Supertex inc.
High Voltage EL Lamp Driver IC
Features
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Processed with HVCMOS
®
technology
2.0 to 9.5V operating supply voltage
DC to AC conversion
200V peak-to-peak typical output voltage
Large output load capability typically 50nF
Permits the use of high-resistance elastomeric lamp
components
Adjustable output lamp frequency to control lamp color,
lamp life, and power consumption
Adjustable converter frequency to eliminate harmonics
and optimize power consumption
Enable/disable function
Low current draw under no load condition
Very low standby current - 30nA typical
HV830
General Description
The Supertex HV830 is a high-voltage driver designed for
driving EL lamps of up to 50nF. EL lamps greater than 50nF
can be driven for applications not requiring high brightness.
The input supply voltage range is from 2.0 to 9.5V. The device
uses a single inductor and a minimum number of passive
components. The nominal regulated output voltage that is
applied to the EL lamp is ±100V. The chip can be enabled by
connecting the resistors on the RSW-Osc and REL-Osc pins
to the VDD pin, and disabled when connected to GND.
The HV830 has two internal oscillators, a switching MOSFET
and a high-voltage EL lamp driver. The frequency of the
switching converter MOSFET is set by an external resistor
connected between the RSW-Osc and the VDD pins. The EL
lamp driver frequency is set by an external resistor connected
between the REL-Osc and the VDD pins. An external inductor
is connected between the LX and VDD pins. A 0.01µF to 0.1µF
capacitor is connected between the CS pin and the GND. The
EL lamp is connected between the VA and VB pins.
The switching MOSFET charges the external inductor and
discharges it into the CS capacitor. The voltage at CS will start
to increase. Once the voltage at CS reaches a nominal value
of 100V, the switching MOSFET is turned OFF to conserve
power. The output pins VA and VB are configured as an H-
bridge and are switched in opposite states to achieve 200V
peak-to-peak across the EL lamp.
Applications
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Handheld personal computers
Electronic personal organizers
GPS units
Pagers
Cellular phones
Portable instrumentation
Block Diagram
VDD
RSW-Osc
Switch
Osc
LX
CS
Q
GND
Disable
C
VA
+
_
V
REF
Q
Output
Osc
Q
REL-Osc
Q
VB
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
HV830
Ordering Information
Device
HV830
4.90x3.90mm body
1.75mm height (max)
1.27mm pitch
Pin Configuration
8-Lead SOIC
VDD
RSW-Osc
CS
LX
1
2
3
4
(top view)
8
7
6
5
REL-Osc
VA
VB
GND
HV830LG-G
-G indicates the package is RoHS compliant - “Green”
8-Lead SOIC
8-Lead SOIC (LG)
(top view)
Product Marking
Absolute Maximum Ratings
Parameter
Supply voltage, V
DD
Output voltage, V
CS
Power dissipation
Storage temperature
Operating temperature
Value
-0.5 to +10V
-0.5 to +120V
400mW
-65
O
C to +150
O
C
-25
O
C to +85
O
C
HV830
YWW
LLLL
Y = Last Digit of Year Sealed
WW = Week Sealed
L = Lot Number
= “Green” Packaging
8-Lead SOIC (LG)
Package may or may not include the following marks: Si or
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
Recommended Operating Conditions
Sym
V
DD
f
EL
T
A
Parameter
Supply voltage
V
A-B
output drive frequency
Operating temperature
IN
Min
2.0
-
-25
Typ
-
-
-
Max
9.5
1.5
+85
Unit
V
KHz
O
Conditions
---
---
---
C
DC Electrical Characteristics
(V
Sym
R
DS(ON)
V
CS
V
A
- V
B
I
DDQ
I
DD
I
IN
V
CS
f
EL
f
SW
D
Parameter
= 3.0V, R
SW
= 1.0M
Ω
, R
EL
= 3.3M
Ω
, T
A
= 25°C unless otherwise specified)
Min
-
90
180
-
-
-
-
220
55
-
Typ
2.0
100
200
30
100
35
95
250
65
88
Max
4.0
110
220
-
150
40
-
280
75
-
Unit
Ω
V
V
nA
µA
mA
V
Hz
KHz
%
Conditions
I = 100mA
V
DD
= 2.0V to 9.5V
V
DD
= 2.0V to 9.5V
R
SW-Osc
= Low
V
DD
= 3.0V. See Fig.1
V
DD
= 3.0V. See Fig.1
V
DD
= 3.0V. See Fig.1
V
DD
= 3.0V. See Fig.1
V
DD
= 3.0V. See Fig.1
---
On resistance of switching transistor
Output voltage - regulation
Output peak-to-peak voltage
Quiescent V
DD
current - disabled
V
DD
supply current
Input current including inductor current
Output voltage on V
CS
V
A
- V
B
output drive frequency
Inductor switching frequency
Switching transistor duty cycle
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
2
HV830
Fig.1: Test Circuit, V
IN
= 3.0V
OFF = 0V
1
1.0MΩ
220µH
1
V
DD
= V
IN
= 3.0V
BAS21LT1
0.01µF
200V
Notes:
1. Murata part # LQH4N221K04 (DC resistance < 5.4Ω).
2. Larger values may be required depending upon supply impedance.
2
3
4
RSW-Osc
CS
LX
VA
VB
GND
7
6
5
3.0 square inch lamp.
VDD
ON = V
DD
3.3MΩ
REL-Osc
8
0.1µF
2
1.0nF
HV830
The HV830 can be easily enabled and disabled via a logic
control signal on the R
SW
and R
EL
resistors as shown in Fig.2
below. The control signal can be from a microprocessor. R
SW
and R
EL
are typically very high values, therefore, only 10’s
Enable/Disable Configuration
of microamperes will be drawn from the logic signal when it
is at a logic high (enable) state. When the microprocessor
signal is high the device is enabled and when the signal is
low, it is disabled.
Fig. 2: Enable/Disable Configuration
OFF = 0V
ON = V
DD
Remote Enable
VDD
R
EL
1
LX
+
V
IN
= V
DD
-
4.7µF
15V
BAS21LT1
C
S
200V
R
SW
2
3
4
REL-Osc
VA
VB
GND
8
7
6
5
RSW-Osc
CS
LX
EL Lamp
1.0nF
HV830
Enable/Disable Table
R
SW
Resistor
V
DD
0V
HV830
Enable
Disable
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
3
HV830
Fig. 3 Split Supply Configuration
ON = V
DD
OFF = 0V
V
DD
= Regulated
Voltage
L
X
V
IN
= Battery
Voltage
+
–
0.1µF*
BAS21LT1
C
S
200V
R
SW
Remote
Enable
1
2
3
4
VDD
R
EL
REL-Osc
VA
VB
GND
8
7
6
5
RSW-Osc
CS
LX
EL Lamp
1.0nF
HV830
*
Larger values may be required depending upon supply impedance.
Split Supply Configuration Using a Single Cell (1.5V) Battery
The HV830 can also be used for handheld devices operating
from a single cell 1.5V battery where a regulated voltage is
available. This is shown in Fig. 3. The regulated voltage can
be used to run the internal logic of the HV830. The amount of
current necessary to run the internal logic is typically 100µA
at a V
DD
of 3.0V. Therefore, the regulated voltage could easily
provide the current without being loaded down. The HV830
used in this configuration can also be enabled/disabled via
logic control signal on the R
SW
and R
EL
resistors as shown
in Fig.2.
Split Supply Configuration for Battery Voltages of Higher than 9.5V
Fig. 3 can also be used with high battery voltages, such as
12V, as long as the input voltage, V
DD
, to the HV830 device
is within its specifications of 2.0V to 9.5V.
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
4
HV830
External Component Description
External
Component
Diode
C
S
Capacitor
Description
Fast reverse recovery diode, BAS21LT1 or equivalent.
0.01µF to 0.1µF, 200V capacitor to GND is used to store the energy transferred from the inductor.
The EL lamp frequency is controlled via an external R
EL
resistor connected between REL-Osc and VDD
pins of the device. The lamp frequency increases as R
EL
decreases. As the EL lamp frequency increases,
the amount of current drawn from the battery will increase and the output voltage V
CS
will decrease. The
color of the EL lamp is dependent upon its frequency.
A 3.3MΩ resistor would provide lamp frequency of 220 to 280Hz. Decreasing the R
EL-Osc
by a factor of 2
will increase the lamp frequency by a factor of 2.
The switching frequency of the converter is controlled via an external resistor, R
SW
between the RSW-Osc
and VDD pins of the device. The switching frequency increases as R
SW
decreases. With a given inductor,
as the switching frequency increases, the amount of current drawn from the battery will decrease and the
output voltage, V
CS
, will also decrease.
A 1nF capacitor is recommended between the RSW-Osc pin and GND when a 0.01µF C
S
capacitor is
used. This capacitor is used to shunt any switching noise that may couple into the RSW-Osc pin. The C
SW
capacitor may also be needed when driving large EL lamp due to increase in switching noise. A C
SW
larger
than 1.0nF is not recommended.
The inductor L
X
is used to boost the low input voltage by inductive flyback. When the internal switch is
on, the inductor is being charged. When the internal switch is off, the charge stored in the inductor will
be transferred to the high voltage capacitor C
S
. The energy stored in the capacitor is connected to the
internal H-bridge and therefore to the EL lamp. In general, smaller value inductors, which can handle
more current, are more suitable to drive larger size lamps. As the inductor value decreases, the switching
frequency of the inductor (controlled by R
SW
) should be increased to avoid saturation.
220µH Murata inductors with 5.4Ω series DC resistance is typically recommended. For inductors with the
same inductance value but with lower series DC resistance, lower R
SW
value is needed to prevent high
current draw and inductor saturation.
As the EL lamp size increases, more current will be drawn from the battery to maintain high voltage across
the EL lamp. The input power, (V
IN
x I
IN
), will also increase. If the input power is greater than the power dis-
sipation of the package (400mW), an external resistor in series with one side of the lamp is recommended
to help reduce the package power dissipation.
R
EL-Osc
R
SW-Osc
C
SW
Capacitor
L
X
Inductor
Lamp
Supertex inc.
●
1235 Bordeaux Drive, Sunnyvale, CA 94089
●
Tel: 408-222-8888
●
www.supertex.com
5
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