Bulletin I27282 11/06
GB35XF120K
IGBT SIXPACK MODULE
Features
• Low VCE (on) Non Punch Through IGBT Technology
• Low Diode VF
• 10μs Short Circuit Capability
• Square RBSOA
• HEXFRED Antiparallel Diode with Ultrasoft
Reverse Recovery Characteristics
• Positive V
CE
(on) Temperature Coefficient
• Ceramic DBC Substrate
• Low Stray Inductance Design
• TOTALLY LEAD-FREE
V
CES
= 1200V
I
C
=35A @ T
C
=80°C
t
sc
> 10μs @ T
J
=150°C
ECONO2 6PACK
V
CE(on)
typ. = 2.40V
Benefits
•
•
•
•
•
•
•
Benchmark Efficiency for Motor Control
Rugged Transient Performance
Low EMI, Requires Less Snubbing
Direct Mounting to Heatsink
PCB Solderable Terminals
Low Junction to Case Thermal Resistance
UL Approved E78996
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ Tc=25°C
I
C
@ Tc=80°C
I
CM
I
LM
I
F
@ Tc=25°C
I
F
@ Tc=80°C
I
FM
V
GE
P
D
@ Tc=25°C
P
D
@ Tc=80°C
T
J
T
STG
V
ISOL
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current (Ref. Fig. C.T.5)
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Continuous Forward Current
Pulsed Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (IGBT and Diode)
Maximum Power Dissipation (IGBT and Diode)
Maximum Operating Junction Temperature
Storage Temperature Range
Isolation Voltage
Max.
1200
50
35
100
100
50
35
100
±20
284
159
150
-40 to +125
AC 2500 (MIN)
Units
V
A
V
W
°C
V
Thermal and Mechanical Characteristics
Parameter
R
θJC
(IGBT)
R
θJC
(Diode)
R
θCS
(Module)
Junction-to-Case IGBT
Junction-to-Case Diode
Case-to-Sink, flat, greased surface
Mounting Torque (M5)
Weight
Min
-
-
-
2.7
-
Typical
-
-
0.05
-
170
Maximum
0.44
0.80
-
3.3
-
Units
°C/W
N*m
g
Document Number: 93651
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1
GB35XF120K
Bulletin I27282 11/06
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
BV
(CES)
ΔV
(BR)CES
/ΔT
J
V
CE(ON)
Parameter
Collector-to-Emitter Breakdown Voltage
Temp. Coefficient of Breakdown Voltage
Collector-to-Emitter Voltage
Min. Typ. Max. Units Conditions
1200 -
-
V
V
GE
= 0 IC = 500μA
-
-
-
-
-
V
GE
(th)
ΔV
GE
(th)/ΔT
J
I
CES
V
FM
Gate Threshold Voltage
Thresold Voltage temp. coefficient
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
4.0
-
-
-
-
-
-
-
I
GES
Gate-to-Emitter Leakage Current
-
0.7
-
V/°C
V
V
GE
= 0 IC = 1mA (25°C - 125°C)
I
C
= 35A V
GE
= 15V
I
C
= 50A V
GE
= 15V
I
C
= 35A V
GE
= 15V T
J
= 125°C
I
C
=50A V
GE
= 15V T
J
= 125°C
V
CE
= V
GE
IC = 250μA
mV/°C V
CE
= V
GE
IC = 1mA (25°C-125°C)
μA
V
V
GE
= 0 V
CE =
1200V
V
GE
= 0 V
CE =
1200V Tj = 125°C
I
F
= 35A
I
F
= 50A
I
F
= 35A Tj = 125°C
I
F
= 50A Tj = 125°C
nA
V
GE
= ±20V
2.40 2.60
2.75 3.00
2.80
3.30
5.25
-11
-
500
-
-
6.0
-
100
-
1.90 2.35
2.15 2.65
2.00
2.35
-
-
-
±200
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
G
Q
GE
Q
GC
E
ON
E
OFF
E
TOT
E
ON
E
OFF
E
TOT
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
SCSOA
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Min. Typ. Max. Units Conditions
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
255
25
125
385
40
90
μJ
nC
I
C
= 35A
V
CC
= 600A
V
GE
= 15V
I
C
= 35A V
CC
= 600V
V
GE
= 15V R
G
= 10Ω L = 400μH
Tj = 25°C
μJ
I
C
= 35A V
CC
= 600V
V
GE
= 15V R
G
= 10Ω L =400μH
Tj = 125°C
ns
I
C
= 35A V
CC
= 600V
V
GE
= 15V R
G
= 10Ω L = 400μH
Tj = 125°C
pF
V
GE
= 0
V
CC
= 30V
f = 1Mhz
Tj = 150°C I
C
= 100A
R
G
= 10Ω V
GE
= 15V to 0
10
-
-
μs
Tj = 150°C
V
CC
= 900V V
P
= 1200V
R
G
= 10Ω
I
rr
Diode Peak Rev. Recovery Current
-
73
-
A
Tj = 125°C
V
CC
= 600V I
F
= 35A L =400μH
V
GE
= 15V R
G
= 10Ω
Energy losses include "tail" and diode reverse recovery.
2700 4075
2500 3775
5200 7850
3750 5450
3675 5100
7425 10550
50
35
415
230
3475
615
90
65
50
560
300
-
-
-
FULL SQUARE
V
GE
= 15V to 0
Document Number: 93651
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2
GB35XF120K
Bulletin I27282 11/06
70
60
50
ICE (A)
70
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
60
50
40
30
20
10
0
40
30
20
10
0
0
1
2
3
VCE (V)
4
5
6
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
1
2
3
VCE (V)
4
5
6
Fig. 1
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 80μs
20
18
16
14
VCE (V)
VCE (V)
Fig. 2
- Typ. IGBT Output Characteristics
T
J
= 125°C; tp = 80μs
20
18
16
14
12
10
8
6
4
2
0
5
10
VGE (V)
ICE = 17.5A
ICE = 35A
ICE = 70A
12
10
8
6
4
2
0
ICE = 17.5A
ICE = 35A
ICE = 70A
15
20
5
10
VGE (V)
15
20
Fig. 3
- Typical V
CE
vs. V
GE
T
J
= 25°C
8000
7000
6000
Energy (µJ)
1000
Fig. 4
- Typical V
CE
vs. V
GE
T
J
= 125°C
EON
tdOFF
Swiching Time (ns)
tF
5000
4000
3000
2000
1000
0
0
20
40
IC (A)
EOFF
100
tdON
tR
10
60
80
0
20
40
60
80
IC (A)
Fig. 5
- Typ. Energy Loss vs. I
C
T
J
= 125°C; L=400μH; V
CE
= 600V
R
G
= 10Ω; V
GE
= 15V
Document Number: 93651
Fig. 6
- Typ. Switching Time vs. I
C
T
J
= 125°C; L=400μH; V
CE
= 600V
R
G
= 10Ω; V
GE
= 15V
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3
GB35XF120K
Bulletin I27282 11/06
7000
6000
5000
10000
EON
Swiching Time (ns)
1000
Energy (µJ)
4000
3000
2000
1000
0
0
10
20
30
EOFF
td OFF
tF
100
td ON
tR
10
40
50
0
10
20
30
40
50
Fig. 7
- Typ. Energy Loss vs. R
G
T
J
= 125°C; L=400μH; V
CE
= 600V
I
CE
= 35A; V
GE
= 15V
10000
RG (
Ω
)
Fig. 8
- Typ. Switching Time vs. R
G
T
J
= 125°C; L=400μH; V
CE
= 600V
I
CE
= 35A; V
GE
= 15V
16
R G (
Ω
)
Cies
14
12
400V
600V
Capacitance (pF)
1000
VGE (V)
Coes
10
8
6
4
2
100
Cres
10
0
20
40
60
80
100
0
0
50
100
150
200
250
300
VCE (V)
Q G , Total Gate Charge (nC)
Fig. 9-
Typ. Capacitance vs. V
CE
V
GE
= 0V; f = 1MHz
60
Fig. 10
- Typical Gate Charge vs. V
GE
I
CE
= 35A; L = 600µH
40
IC (A)
20
0
0
20
40
60
80
100 120 140 160
T C (°C)
Fig. 11
- Maximum DC Collector Current vs.
Case Temperature
Document Number: 93651
Fig. 12
- Power Dissipation vs. Case
Temperature
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GB35XF120K
Bulletin I27282 11/06
1000
1000
100
20 µs
IC (A)
100
10
100 µs
1 ms
10 ms
DC
IC (A)
10
1
1
0.1
1
10
100
VCE (V)
1000
10000
10
100
1000
10000
Fig. 13
- Forward SOA
T
C
= 25°C; T
J
≤
150°C
400
350
300
250
ICE (A)
Fig. 14
- Reverse Bias SOA
T
J
= 150°C; V
GE
=15V
70
VCE (V)
T J = 25°C
T J = 125°C
60
50
IF (A)
25°C
125°C
40
30
20
10
0
200
150
100
50
0
0
5
10
VGE (V)
15
20
0.0
1.0
2.0
V F (V)
3.0
4.0
Fig. 15
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 10µs
100
90
80
70
Fig. 16
- Typ. Diode Forward Characteristics
tp = 80µs
90
80
70
60
RG = 4.7
Ω
RG = 10
Ω
IRR (A)
IRR (A)
80
60
50
40
30
20
10
0
0
20
40
RG = 22
Ω
50
40
30
20
10
0
RG = 47
Ω
60
0
10
20
30
40
50
Fig. 17
- Typical Diode I
RR
vs. I
F
T
J
= 125°C
Document Number: 93651
IF (A)
Fig. 18
- Typical Diode I
RR
vs. R
G
T
J
= 125°C, I
F
= 35A
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RG (
Ω)
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