NSBA114EDXV6T1,
NSBA114EDXV6T5 SERIES
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the NSBA114EDXV6T1
series, two BRT devices are housed in the SOT−563 package which is
ideal for low−power surface mount applications where board space is
at a premium.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
R
1
(5)
(6)
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(2)
R
2
(1)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These are Pb−Free Devices
1
SOT−563
CASE 463A
PLASTIC
STYLE 1
MARKING DIAGRAM
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
−50
−50
−100
Unit
Vdc
Vdc
mAdc
xx M
G
G
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Junction and Storage Temperature
Range
Symbol
P
D
R
qJA
Max
357
2.9
350
Unit
mW
mW/°C
°C/W
xx = Device Code
(Refer to page 2)
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSBA1xxxDXV6T1
Package
Shipping
†
SOT−563* 4000/Tape & Reel
NSBA1xxxDXV6T1G SOT−563* 4000/Tape & Reel
Symbol
P
D
R
qJA
T
J
, T
stg
Max
500
4.0
250
−55 to
+150
Unit
mW
mW/°C
°C/W
°C
NSBA1xxxDXV6T5
SOT−563* 8000/Tape & Reel
NSBA1xxxDXV6T5G SOT−563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
**This
package is inherently Pb−Free.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Preferred
devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 6
Publication Order Number:
NSBA114EDXV6/D
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
DEVICE MARKING AND RESISTOR VALUES
Device*
NSBA114EDXV6T1 / T5
NSBA124EDXV6T1 / T5
NSBA144EDXV6T1 / T5
NSBA114YDXV6T1 / T5
NSBA114TDXV6T1 / T5
NSBA143TDXV6T1 / T5
NSBA113EDXV6T1 / T5
NSBA123EDXV6T1 / T5
NSBA143EDXV6T1 / T5
NSBA143ZDXV6T1 / T5
NSBA124XDXV6T1 / T5
NSBA123JDXV6T1 / T5
NSBA115EDXV6T1 / T5
NSBA144WDXV6T1
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
(Note 2)
Package
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
SOT−563
Marking
0A
0B
0C
0D
0E
0F
0G
0H
0J
0K
0L
0M
0N
0P
R1 (kW)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R2 (kW)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
100
22
*The “G’’ suffix indicates Pb−Free package available. Refer to Ordering Information Table on page 1.
2. New resistor combinations. Updated curves to follow in subsequent data sheets.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= −50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= −50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= −6.0 V, I
C
= 0)
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−50
−50
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−100
−500
−0.5
−0.2
−0.1
−0.2
−0.9
−1.9
−4.3
−2.3
−1.5
−0.18
−0.13
−0.2
−0.05
−0.13
−
−
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage (I
C
= −10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 3) (I
C
= −2.0 mA, I
B
= 0)
ON CHARACTERISTICS
(Note 3)
Collector-Emitter Saturation Voltage (I
C
= −10 mA, I
E
= −0.3 mA)
(I
C
= −10 mA, I
B
= −5 mA) NSBA113EDXV6T1/NSBA123EDXV6T1
(I
C
= −10 mA, I
B
= −1 mA)
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA143EDXV6T1/NSBA143ZDXV6T1/NSBA124XDXV6T1
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
V
CE(sat)
−
−
−0.25
Vdc
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2
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
) (continued)
Characteristic
ON CHARACTERISTICS
(Note 3) (continued)
DC Current Gain
(V
CE
= −10 V, I
C
= −5.0 mA)
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA144EDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
V
OH
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−4.9
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Vdc
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−0.2
−
Vdc
Symbol
Min
Typ
Max
Unit
Output Voltage (on)
(V
CC
= −5.0 V, V
B
= −2.5 V, R
L
= 1.0 kW)
V
OL
(V
CC
= −5.0 V, V
B
= −3.5 V, R
L
= 1.0 kW)
(V
CC
= −5.0 V, V
B
= −5.5 V, R
L
= 1.0 kW)
(V
CC
= −5.0 V, V
B
= −4.0 V, R
L
= 1.0 kW)
Output Voltage (off) (V
CC
= −5.0 V, V
B
= −0.5 V, R
L
= 1.0 kW)
(V
CC
= −5.0 V, V
B
= −0.05 V, R
L
= 1.0 kW)
NSBA113EDXV6T1
(V
CC
= −5.0 V, V
B
= − 0.25 V, R
L
= 1.0 kW)
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA123EDXV6T1
NSBA143ZDXV6T1
Input Resistor
NSBA114EDXV6T1
NSBA124EDXV6T1
NSBA144EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1
NSBA143TDXV6T1
NSBA113EDXV6T1
NSBA123EDXV6T1
NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA115EDXV6T1
NSBA144WDXV6T1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
−
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
−
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
−
1.2
0.185
0.56
0.056
2.6
k
W
Resistor Ratio
NSBA114EDXV6T1/NSBA124EDXV6T1/
NSBA144EDXV6T1/NSBA115EDXV6T1
NSBA114YDXV6T1
NSBA114TDXV6T1/NSBA143TDXV6T1
NSBA113EDXV6T1/NSBA123EDXV6T1/NSBA143EDXV6T1
NSBA143ZDXV6T1
NSBA124XDXV6T1
NSBA123JDXV6T1
NSBA144WDXV6T1
R
1
/R
2
3. Pulse Test: Pulse Width < 300
ms,
Duty Cycle < 2.0%
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NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
ALL NSBA114EDXV6T1 SERIES DEVICES
300
P
D
, POWER DISSIPATION (mW)
250
200
150
100
50
0
−50
R
qJA
= 490°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS
— NSBA114EDXV6T1
1
I
C
/I
B
= 10
T
A
= −25°C
0.1
75°C
25°C
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 1. Derating Curve − ALL DEVICES
Figure 2. V
CE(sat)
versus I
C
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA114EDXV6T1
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
T
A
= 75°C
100
25°C
−25°C
C ob , CAPACITANCE (pF)
3
2
1
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
25°C
V in , INPUT VOLTAGE (VOLTS)
T
A
= −25°C
100
V
O
= 0.2 V
IC, COLLECTOR CURRENT (mA)
10
1
10
T
A
= −25°C
25°C
75°C
0.1
1
0.01
0
1
2
V
O
= 5 V
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0.001
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
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4
NSBA114EDXV6T1, NSBA114EDXV6T5 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS — NSBA124EDXV6T1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
10
I
C
/I
B
= 10
1000
hFE , DC CURRENT GAIN (NORMALIZED)
V
CE
= 10 V
1
T
A
= −25°C
25°C
T
A
= 75°C
100
25°C
−25°C
75°C
0.1
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
10
25°C
T
A
= −25°C
C ob , CAPACITANCE (pF)
3
2
1
0.1
1
0.01
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
V
O
= 5 V
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
V
O
= 0.2 V
T
A
= −25°C
10
75°C
25°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output Current
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