HGTG20N60B3
Data Sheet
October 2004
40A, 600V, UFS Series N-Channel IGBTs
The HGTG20N60B3 is a Generation III MOS gated high
voltage switching devices combining the best features of
MOSFETs and bipolar transistors. These devices have the
high input impedance of a MOSFET and the low on-state
conduction loss of a bipolar transistor. The much lower on-
state voltage drop varies only moderately between 25
o
C and
150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Formerly developmental type TA49050.
Features
• 40A, 600V at T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150
o
C
• Short Circuit Rated
• Low Conduction Loss
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC STYLE TO-247
E
Ordering Information
PART NUMBER
HGTG20N60B3
PACKAGE
TO-247
BRAND
HG20N60B3
C
G
NOTE: When ordering, use the entire part number.
COLLECTOR
(FLANGE)
Symbol
C
G
E
FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
©2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
HGTG20N60B3
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
HGTG20N60B3
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BV
CES
Collector to Gate Voltage, R
GE
= 1MΩ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV
CGR
Collector Current Continuous
At T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C25
At T
C
= 110
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
CM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GEM
Switching Safe Operating Area at T
C
= 150
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Power Dissipation Derating T
C
> 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg
Short Circuit Withstand Time (Note 2) at V
GE
= 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
Short Circuit Withstand Time (Note 2) at V
GE
= 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .t
SC
600
600
40
20
160
±20
±30
30A at 600V
165
1.32
-40 to 150
300
260
4
10
W
W/
o
C
o
C
o
C
o
C
UNITS
V
V
A
A
A
V
V
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. V
CE
= 360V, T
C
= 125
o
C, R
G
= 25Ω.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
CES
BV
ECS
I
CES
V
CE(SAT)
V
GE(TH)
I
GES
SSOA
V
GEP
Q
G(ON)
t
d(ON)I
t
rI
t
d(OFF)I
t
fI
E
ON
E
OFF
R
θJC
TEST CONDITIONS
I
C
= 250µA, V
GE
= 0V
I
C
= -10mA, V
GE
= 0V
V
CE
= BV
CES
I
C
= I
C110
, V
GE
= 15V
I
C
= 250µA, V
CE
= V
GE
V
GE
=
±20V
T
C
= 150
o
C, V
GE
= 15V,
R
G
= 10Ω, L = 45µH
V
CE
= 480V
V
CE
= 600V
V
GE
= 15V
V
GE
= 20V
T
C
= 25
o
C
T
C
= 150
o
C
T
C
= 25
o
C
T
C
= 150
o
C
MIN
600
20
-
-
-
-
3.0
-
100
30
-
-
-
-
-
-
-
-
-
-
TYP
-
-
-
-
1.8
2.1
5.0
-
-
-
8.0
80
105
25
20
220
140
475
1050
-
MAX
-
-
250
1.0
2.0
2.5
6.0
±100
-
-
-
105
135
-
-
275
175
-
-
0.76
UNITS
V
V
µA
mA
V
V
V
nA
A
A
V
nC
nC
ns
ns
ns
ns
µJ
µJ
o
C/W
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Thermal Resistance
NOTE:
I
C
= I
C110
, V
CE
= 0.5 BV
CES
I
C
= I
C110
,
V
CE
= 0.5 BV
CES
T
C
= 150
o
C
I
CE
= I
C110
V
CE
= 0.8 BV
CES
V
GE
= 15V
R
G
= 10Ω
L = 100µH
3. Turn-Off Energy Loss (E
OFF
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (I
CE
= 0A). The HGTG20N60B3 was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
©2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
HGTG20N60B3
Typical Performance Curves
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 150
o
C
60
T
C
= 25
o
C
40
T
C
= -40
o
C
20
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
100
V
GE
= 15V
80
T
C
= 25
o
C
12V
V
GE
= 10V
PULSE DURATION = 250µs
DUTY CYCLE <0.5%
V
GE
= 9V
60
V
GE
= 8.5V
40
V
GE
= 8.0V
20
V
GE
= 7.5V
V
GE
= 7.0V
0
0
2
4
6
8
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
80
0
4
6
8
10
12
V
GE
, GATE TO EMITTER VOLTAGE (V)
FIGURE 1. TRANSFER CHARACTERISTICS
FIGURE 2. SATURATION CHARACTERISTICS
50
I
CE
, DC COLLECTOR CURRENT (A)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
PULSE DURATION = 250µs
DUTY CYCLE <0.5%, V
GE
= 15V
80
T
C
= 25
o
C
40
V
GE
= 15V
30
60
T
C
= -40
o
C
40
T
C
= 150
o
C
20
20
10
0
25
50
75
100
125
150
T
C
, CASE TEMPERATURE (
o
C)
0
0
1
2
3
4
5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
5000
FREQUENCY = 1MHz
C
IES
4000
C, CAPACITANCE (pF)
FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
600
15
V
GE
, GATE TO EMITTER VOLTAGE (V)
480
V
CE
= 600V
360
V
CE
= 400V
V
CE
= 200V
120
T
C
= 25
o
C
0
0
20
40
60
80
100
I
g(REF)
= 1.685mA
R
L
= 30Ω
12
3000
9
2000
C
OES
1000
C
RES
0
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
240
6
3
0
Q
G
, GATE CHARGE (nC)
FIGURE 5. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
FIGURE 6. GATE CHARGE WAVEFORMS
©2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
HGTG20N60B3
Typical Performance Curves
100
t
d(ON)I
, TURN-ON DELAY TIME (ns)
T
J
= 150
o
C, R
G
= 10Ω, L = 100µH
(Continued)
500
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
400
T
J
= 150
o
C, R
G
= 10Ω, L = 100µH
50
40
30
V
CE
= 480V, V
GE
= 15V
300
V
CE
= 480V, V
GE
= 15V
200
20
10
0
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
100
0
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
100
T
J
= 150
o
C, R
G
= 10Ω, L = 100µH
1000
T
J
= 150
o
C, R
G
= 10Ω, L = 100µH
V
CE
= 480V, V
GE
= 15V
t
rI
, TURN-ON RISE TIME (ns)
V
CE
= 480V, V
GE
= 15V
10
t
fI
, FALL TIME (ns)
100
1
0
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
0
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
1400
E
ON
, TURN-ON ENERGY LOSS (µJ)
1200
1000
V
CE
= 480V, V
GE
= 15V
800
600
400
200
0
0
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
2500
E
OFF
, TURN-OFF ENERGY LOSS (µJ)
T
J
= 150
o
C, R
G
= 10Ω, L = 100µH
T
J
= 150
o
C, R
G
= 10Ω, L = 100µH
2000
1500
V
CE
= 480V, V
GE
= 15V
1000
500
0
0
10
20
30
40
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
©2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
HGTG20N60B3
Typical Performance Curves
500
f
MAX
, OPERATING FREQUENCY (kHz)
T
J
= 150
o
C, T
C
= 75
o
C, V
GE
= 15V
R
G
= 10Ω, L = 100µH
V
CE
= 480V
100
f
MAX1
= 0.05/(t
d(OFF)I
+ t
d(ON)I
)
f
MAX2
= (P
D
- P
C
)/(E
ON
+ E
OFF
)
P
D
= ALLOWABLE DISSIPATION
P
C
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R
θJC
= 0.76
o
C/W
10
5
10
20
30
40
(Continued)
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
120
T
C
= 150
o
C, V
GE
= 15V, R
G
= 10Ω
100
80
60
40
20
0
0
100
200
300
400
500
600
700
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
FIGURE 14. SWITCHING SAFE OPERATING AREA
Z
θJC
, NORMALIZED THERMAL RESPONSE
10
0
0.5
0.2
10
-1
0.1
0.05
0.02
0.01
t
1
SINGLE PULSE
DUTY FACTOR, D = t
1
/ t
2
PEAK T
J
= (P
D
X Z
θJC
X R
θJC
) + T
C
P
D
t
2
10
0
10
1
10
-2
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
t
1
, RECTANGULAR PULSE DURATION (s)
FIGURE 15. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveform
L = 100µH
RHRP3060
V
GE
90%
10%
E
OFF
E
ON
R
G
= 10Ω
+
-
V
DD
= 480V
V
CE
90%
I
CE
10%
t
d(OFF)I
t
fI
t
rI
t
d(ON)I
FIGURE 16. INDUCTIVE SWITCHING TEST CIRCUIT
FIGURE 17. SWITCHING TEST WAVEFORMS
©2004 Fairchild Semiconductor Corporation
HGTG20N60B3 Rev.B3
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