Freescale Semiconductor
Technical Data
Document Number: MW7IC2750N
Rev. 4, 10/2011
RF LDMOS Wideband Integrated
Power Amplifiers
The MW7IC2750N wideband integrated circuit is designed with on--chip
matching that makes it usable from 2300 -- 2700 MHz. This multi -- stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular
base station modulation formats.
•
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ1
= 160 mA, I
DQ2
= 550 mA,
P
out
= 8 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 26 dB
Power Added Efficiency — 17%
Device Output Signal PAR — 8.6 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --49 dBc in 1 MHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 2600 MHz, 80 Watts CW Output
Power (3 dB Input Overdrive from Rated P
out
)
•
Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 1 mW to 80 W CW P
out
•
Typical P
out
@ 1 dB Compression Point
≃
50 Watts CW
Driver Applications
•
Typical WiMAX Performance: V
DD
= 28 Volts, I
DQ1
= 160 mA, I
DQ2
= 550 mA,
P
out
= 4 Watts Avg., f = 2700 MHz, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts,
10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF.
Power Gain — 26 dB
Power Added Efficiency — 11%
Device Output Signal PAR — 9.2 dB @ 0.01% Probability on CCDF
ACPR @ 8.5 MHz Offset — --57 dBc in 1 MHz Channel Bandwidth
Features
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
•
On--Chip Matching (50 Ohm Input, DC Blocked)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
•
225°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.
MW7IC2750NR1
MW7IC2750GNR1
MW7IC2750NBR1
2500-
-2700 MHz, 8 W AVG., 28 V
WiMAX
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618-
-02
TO-
-270 WB-
-14
PLASTIC
MW7IC2750NR1
CASE 1621-
-02
TO-
-270 WB-
-14 GULL
PLASTIC
MW7IC2750GNR1
CASE 1617-
-02
TO-
-272 WB-
-14
PLASTIC
MW7IC2750NBR1
V
DS1
RF
in
RF
out
/V
DS2
V
GS1
V
GS2
Quiescent Current
Temperature Compensation
(1)
V
DS1
V
GS2
V
GS1
NC
NC
RF
in
RF
in
NC
NC
V
GS1
V
GS2
V
DS1
1
2
3
4
5
6
7
8
9
10
11
12
14
RF
out
/V
DS2
13
RF
out
/V
DS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2008, 2010--2011. All rights reserved.
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
1
RF Device Data
Freescale Semiconductor, Inc.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
30
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CW Application
(Case Temperature 80°C, P
out
= 50 W CW)
Final Application
(Case Temperature 70°C, P
out
= 8 W CW)
Driver Application
(Case Temperature 65°C, P
out
= 4 W CW)
Stage 1, 28 Vdc, I
DQ1
= 160 mA
Stage 2, 28 Vdc, I
DQ2
= 550 mA
Stage 1, 28 Vdc, I
DQ1
= 160 mA
Stage 2, 28 Vdc, I
DQ2
= 550 mA
Stage 1, 28 Vdc, I
DQ1
= 160 mA
Stage 2, 28 Vdc, I
DQ2
= 550 mA
Symbol
R
θJC
Value
(2,3)
3.0
0.7
2.9
0.7
2.8
0.7
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
1C
A
III
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 46
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1
= 160 mA, Measured in Functional Test)
Stage 1 — Dynamic Characteristics
(4)
Input Capacitance
(V
DS
= 28 Vdc, V
GS
= 0 Vdc
±
30 mV(rms)ac @ 1 MHz)
C
iss
—
550
—
pF
V
GS(th)
V
GS(Q)
1
3
2
3.8
3
4.5
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Part internally matched both on input and output.
(continued)
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 185
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2
= 550 mA, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 1 Adc)
Stage 2 — Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
C
oss
—
—
0.68
220
—
—
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2.8
0.1
2
3.6
0.12
3
4.3
0.8
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 160 mA, I
DQ2
= 550 mA, P
out
= 8 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @
±8.5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
PAR
ACPR
IRL
24
15
7.8
—
—
26
17
8.6
--49
--12
31
—
—
--45
--10
dB
%
dB
dBc
dB
Typical Performances OFDM Signal — 10 MHz Channel Bandwidth
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
=
160 mA, I
DQ2
= 550 mA, P
out
= 8 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 10 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Relative Constellation Error
(2)
Error Vector Magnitude
(2)
RCE
EVM
—
—
--33
2.3
—
—
dB
% rms
Typical Performances OFDM Signal — 7 MHz Channel Bandwidth
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
=
160 mA, I
DQ2
= 550 mA, P
out
= 8 W Avg., f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 7 MHz Channel Bandwidth, Input
Signal PAR = 9.5 dB @ 0.01% Probability on CCDF.
Mask System Type G
Point B at 3.5 MHz Offset
Point C at 5 MHz Offset
Point D at 7.4 MHz Offset
Point E at 14 MHz Offset
Point F at 17.5 MHz Offset
Relative Constellation Error
(2)
Error Vector Magnitude
(2)
1. Part internally matched both on input and output.
2. RCE = 20Log(EVM/100)
(continued)
RCE
EVM
Mask
—
—
—
—
—
—
—
--27
--40
--43
--58
--63
--33
2.3
—
—
—
—
—
—
—
dB
% rms
dBc
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
RF Device Data
Freescale Semiconductor, Inc.
3
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 50 W PEP, P
out
where IMD Third Order
Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 200 MHz Bandwidth @ P
out
= 8 W Avg.
Average Deviation from Linear Phase in 200 MHz Bandwidth
@ P
out
= 50 W CW
Average Group Delay @ P
out
= 50 W CW, f = 2600 MHz
Part--to--Part Insertion Phase Variation @ P
out
= 50 W CW,
f = 2600 MHz, Six Sigma Window
Gain Variation over Temperature
(--30°C to +85°C)
Output Power Variation over Temperature
(--30°C to +85°C)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
55
60
Max
—
—
Unit
W
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 160 mA, I
DQ2
= 550 mA, 2700 MHz Bandwidth
VBW
res
G
F
Φ
Delay
∆Φ
∆G
∆P1dB
—
—
—
—
—
—
—
50
0.5
1.1
2.3
38.7
0.037
0.005
—
—
—
—
—
—
—
MHz
dB
°
ns
°
dB/°C
dB/°C
Typical Driver Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 160 mA, I
DQ2
= 550 mA, P
out
= 4 W Avg.,
f = 2700 MHz, WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability
on CCDF. ACPR measured in 1 MHz Channel Bandwidth @
±8.5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
Relative Constellation Error @ P
out
= 2.5 W Avg.
(1)
1. RCE = 20Log(EVM/100)
G
ps
PAE
PAR
ACPR
IRL
RCE
—
—
—
—
—
—
26
11
9.2
--57
--13
--39
—
—
—
—
—
—
dB
%
dB
dBc
dB
dB
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
4
RF Device Data
Freescale Semiconductor, Inc.
V
DD2
V
DD1
C2
RF
INPUT
C4
Z5
C6
NC
NC
Z1
C1
V
GG1
V
GG2
R1
R2
Z4
C3
C5
C7
Z2
Z3
NC
NC
1
2
3
4
5
6
7
8
9
10
11
12
Quiescent Current
Temperature
Compensation
13
Z11
C11
14
Z6
Z7
DUT
Z12
C10
Z8
C12
Z9
C15
Z10
RF
OUTPUT
C8
C13
C9
C14
Z1
Z2
Z3
Z4, Z5
Z6
Z7
0.662″ x 0.064″ Microstrip
1.530″ x 0.064″ Microstrip
0.126″ x 0.060″ Microstrip
0.771″ x 0.046″ Microstrip
0.192″ x 0.860″ Microstrip
0.280″ x 0.719″ Microstrip
Z8
Z9
Z10
Z11, Z12
PCB
0.417″ x 0.064″ Microstrip
1.137″ x 0.064″ Microstrip
0.293″ x 0.064″ Microstrip
0.615″ x 0.095″ Microstrip
Rogers RO4350B, 0.030″,
ε
r
= 3.5
Figure 3. MW7IC2750NR1(GNR1)(NBR1) Test Circuit Schematic
Table 6. MW7IC2750NR1(GNR1)(NBR1) Test Circuit Component Designations and Values
Part
C1
C2, C3, C13, C14
C4, C5, C8, C9, C15
C6, C7
C10, C11
C12
R1, R2
Description
0.8 pF Chip Capacitor
10
μF,
50 V Chip Capacitors
5.1 pF Chip Capacitors
1
μF,
100 V Chip Capacitors
0.2 pF Chip Capacitors
0.5 pF Chip Capacitor
1 kΩ, 1/4 W Chip Resistors
Part Number
ATC100B0R8BT500XT
GRM55DR61H106KA88B
ATC100B5R1CT500XT
GRM32ER72A105KA01L
ATC100B0R2BT500XT
ATC100B0R5BT500XT
CRCW12061001FKEA
Manufacturer
ATC
Murata
ATC
Murata
ATC
ATC
Vishay
MW7IC2750NR1 MW7IC2750GNR1 MW7IC2750NBR1
RF Device Data
Freescale Semiconductor, Inc.
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
