Freescale Semiconductor
Technical Data
Document Number: MW7IC2425N
Rev. 0, 3/2009
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications at
2450 MHz. Devices are suitable for use in industrial, medical and scientific
applications.
•
Typical CW Performance: V
DD
= 28 Volts, I
DQ1
= 55 mA, I
DQ2
= 195 mA,
P
out
= 25 Watts CW, f = 2450 MHz
Power Gain — 27.7 dB
Power Added Efficiency — 43.8%
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW
Output Power
Features
•
Qualified Up to a Maximum of 28 V
DD
Operation
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
Excellent Thermal Stability
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MW7IC2425NR1
MW7IC2425GNR1
MW7IC2425NBR1
2450 MHz, 25 W CW, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1886 - 01
TO - 270 WB - 16
PLASTIC
MW7IC2425NR1
CASE 1887 - 01
TO - 270 WB - 16 GULL
PLASTIC
MW7IC2425GNR1
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW7IC2425NBR1
V
DS1
RF
in
RF
out
/V
DS2
GND
V
DS1
NC
NC
NC
RF
in
NC
V
GS1
V
GS2
V
DS1
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out
/V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2009. All rights reserved.
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
- 0.5, +65
- 0.5, +10
32, +0
- 65 to +150
150
225
20
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
(In Freescale Narrowband Test Fixture)
Characteristic
Thermal Resistance, Junction to Case
(Case Temperature 80°C, P
out
= 25 W CW)
Stage 1, 28 Vdc, I
DQ1
= 55 mA
Stage 2, 28 Vdc, I
DQ2
= 195 mA
Symbol
R
θJC
Value
(2,3)
6.1
1.2
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Stage 1 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 - On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 20
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1
= 55 mA)
(4)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1
= 55 mAdc)
(4,5)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.2
—
10.3
1.9
2.7
11.2
2.7
—
12.6
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
4. Measured in Freescale Narrowband Test Fixture.
5. See Appendix A for functional test measurements and test fixture.
(continued)
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Stage 2 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 - On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 80
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2
= 195 mAdc)
(1)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2
= 195 mAdc)
(1,2)
Drain - Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 800 mAdc)
Stage 2 - Dynamic Characteristics
(3)
Output Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
oss
—
111
—
pF
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1.2
—
9.5
0.15
1.9
2.7
10.5
0.47
2.7
—
11.5
0.8
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Narrowband Performance Specifications
(4)
(In Freescale Narrowband Test Fixture,
(2)
50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 55 mA,
I
DQ2
= 195 mA, P
out
= 25 W CW, f = 2450 MHz
Power Gain
Power Added Efficiency
Input Return Loss
G
ps
PAE
IRL
25.5
41.5
—
27.7
43.8
- 18
30.5
—
- 10
dB
%
dB
Functional Tests
(2)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 77 mA, I
DQ2
= 275 mA, P
out
= 4 W Avg., f = 2700 MHz,
WiMAX, OFDM 802.16d, 64 QAM
3
/
4
, 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
measured in 1 MHz Channel Bandwidth @
±8.5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
1.
2.
3.
4.
G
ps
PAE
PAR
ACPR
IRL
25.5
15
—
—
—
28.5
17
9
- 50
- 15
30.5
—
—
- 46
- 10
dB
%
dB
dBc
dB
Measured in Freescale Narrowband Test Fixture.
See Appendix A for functional test fixture documentation.
Part internally matched both on input and output.
Measurement made with device in straight lead configuration before any lead forming operation is applied.
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
3
V
DD1
C17
C9
C8
V
D2
C16
C15
B1
28 V
C14
C7
1
2
3
4
5
Z1
Z2
Z3
C4
C5
C6
V
G1
R4
V
G2
R1
R2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.500″
0.075″
1.640″
0.100″
0.151″
0.025″
0.100″
0.306″
x 0.027″
x 0.127″
x 0.027″
x 0.042″
x 0.268″
x 0.268″
x 0.056″
x 0.056″
Microstrip
Microstrip
Microstrip
Microstrip
Microstrip
x 0.056″ Taper
Microstrip
Microstrip
Z9
Z10
Z11
Z12
Z13*
Z14
PCB
0.040″ x 0.061″ Microstrip
0.020″ x 0.050″ Microstrip
0.050″ x 0.050″ Microstrip
0.050″ x 0.027″ Microstrip
0.338″ x 0.020″ Microstrip
1.551″ x 0.027″ Microstrip
Rogers R04350B, 0.0133″,
ε
r
= 3.48
R5
R6
C2
C3
C1
Z4
6
C11
7 NC
8
9
10
11 NC
C10
Quiescent Current
Temperature
Compensation
NC
NC
NC
NC
14
Z5
Z6
Z7
Z8
Z9
Z10
Z11
DUT
NC 16
NC 15
Z13
Z12 Z14
C13
C12
RF
INPUT
RF
OUTPUT
NC 13
NC 12
* Line length includes microstrip bends
Figure 3. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Schematic
Table 6. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Designations and Values
Part
B1
C1, C4, C7, C12, C15
C2, C5, C8, C13
C3, C6, C9, C14
C10
C11
C16, C17
R1, R4
R2, R3, R5, R6
Description
47
Ω,
100 MHz Short Ferrite Bead
6.8 pF Chip Capacitors
10 nF Chip Capacitors
1
μF,
50 V Chip Capacitors
2.4 pF Chip Capacitor
3.3 pF Chip Capacitor
10
μF,
50 V Chip Capacitors
12 KΩ, 1/4 W Chip Resistors
1 KΩ, 1/4 W Chip Resistors
Part Number
2743019447
ATC600S6R8CT250XT
C0603C103J5RAC
GRM32RR71H105KA01B
ATC600S2R4BT250XT
ATC600S3R3BT250XT
GRM55DR61H106KA88B
CRCW12061202FKEA
CRCW12061001FKEA
Manufacturer
Fair - Rite
ATC
Kemet
Murata
ATC
ATC
Murata
Vishay
Vishay
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
4
RF Device Data
Freescale Semiconductor
MW7IC2425N
Rev. 1
B1
C17
C8
C7
C4
R4
R5
C5
R6
C1
C2
V
G1
R1
V
G2
R2
R3
C6
C9
C15
C14
C13
CUT OUT AREA
C16
C12
C10
C11
C3
Figure 4. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Layout
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
5
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