Document Number: MW4IC2230
Freescale Semiconductor
Rev. 5, 5/2006
Technical Data
Replaced by MW4IC2230NBR1(GNBR1). There are no form, fit or function changes with this
RF LDMOS Wideband Integrated
Power Amplifiers
part replacement. N suffix added to part number to indicate transition to lead - free terminations.
The MW4IC2230M wideband integrated circuit is designed for W - CDMA
base station applications. It uses Freescale’s newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi - stage structure. Its
wideband on- chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W - CDMA.
Final Application
•
Typical Single - Carrier W - CDMA Performance:
V
DD
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = - 45 dBc in 3.84 MHz Bandwidth
Driver Application
•
Typical Single - Carrier W - CDMA Performance:
V
DD
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = - 53.5 dBc in 3.84 MHz Bandwidth
•
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
•
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 10 mW to 5 W CW
P
out
.
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
•
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
MW4IC2230MBR1
MW4IC2230GMBR1
2110 - 2170 MHz, 30 W, 28 V
SINGLE W - CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
ARCHIVE INFORMATION
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2230MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2230GMBR1
V
RD1
V
RG1
V
DS2
V
DS1
GND
V
DS2
V
RD1
V
RG1
V
DS1
3 Stages I
C
RF
in
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
14
V
DS3/
RF
out
RF
in
V
DS3
/RF
out
V
GS1
V
GS2
V
GS3
V
GS1
V
GS2
V
GS3
GND
13
12
(Top View)
GND
Quiescent Current
Temperature Compensation
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW4IC2230MBR1 MW4IC2230GMBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Channel Temperature
Input Power
Symbol
V
DSS
V
GS
T
stg
T
J
P
in
Value
- 0.5, +65
- 0.5, +8
- 65 to +175
200
20
Unit
Vdc
Vdc
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Stage 1
Stage 2
Stage 3
Symbol
R
θJC
Value
(1)
10.5
5.1
2.3
Unit
°C/W
ARCHIVE INFORMATION
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 60 mA, I
DQ2
= 350 mA, I
DQ3
= 265 mA,
P
out
= 0.4 W Avg., f = 2110 MHz, f = 2170 MHz, Single - carrier W - CDMA. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz
Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Input Return Loss
Adjacent Channel Power Ratio
P
out
= 0.4 W Avg.
P
out
= 1.26 W Avg.
G
ps
IRL
ACPR
—
—
- 53.5
- 52
- 50
—
29
—
31.5
- 25
—
- 10
dB
dB
dBc
Typical Performances
(In Freescale Test Fixture tuned for 0.4 W Avg. W - CDMA driver) V
DD
= 28 Vdc, I
DQ1
= 60 mA, I
DQ2
= 350 mA,
I
DQ3
= 265 mA, 2110 MHz<Frequency <2170 MHz
Saturated Pulsed Output Power
(f = 1 kHz, Duty Cycle 10%)
Quiescent Current Accuracy over Temperature ( - 10 to 85°C)
(2)
Gain Flatness in 30 MHz Bandwidth
Deviation from Linear Phase in 30 MHz Bandwidth
Delay @ P
out
= 0.4 W CW Including Output Matching
Part - to - Part Phase Variation
P
sat
ΔI
QT
G
F
Φ
Delay
ΔΦ
—
—
—
—
—
—
43
±5
0.13
±1
1.6
±15
—
—
—
—
—
—
W
%
dB
°
ns
°
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
(continued)
MW4IC2230MBR1 MW4IC2230GMBR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Reference Application Circuit tuned for 2 - carrier W - CDMA signal) V
DD
= 28 Vdc,
P
out
= 0.4 W Avg., I
DQ1
= 60 mA, I
DQ2
= 400 mA, I
DQ3
= 245 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz,
2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3
measured in 3.84 MHz Channel Bandwidth @
±10
MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
G
ps
IM3
ACPR
IRL
—
—
—
—
31.5
- 52
- 55
- 26
—
—
—
—
dB
dBc
dBc
dB
ARCHIVE INFORMATION
MW4IC2230MBR1 MW4IC2230GMBR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
V
D2
+
V
D1
+
C1
RF
INPUT
C6
Z1
6
C10
V
G1
V
G2
V
G3
R1
R2
7 NC
8
9
10
11
Quiescent Current
Temperature Compensation NC 13
12
+
R3
C11
C12
C2
C5
1
2
3 NC
4 NC
5
DUT
16
NC 15
Z2
C7
+
C3
V
D3
C9
14 Z4
Z5
Z6
Z7
RF
OUTPUT
Z3
ARCHIVE INFORMATION
Z1
Z2, Z3
Z4
Z5
2.180″ x 0.090″ Microstrip
0.040″ x 0.430″ Microstrip
0.350″ x 0.240″ Microstrip
0.420″ x 0.090″ Microstrip
Z6
Z7
PCB
1.120″ x 0.090″ Microstrip
0.340″ x 0.090″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
Figure 3. MW4IC2230MBR1(GMBR1) Test Circuit Schematic
Table 6. MW4IC2230MBR1(GMBR1) Test Circuit Component Designations and Values
Part
C1, C2, C3, C4
C5, C6, C7, C8, C12
C9, C10
C11
R1, R2, R3
Description
10
μF,
35 V Tantalum Capacitors
8.2 pF 100B Chip Capacitors
1.8 pF 100B Chip Capacitors
0.3 pF 100B Chip Capacitor
1.8 kW Chip Resistors (1206)
Part Number
TAJD106K035
100B8R2CW
100B1R8BW
100B0R3BW
Manufacturer
AVX
ATC
ATC
ATC
MW4IC2230MBR1 MW4IC2230GMBR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
C8
C4
C2
V
D2
MW4IC2230
Rev 1
C3
V
D1
V
D3
C5
C7
C1
C6
C12
C9
C11
C10
ARCHIVE INFORMATION
R1
V
G1
R2
V
G2
R3
V
G3
C8
GND
C4
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW4IC2230MBR1(GMBR1) Test Circuit Component Layout
MW4IC2230MBR1 MW4IC2230GMBR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
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