HMJ1
High Dynamic Range FET Mixer
Product Information
Product Features
•
+39 dBm IIP3
•
No external matching element
Required
•
RF 750 - 1000 MHz
•
LO 680 - 980 MHz
•
IF 20 - 100 MHz
•
+17 dBm LO Drive Level
•
+3V at 23mA DC Power Supply
•
Low Cost Surface Mount J-Lead
Package
Product Description
The HMJ1 is a high dynamic range GaAs FET
mixer. This active FET mixer realizes a typical
third order intercept point of +39 dBm at an LO
drive level of +17 dBm. The HMJ1 comes in a
low cost, J-Lead package. Typical applications
include
frequency
up/down
conversion,
modulation and demodulation for transmitters
and receivers used in communications systems.
Functional Diagram
RF
LO
+3Vdc
IF
Function
IF
LO
RF
+3V
Ground
Pin No.
2
11
17
8
All other pins
Specifications
(1,2)
Parameter
RF Frequency Range
LO Frequency Range
IF Frequency Range
SSB Conversion Loss
Noise Figure
LO-RF Isolation
LO-IF Isolation
RF-IF Isolation
Input IP3
RF Return Loss
LO Return Loss
IF Return Loss
Input P1dB
LO Drive Level
DC Current at +3V Bias
Units
MHz
MHz
MHz
dB
dB
dB
dB
dB
dBm
dB
dB
dB
dBm
dBm
mA
Min
Typ
750 – 1000
680 – 980
20 – 100
7.7
9.2
29
40
24
39
8
13
19
+23
+17
23
Max
Condition
9.3
20
30
33
RF = 900 MHz @ 0 dBm
35
Notes:
1. Test conditions unless otherwise noted: 25 ºC, RF = 900 MHz @ -10 dBm, LO = 830 MHz @ +17 dBm, IF = 70 MHz.
2. Measured in a 50-Ohm system with nominal LO drive in a downconverter application only, unless otherwise specified.
Absolute Maximum Rating
Parameters
Operating Case Temperature
Storage Temperature
Maximum Input Power
Ordering Information
Part No.
HMJ1
Rating
-40 to +85
°C
-55 to +120
°C
+25 dBm
Description
High Dynamic Range FET Mixer
Operation of this device above any of these parameters may cause permanent damage.
Total sum of LO port and RF port power should not exceed +25 dBm.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www. TriQuint.com
January 2009
HMJ1
High Dynamic Range FET Mixer
Product Information
Typical Performance Data
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www. TriQuint.com
January 2009
HMJ1
High Dynamic Range FET Mixer
Product Information
Outline Drawing
Product Marking
The component will be marked with an
“HMJ7” designator with a four-digit
alphanumeric lot number XXXX.
Tape and reel specifications for this part are
located on the website in the “Application
Notes” section.
ESD Information
ESD Rating:
Value:
Test:
Standard:
ESD Rating:
Value:
Test:
Standard:
Class 2
Passes at 2000 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
Class IV
Passes at 2000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
Dimensions are expressed in Inches.
TOLERANCE .XXX [ .015 .XX [ .02
Drawing is illustrated at Max dimensions.
Mounting Config. Notes
Land Pattern / Mounting Configuration
1. Ground vias are critical for thermal and RF grounding
considerations.
2. A minimum of 36 ground vias are required for 14 mil
FR4 boards.
3. If your PCB design rules allow, ground vias should be
placed under the land pattern for better RF and thermal
performance. Otherwise ground vias should be placed
as close to the land pattern as possible.
4.
Trace width depends on the PCB material.
Specifications and information are subject to change without notice
TriQuint Semiconductor, Inc
•
Phone 1-800-WJ1-4401
•
FAX: 408-577-6633
•
e-mail: info-sales@tqs.com
•
Web site: www. TriQuint.com
January 2009
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