Freescale Semiconductor
Technical Data
Document Number: MDE6IC9120N
Rev. 0, 11/2009
RF LDMOS Wideband Integrated
Power Amplifiers
The MDE6IC9120N/GN wideband integrated circuit is designed with
on - chip matching that makes it usable from 920 to 960 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulation formats.
•
Typical Doherty Single - Carrier W - CDMA Performance: V
DD
= 28 Volts,
I
DQ1A
= I
DQ1B
= 90 mA, I
DQ2A
= 550 mA, V
G2B
= 1.6 Vdc, P
out
= 25 Watts
Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency
920 MHz
940 MHz
960 MHz
G
ps
(dB)
32.5
32.0
31.3
PAE
(%)
38.4
38.0
37.7
Output PAR
(dB)
6.6
6.7
7.0
ACPR
(dBc)
- 39.0
- 40.4
- 39.6
MDE6IC9120NR1
MDE6IC9120GNR1
920 - 960 MHz, 25 W AVG., 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 940 MHz, 146 Watts CW
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
•
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to
120 Watts CW P
out
•
Typical P
out
@ 1 dB Compression Point
]
120 Watts CW
Features
•
Production Tested in a Symmetrical Doherty Configuration
•
100% PAR Tested for Guaranteed Output Power Capability
•
Characterized with Series Equivalent Large - Signal Impedance
Parameters and Common Source S - Parameters
•
On - Chip Matching (50 Ohm Input, DC Blocked)
•
Integrated Quiescent Current Temperature Compensation with Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
V
GS1A
RF
inA
CARRIER
(2)
RF
out1
/V
DS2A
V
GS1A
GND
RF
inA
GND
GND
V
GS2A
V
DS1A
V
DS1B
V
GS2B
GND
GND
RF
inB
GND
V
GS1B
CASE 1866 - 02
TO - 270 WBL - 16
PLASTIC
MDE6IC9120NR1
CASE 1867 - 02
TO - 270 WBL - 16 GULL
PLASTIC
MDE6IC9120GNR1
V
GS2A
V
DS1A
V
DS1B
V
GS2B
RF
inB
V
GS1B
Quiescent Current
Temperature Compensation
(1)
PEAKING
(2)
RF
out2
/V
DS2B
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
RF
out1
/V
DS2A
15
RF
out2
/V
DS2B
(Top View)
Quiescent Current
Temperature Compensation
(1)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
2. Peaking and Carrier orientation is determined by the test fixture design.
©
Freescale Semiconductor, Inc., 2009. All rights reserved.
MDE6IC9120NR1 MDE6IC9120GNR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
P
in
Value
- 0.5, +66
- 0.5, +10
32, +0
- 65 to +150
150
225
30
Unit
Vdc
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Final Doherty Application
Thermal Resistance, Junction to Case
Case Temperature 80°C, P
out
= 30 W CW
Stage 1A, 27 Vdc, I
DQ1A
= 90 mA
Stage 1B, 27 Vdc, I
DQ1B
= 90 mA
Stage 2A, 27 Vdc, I
DQ2A
= 550 mA
Stage 2B, 27 Vdc, V
G2B
= 2.5 Vdc
R
θJC
6.0
4.9
1.3
0.95
°C/W
Symbol
Value
(2,3)
Unit
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
1B (Minimum)
A (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
MDE6IC9120NR1 MDE6IC9120GNR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 20
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ1A
= I
DQ1B
= 90 mA)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 90 mA, Measured in Functional Test)
Stage 2 — Off Characteristics
(1)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 1.5 Vdc, V
DS
= 0 Vdc)
Stage 2 — On Characteristics
(1)
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 160
μAdc)
Gate Quiescent Voltage
(V
DS
= 28 Vdc, I
DQ2A
= 550 mA)
Fixture Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
DQ2A
= 550 mA, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 407 mA)
V
GS(th)
V
GS(Q)
V
GG(Q)
V
DS(on)
1
—
5.8
0.15
1.7
2.1
6.5
0.3
3
—
7.2
0.8
Vdc
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
V
GS(th)
V
GS(Q)
V
GG(Q)
1
—
7.4
1.7
2.5
8.1
3
—
8.8
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(2,3,4)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 90 mA, I
DQ2A
= 550 mA, V
G2B
=
1.6 Vdc, P
out
= 25 W Avg., f = 940 MHz, Single- Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on
CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Power Gain
Power Added Efficiency
Output Peak - to - Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
G
ps
PAE
PAR
ACPR
30.0
36.0
5.8
—
32.0
38.0
6.7
- 40.4
36.0
—
—
- 36.0
dB
%
dB
dBc
Typical Broadband Performance
(3)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 90 mA, I
DQ2A
=
550 mA, V
G2B
= 1.6 Vdc, P
out
= 25 W Avg., Single - Carrier W - CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset
Frequency
920 MHz
940 MHz
960 MHz
1.
2.
3.
4.
G
ps
(dB)
32.5
32.0
31.3
PAE
(%)
38.4
38.0
37.7
Output PAR
(dB)
6.6
6.7
7.0
ACPR
(dBc)
- 39.0
- 40.4
- 39.6
Each side of device measured separately.
Part internally matched both on input and output.
Measurement made with device in a Symmetrical Doherty configuration.
Measurement made with device in straight lead configuration before any lead forming operation is applied.
(continued)
MDE6IC9120NR1 MDE6IC9120GNR1
RF Device Data
Freescale Semiconductor
3
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(1)
(In Freescale Doherty Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1A
= I
DQ1B
= 90 mA, I
DQ2A
= 550 mA,
V
G2B
= 1.6 Vdc, 920 - 960 MHz Bandwidth
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 90 W PEP, P
out
where IMD Third Order
Intermodulation
`
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Quiescent Current Accuracy over Temperature
(2)
with 4.3 kΩ Gate Feed Resistors ( - 30 to 85°C)
Gain Flatness in 40 MHz Bandwidth @ P
out
= 25 W Avg.
Gain Variation over Temperature
( - 30°C to +85°C)
Output Power Variation over Temperature
( - 30°C to +85°C)
Stage 1
Stage 2
P1dB
IMD
sym
—
—
120
8
—
—
W
MHz
VBW
res
ΔI
QT
G
F
ΔG
ΔP1dB
—
—
—
—
—
—
50
0.02
0.03
1.2
0.04
0.02
—
—
—
—
—
—
MHz
%
dB
dB/°C
dBm/°C
1. Measurement made with device in a Symmetrical Doherty configuration.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or
AN1987.
MDE6IC9120NR1 MDE6IC9120GNR1
4
RF Device Data
Freescale Semiconductor
R3
V
G1
C3
MDE6IC9120N
Rev 2A
V
D2
C19
C13
C27
R5
C9 C5
C6
C7
R1
C12
V
D1
V
G2
C2
C28
C10 C8
R6
C1
C21
C23
C25
C26
C24
C22
C17
V
G2
V
D1
Coupler 1
C11
CUT OUT AREA
C18
C14
R4
V
G1
C4
V
D2
C20
Note: Component numbers C15, C16 and R2 are not used.
Figure 3. MDE6IC9120NR1(GNR1) Test Circuit Component Layout
Table 6. MDE6IC9120NR1(GNR1) Test Circuit Component Designations and Values
Part
C1, C2, C5, C6, C7, C8
C3, C4, C9, C10, C11, C12
C13, C14, C27, C28
C17, C18
C19, C20
C21, C22
C23, C24
C25, C26
Coupler 1
R1
R3, R4, R5, R6
PCB
Description
0.01
μF,
50 V Chip Capacitors
1.0
μF,
35 V Chip Capacitors
39.0 pF Chip Capacitors
10.0
μF,
35 V Chip Capacitors
220
μF,
50 V Electrolytic Capacitors
15.0 pF Chip Capacitors
1.6 pF Chip Capacitors
2.7 pF Chip Capacitors
50
Ω,
3 dB Hybrid Coupler
50
Ω,
10 W Termination
4.3 KΩ, 1/4 W Chip Resistors
0.020″,
ε
r
= 3.50
Part Number
GCM2195C1H103JA16D
GRM32RR71H105KA01K
ATC600F390JT250XT
GRM55DR61H106KA88L
EMVY500ADA221MJA0G
ATC600F150GT250XT
ATC600F1R6JT250XT
ATC600F2R7JT250XT
GSC362- HYB0900
RFP - 060120A15Z50- 2
CRCW12064K30FKEA
RO4350B
Manufacturer
Murata
Murata
ATC
Murata
Nippon Chemi - Con
ATC
ATC
ATC
Soshin
Anaren
Vishay
Rogers
MDE6IC9120NR1 MDE6IC9120GNR1
RF Device Data
Freescale Semiconductor
5
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