SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
ISSUE 4 - JANUARY 1996
7
FEATURES
* SUITABLE FOR GENERAL AF APPLICATIONS AND
CLASS B AUDIO OUTPUT STAGES UP TO 3W
* HIGH h
FE
AND LOW SATURATION VOLTAGE
COMPLEMENTARY TYPE -
PARTMARKING DETAILS -
BC868 (NPN)
BC869
- CEC
BC869-16 - CHC
BC869-25 - CJC
BC869
C
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
-25
-20
-5
-2
-1
1
-65 to +150
UNIT
V
V
V
A
A
W
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
h
FE
BC869-16
BC869-25
Transition Frequency
Output Capacitance
f
T
C
obo
50
85
60
100
160
60
45
MIN.
-25
-20
-5
-10
-1
-10
-0.5
-1.0
TYP.
MAX.
UNIT
V
V
V
µA
mA
µA
V
V
CONDITIONS.
I
C
=-100µA
I
C
=-10mA*
I
E
=-10µA
V
CB
= -25V
V
CB
= -25V,T
amb
=150
o
C
V
EB
=-5V
I
C
=-1A,I
B
=-100mA*
I
C
=-1A, V
CE
=-1V*
I
C
=-5mA, V
CE
=-10V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-1A, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
I
C
=-500mA, V
CE
=-1V*
MHz
pF
I
C
=-10mA, V
CE
=-5V
f = 35MHz
V
CB
=-10V, f=1MHz
375
250
375
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤2%
For typical characteristics graphs see FMMT549 datasheet
3 - 12
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