FEATURES .................................................................................................................................................................. 5
GENERAL DESCRIPTION ......................................................................................................................................... 7
DATA PROTECTION.................................................................................................................................................. 10
Table 2. Protected Area Sizes................................................................................................................................. 11
(14) Page Program (PP) ......................................................................................................................................... 23
(15) 4 x I/O Page Program (4PP) ........................................................................................................................... 23
(16) Continuously program mode (CP mode) ......................................................................................................... 23
(17) Deep Power-down (DP) .................................................................................................................................. 24
(18) Release from Deep Power-down (RDP), Read Electronic Signature (RES) ................................................... 24
(19) Read Electronic Manufacturer ID & Device ID (REMS), (REMS2), (REMS4) ................................................. 25
(24) HOLD# pin function enable (HDE) .................................................................................................................. 27
POWER-ON STATE ................................................................................................................................................... 28
CAPACITANCE TA = 25°C, f = 1.0 MHz ................................................................................................................. 29
Figure 3. Maximum Positive Overshoot Waveform................................................................................................. 29
Figure 4. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL .................................................................. 30
Table 11. Power-Up Timing and VWI Threshold ..................................................................................................... 46
INITIAL DELIVERY STATE ..................................................................................................................................... 46
Figure A. AC Timing at Device Power-Up ............................................................................................................... 47
ERASE AND PROGRAMMING PERFORMANCE .................................................................................................... 48
ORDERING INFORMATION ...................................................................................................................................... 49
PART NAME DESCRIPTION ..................................................................................................................................... 50
PACKAGE INFORMATION ........................................................................................................................................ 51
REVISION HISTORY ................................................................................................................................................. 53
P/N: PM1468
4
REV. 0.01, FEB. 13, 2009
ADVANCED INFORMATION
MX25V4035
MX25V8035
4M-BIT [x 1/x 2/x 4] 2.5V CMOS SERIAL FLASH
8M-BIT [x 1/x 2/x 4] 2.5V CMOS SERIAL FLASH
FEATURES
GENERAL
• Serial Peripheral Interface compatible -- Mode 0 and Mode 3
•
4M: 4,194,304 x 1 bit structure or 2,097,152 x 2 bits (two I/O read mode) structure or 1,048,576 x 4 bits (four I/
O read mode) structure
8M: 8,388,608 x 1 bit structure or 4,194,304 x 2 bits (two I/O read mode) structure or 2,097,152 x 4 bits (four I/
O read mode) structure
• Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each
- Any Block can be erased individually
• Single Power Supply Operation
- 2.25 to 2.75 volt for read, erase, and program operations
• Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
• High Performance
- Fast read
- 1 I/O: 66MHz with 8 dummy cycles (30pF+1TTL Load)
- 2 I/O: 50MHz with 4 dummy cycles (30pF+1TTL Load), equivalent to 100MHz
- 4 I/O: 50MHz with 6 dummy cycles (30pF+1TTL Load), equivalent to 200MHz
- Fast program time: 1.7ms(typ.) and 6ms(max.)/page (256-byte per page)
- Byte program time: 15us (typical)
- Continuously program mode (automatically increase address under word program mode)
- Fast erase time: 80ms (typ.)/sector (4K-byte per sector); 0.6s(typ.) /block (32K-byte per block); 1s(typ.) /block
(64K-byte per block); 7.5s(typ.) /chip for 4M; 13s(typ.) /chip for 8M
• Low Power Consumption
- Low active read current: 12mA(max.) at 66MHz, 6mA(max.) at 50MHz
- Low active erase/programming current: 15mA (typ.)
- Low standby current: 5uA (max.)
• Deep Power Down: 5uA(max.)
• Minimum 100,000 erase/program cycles
• 10 years data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 status bit defines the size of the area to be software protection against program and erase instruc-
tions
- Additional 512-bit secured OTP for unique identifier
• Auto Erase and Auto Program Algorithm
-
Automatically erases and verifies data at selected sector or block
-
Automatically programs and verifies data at selected page by an internal algorithm that automatically times the
program pulse widths (Any page to be programed should have page in the erased state first)