Document Number: MW4IC2020
Freescale Semiconductor
Rev. 8, 5/2006
Technical Data
Replaced by MW4IC2020NBR1(GNBR1). There are no form, fit or function changes with this
RF LDMOS Wideband Integrated
Power Amplifiers
part replacement. N suffix added to part number to indicate transition to lead - free terminations.
The MW4IC2020 wideband integrated circuit is designed with on - chip
matching that makes it usable from 1600 to 2400 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
•
Typical Two - Tone Performance: V
DD
= 26 Volts, I
DQ1
= 80 mA, I
DQ2
=
200 mA, I
DQ3
= 300 mA, P
out
= 20 Watts PEP, Full Frequency Band
Power Gain — 29 dB
IMD — - 32 dBc
Drain Efficiency — 26% (at 1805 MHz) and 20% (at 1990 MHz)
Driver Applications
•
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ1
= 80 mA, I
DQ2
=
230 mA, I
DQ3
= 230 mA, P
out
= 5 Watts Avg., Full Frequency Band
Power Gain — 29 dB
Spectral Regrowth @ 400 kHz Offset = - 66 dBc
Spectral Regrowth @ 600 kHz Offset = - 77 dBc
EVM — 1% rms
•
Typical CDMA Performance: V
DD
= 26 Volts, I
DQ1
= 80 mA, I
DQ2
=
240 mA, I
DQ3
= 250 mA, P
out
= 1 Watt Avg., Full Frequency Band, IS - 95
CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Band-
width = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 30 dB
ACPR @ 885 kHz Offset = - 61 dBc in 30 kHz Bandwidth
ALT1 @ 1.25 MHz Offset = - 69 dBc in 12.5 kHz Bandwidth
ALT2 @ 2.25 MHz Offset = - 59 dBc in 1 MHz Bandwidth
•
Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW
Output Power
•
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW
P
out
.
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
•
Integrated Temperature Compensation with Enable/Disable Function
•
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
V
RD1
V
RG1
V
DS2
V
DS1
MW4IC2020MBR1
MW4IC2020GMBR1
1805- 1990 MHz, 20 W, 26 V
GSM/GSM EDGE, CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
ARCHIVE INFORMATION
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW4IC2020MBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW4IC2020GMBR1
GND
V
DS2
V
RD1
V
RG1
V
DS1
3 Stages I
C
RF
in
V
DS3
/RF
out
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
14
V
DS3/
RF
out
RF
in
V
GS1
V
GS2
V
GS3
Quiescent Current
Temperature Compensation
V
GS1
V
GS2
V
GS3
GND
13
12
GND
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW4IC2020MBR1 MW4IC2020GMBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Symbol
V
DSS
V
GS
T
stg
T
J
P
in
Value
- 0.5, +65
- 0.5, +15
- 65 to +175
200
20
Unit
Vdc
Vdc
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Stage 1
Stage 2
Stage 3
Symbol
R
θJC
Value
(1)
10.5
5.1
2.3
Unit
°C/W
ARCHIVE INFORMATION
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
2 (Minimum)
M3 (Minimum)
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 80 mA, I
DQ2
= 200 mA,
I
DQ3
= 300 mA, P
out
= 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW
Power Gain
Drain Efficiency
f1 = 1805 MHz, f2 = 1805.1 MHz
f1 = 1990 MHz, f2 = 1990.1 MHz
Input Return Loss
Intermodulation Distortion
G
ps
η
D
27
24
18
—
—
29
26
20
—
- 32
- 10
- 27
dB
dBc
—
—
dB
%
IRL
IMD
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 80 mA, I
DQ2
= 200 mA, I
DQ3
= 300 mA,
1805 MHz<Frequency<1990 MHz, 1 - Tone
Saturated Pulsed Output Power
(f = 1 kHz, Duty Cycle 10%)
Quiescent Current Accuracy over Temperature ( - 10 to 85°C)
(2)
Gain Flatness in 30 MHz Bandwidth @ P
out
= 1 W CW
Deviation from Linear Phase in 30 MHz Bandwidth @ P
out
= 1 W CW
1805- 1880 MHz
1930- 1990 MHz
Delay @ P
out
= 1 W CW Including Output Matching
Part - to - Part Phase Variation @ P
out
= 1 W CW
P
sat
ΔI
QT
G
F
Φ
—
—
—
—
±0.5
±0.2
—
—
1.8
±10
—
—
33
±5
0.15
—
—
—
—
W
%
dB
°
Delay
ΦΔ
ns
°
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family.
Go to http://www.freescale.com/rf. Select
Documentation/Application Notes - AN1977.
(continued)
MW4IC2020MBR1 MW4IC2020GMBR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical CDMA Performances
(In Modified CDMA Test Fixture, 50 ohm system) V
DD
= 26 Vdc,
DQ1
= 80 mA, I
DQ2
= 240 mA, I
DQ3
= 250 mA,
P
out
= 1 W Avg., I1930 MHz<Frequency<1990 MHz, 1 - Tone, 9 Channel Forward Model (Pilot, Paging, Sync, Traffic Codes 8 through 13).
Peak/Avg. Ratio 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio (±885 kHz in 30 kHz Bandwidth)
Alternate 1 Channel Power Ratio (±1.25 MHz in 12.5 kHz Bandwidth)
Alternate 2 Channel Power Ratio (±2.25 MHz in 1 MHz Bandwidth)
G
ps
η
D
ACPR
ALT1
ALT2
—
—
—
—
—
30
5
- 61
- 69
- 59
—
—
—
—
—
dB
%
dBc
dBc
dBc
Typical GSM EDGE Performances
(In Modified GSM EDGE Test Fixture, 50 ohm system) V
DD
= 26 Vdc, I
DQ1
= 80 mA,
I
DQ2
= 230 mA, I
DQ3
= 230 mA, P
out
= 5 W Avg., 1805 MHz<Frequency<1990 MHz
Power Gain
ARCHIVE INFORMATION
Drain Efficiency
Error Vector Magnitude
Spectral Regrowth at 400 kHz Offset
Spectral Regrowth at 600 kHz Offset
η
D
EVM
SR1
SR2
—
—
—
—
15
1
- 66
- 77
—
—
—
—
%
% rms
dBc
dBc
MW4IC2020MBR1 MW4IC2020GMBR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
G
ps
—
29
—
dB
V
D2
+
V
D1
+
C1
RF
INPUT
Z1
C7
V
G1
V
G2
V
G3
R1
R2
C4
R3
C6
Z2
6
C10
7 NC
8
9
10
11
Quiescent Current
Temperature Compensation
C11
C12
C2
C5
1
2
3 NC
4 NC
5
DUT
16
NC 15
C8
Z9
+
C3
V
D3
14
Z3
C9
Z4
Z5
Z6
Z7
C13 C14
Z8
RF
OUTPUT
NC 13
12
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
1.820″ x 0.087″ Microstrip
0.245″ x 0.087″ Microstrip
0.345″ x 0.236″ Microstrip
0.327″ x 0.087″ Microstrip
0.271″ x 0.087″ Microstrip
Z6
Z7
Z8
Z9
PCB
0.303″ x 0.087″ Microstrip
0.640″ x 0.087″ Microstrip
0.334″ x 0.087″ Microstrip
1.231″ x 0.043″ Microstrip
Taconic TLX8 - 0300, 0.030″,
ε
r
= 2.55
Figure 3. MW4IC2020MBR1(GMBR1) Test Circuit Schematic
Table 6. MW4IC2020MBR1(GMBR1) Test Circuit Component Designations and Values
Part
C1, C2, C3
C4
C5, C6, C8
C7
C9, C11
C10
C12
C13
C14
R1, R2, R3
Description
10
μF,
35 V Tantalum Capacitors
220 nF Chip Capacitor (1206)
6.8 pF 100B Chip Capacitors
0.5 pF 100B Chip Capacitor
1.8 pF 100B Chip Capacitors
2.2 pF 100B Chip Capacitor
1 pF 100B Chip Capacitor
0.3 pF 100B Chip Capacitor
10 pF 100B Chip Capacitor
1.8 kW Chip Resistors (1206)
Part Number
TAJE226M035
12065C224K28
100B6R8CW
100B0R5BW
100B1R8BW
100B2R2BW
100B1R0BW
100B0R3BW
100B100GW
Manufacturer
AVX
AVX
ATC
ATC
ATC
ATC
ATC
ATC
ATC
MW4IC2020MBR1 MW4IC2020GMBR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
C2
V
D2
V
D1
MW4IC2020
Rev 1
C3
C8
C5
V
D3
C1
C6
C14
C7
C9
C10
C4
V
G1
R1
R2
V
G2
C11 C12
C13
ARCHIVE INFORMATION
V
G3
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW4IC2020MBR1(GMBR1) Test Circuit Component Layout
MW4IC2020MBR1 MW4IC2020GMBR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
R3
GND
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
