PN2907A / MMBT2907A / PZT2907A
PN2907A
MMBT2907A
C
PZT2907A
C
E
C
B
E
C
B
TO-92
E
SOT-23
Mark: 2F
B
SOT-223
PNP General Purpose Amplifier
This device is designed for use as a general purpose amplifier
and switch requiring collector currents to 500 mA. Sourced
from Process 63.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25°C unless otherwise noted
Parameter
Value
60
60
5.0
800
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
PN2907A
625
5.0
83.3
200
Max
*MMBT2907A
350
2.8
357
**PZT2907A
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
1998 Fairchild Semiconductor Corporation
PN2907A / MMBT2907A / PZT2907A
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
B
I
CEX
I
CBO
Collector-Emitter Breakdown Voltage*
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
I
C
= 10 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CB
= 30 V, V
EB
= 0.5 V
V
CE
= 30 V, V
BE
= 0.5 V
V
CB
= 50 V, I
E
= 0
V
CB
= 50 V, I
E
= 0, T
A
= 150°C
60
60
5.0
50
50
0.02
20
V
V
V
nA
nA
µA
µA
ON CHARACTERISTICS
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V*
I
C
= 500 mA, V
CE
= 10 V*
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA*
I
C
= 500 mA, I
B
= 50 mA
75
100
100
100
50
300
0.4
1.6
1.3
2.6
V
V
V
V
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage*
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
I
C
= 50 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0,
f = 100 kHz
V
EB
= 2.0 V, I
C
= 0,
f = 100 kHz
200
8.0
30
MHz
pF
pF
SWITCHING CHARACTERISTICS
t
on
t
d
t
r
t
off
t
s
t
f
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
V
CC
= 6.0 V, I
C
= 150 mA
I
B1
= I
B2
= 15 mA
V
CC
= 30 V, I
C
= 150 mA,
I
B1
= 15 mA
45
10
40
100
80
30
ns
ns
ns
ns
ns
ns
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Spice Model
PNP (Is=650.6E-18 Xti=3 Eg=1.11 Vaf=115.7 Bf=231.7 Ne=1.829 Ise=54.81f Ikf=1.079 Xtb=1.5 Br=3.563 Nc=2
Isc=0 Ikr=0 Rc=.715 Cjc=14.76p Mjc=.5383 Vjc=.75 Fc=.5 Cje=19.82p Mje=.3357 Vje=.75 Tr=111.3n Tf=603.7p
Itf=.65 Vtf=5 Xtf=1.7 Rb=10)
PN2907A / MMBT2907A / PZT2907A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
V
CESAT
- COLLECTOR EMITTE R VOLTAGE (V)
h
FE
- TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain
vs Collector Current
500
V
CE
= 5V
Collector-Emitter Saturation
Voltage vs Collector Current
0.5
β
= 10
0.4
0.3
0.2
0.1
0
125
°
C
- 40
°
C
400
300
200
100
0
0.1
125 °C
25 °C
25 °C
- 40 °C
0.3
1
3
10
30
100
I
C
- COLLECTOR CURRENT (mA)
300
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
500
V
BE( ON)
- BAS E EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
- 40
°
C
Base Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
0
0.1
- 40
°
C
0.8
0.6
0.4
0.2
0
25 °C
25 °C
125
°
C
β
= 10
125
°
C
V
CE
= 5V
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
1
10
I
C
- COLLECTOR CURRE NT (mA)
25
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
CB
= 35V
10
Input and Output Capacitance
vs Reverse Bias Voltage
20
CAPACITANCE (pF)
16
12
C ib
1
8
4
0
0.1
C ob
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
10
REVERSE BIAS VOLTAGE (V)
50
PN2907A / MMBT2907A / PZT2907A
PNP General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Switching Times
vs Collector Current
250
I
B1
= I
B2
=
200
V cc = 15 V
I
c
10
Turn On and Turn Off Times
vs Collector Current
500
I
B1
= I
B2
=
400
V cc = 15 V
I
c
10
TIME (nS)
TIME (nS)
150
100
tr
tf
ts
300
200
t off
50
td
100
0
10
t on
0
10
100
I
C
- COLLECTOR CURRENT (mA)
1000
100
I
C
- COLLECTOR CURRENT (mA)
1000
Rise Time vs Collector
and Turn On Base Currents
I
B1
- TURN 0N BASE CURRENT (mA)
50
P
D
- POWER DISSIPATION (W)
1
Power Dissipation vs
Ambient Temperature
20
10
5
30 ns
t r = 15 V
0.75
SOT-223
TO-92
0.5
SOT-23
0.25
2
60 ns
1
10
100
I
C
- COLLECTOR CURRENT (mA)
500
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
PN2907A / MMBT2907A / PZT2907A
PNP General Purpose Amplifier
(continued)
Typical Common Emitter Characteristics
(f = 1.0kHz)
CHAR. RELATIVE TO VALUES AT I
C
= -10mA
CHAR. RELATIVE TO VALUES AT V
CE
= -10V
Common Emitter Characteristics
5
h
oe
2
1
0.5
h
ie
h
re
h
fe
Common Emitter Characteristics
1.3
h
re
h
ie
h
fe
h
oe
1.2
h
re
and h
oe
1.1
1
h
ie
0.9
h
fe
0.8
-4
I
C
= -10mA
T
A
= 25
o
C
-20
0.2
0.1
_
V
CE
= -10 V
T
A
= 25
o
C
1
_
_
_
_
2
5
10
20
I
C
- COLLECTOR CURRENT (mA)
_
50
-8
-12
-16
V
CE
- COLLECTOR VOLTAGE (V)
CHAR. RELATIVE TO VALUES AT T
A
= 25
o
C
Common Emitter Characteristics
1.5
I
C
= -10mA
1.4
V = -10 V
CE
1.3
1.2
1.1
h
oe
1
0.9
0.8
0.7
0.6
0.5
-40
h
fe
-20
0
20
40
60
80
T
A
- AMBIENT TEMPERATURE (
o
C)
100
h
re
h
ie
h
fe
h
ie
h
re
h
oe
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
