
PEAK FORWAARD SURGE CURRENT,(A)
50
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLT
AGE,(V)
40
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
30
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
10
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
trr
JUNCTION CAPACITANCE,(pF)
50 / 10ns / cm
+0.5A
0
-0.25A
|
|
|
|
|
|
|
|
30
25
20
15
10
5
-1.0A
1cm
SET TIME BASE FOR
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
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