Freescale Semiconductor
Technical Data
Document Number: MHVIC910HNR2
Rev. 9, 5/2006
LIFETIME BUY
The MHVIC910HNR2 integrated circuit is designed for GSM base stations,
uses Freescale’s newest High Voltage (26 Volts) LDMOS IC technology, and
contains a three--stage amplifier. Target applications include macrocell (driver
function) and microcell base stations (final stage). The device is in a PFP--16
Power Flat Pack package which gives excellent thermal performances through
a solderable backside contact.
•
Typical GSM Performance: V
DD
= 26 Volts, I
DQ
= 150 mA, P
out
= 10 Watts,
Full Frequency Band (921--960 MHz)
Power Gain — 39 dB (Typ)
Power Added Efficiency — 48% (Typ)
•
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 10 Watts CW
Output Power
•
Stable into a 10:1 VSWR. All Spurs Below --60 dBc @ 0 to 40 dBm CW
P
out
.
Features
•
On--Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
•
Integrated ESD Protection
•
Usable Frequency Range — 921 to 960 MHz
•
RoHS Compliant
•
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
V
DD
V
GS
P
in
T
C
T
stg
T
ch
MHVIC910HNR2
960 MHz, 10 W, 26 V
GSM CELLULAR
RF LDMOS INTEGRATED CIRCUIT
16
1
CASE 978-
-03
PFP-
-16
Value
28
6
5
-- 30 to + 85
-- 65 to + 150
150
Unit
Vdc
Vdc
dBm
°C
°C
°C
Drain Supply Voltage
Gate Supply Voltage
RF Input Power
Case Operating Temperature
Storage Temperature Range
Operating Channel Temperature
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
2.9
Unit
°C/W
V
D1
V
D2
V
D3
N.C.
V
D2
V
D1
GND
1
2
3
4
5
6
7
8
(Top View)
16
N.C.
15 V
D3
/RF
out
14 V
D3
/RF
out
13 V
D3
/RF
out
12 V
D3
/RF
out
11 V
D3
/RF
out
10 N.C.
9 N.C.
RF
in
RF
out
RF
in
V
GATE1
V
GATE2
V
GATE3
V
GATE1
V
GATE2
V
GATE3
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MHVIC910HNR2
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
921 MHz-
-960 MHz SiFET
RF Integrated Power Amplifier
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Class
0 (Minimum)
M2 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22--A113, IPC/JEDEC J--STD--020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Recommended Operating Ranges
Parameter
Drain Supply Voltage
3rd Stage Quiescent Current
2nd Stage Quiescent Current
1st Stage Quiescent Current
Symbol
V
DD
I
DQ3
I
DQ2
I
DQ1
Value
26
150
50
25
Unit
Vdc
mA
mA
mA
LIFETIME BUY
Table 6. Electrical Characteristics
(T
A
= 25°C matched to a 50
Ω
system, unless otherwise noted)
V
DD
= 26 V, V
GS
set for I
DQ3
= 150 mA, frequency range 921--960 MHz
Characteristic
Frequency Range
Output Power @ 1 dB Compression Point
Power Gain @ P1dB
Power Added Efficiency @ 1 dB Compression Point
Input Return Loss @ P1dB
Gain Flatness @ 40 dBm
Variation (T
C
= --30 to +85°C @ 40 dBm)
Symbol
f
RF
P @ 1dB
G @ 1dB
PAE @ 1dB
IRL @ 1dB
G
F
G
V
Min
921
39
38
43
—
—
—
Typ
—
40
39
48
--15
.5
5
Max
960
—
—
—
--10
—
—
Unit
MHz
dBm
dB
%
dB
dB
dB
MHVIC910HNR2
2
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
1
V
D2
C2
3
C3
RF
INPUT
4
16
V
D1
14
C7
13
C8
V
D3
RF
OUTPUT
C6
C9
5
6
C4
R1
7
C5
8
R2
C1
12
11
R3
V
GS
10
9
C1, C2, C3, C4, C5, C8
C6
C7
C9
1
μF
Surface Mount Chip Capacitors
4.7 pF AVX Chip Capacitor, ACCU--P (08051J4R7BBT)
47 pF AVX Chip Capacitor, ACCU--P (08055K470JBTTR)
33 pF AVX Chip Capacitor, ACCU--P (08053J330JBT)
J1, J2
J3, J4
R1, R2, R3
PCB
Header (Break--away), HDR2X10STIMCSAFU
SMA Connector 2052--1618--02 (Threaded)
100
Ω
Chip Resistors (0402)
Rogers 04350, 20 mils
Figure 3. 921-
-960 MHz Demo Board Schematic
MHVIC910HNR2
RF Device Data
Freescale Semiconductor
3
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
2
15
LIFETIME BUY
C8
C2
C3
C7
RF Input
C6
C9
RF Output
C4
C5
C1
R3
R1
V
G1
R2
V
G2
V
G3
MHVIC910HR2
900 MHz
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/-
logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact
on form, fit or function of the current product.
Figure 4. 921-
-960 MHz Demo Board Component Layout
MHVIC910HNR2
4
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
V
D1
V
D2
V
D3
LIFETIME BUY
TYPICAL CHARACTERISTICS
43
42
G ps, POWER GAIN (dB)
41
40
39
38
37
36
35
0
2
4
6
8
10
12
P
out
, OUTPUT POWER (WATTS)
T
C
= +85°C, I
DQ3
= 150 mA
PAE, POWER ADDED EFFICIENCY (%)
T
C
= --30°C, I
DQ3
= 150 mA
T
C
= +25°C, I
DQ3
= 150 mA
T
C
= +25°C, I
DQ3
= 120 mA
T
C
= +25°C, I
DQ3
= 110 mA
50
T
C
= --30°C
+85°C
+25°C
40
35
30
25
20
15
10
0
2
4
6
8
I
DQ3
= 150 mA
f = 960 MHz
10
12
P
out
, OUTPUT POWER (WATTS)
Figure 5. Power Gain versus
Output Power
100
43
42
Gps , POWER GAIN (dB)
41
40
39
38
37
36
5
910
Figure 6. Power Added Efficiency
versus Output Power
T
C
= --30°C, I
DQ3
= 150 mA
+25°C
10
T
C
= --30°C
+85°C
I
DQ3
= 150 mA
f = 960 MHz
--13
--11
--9
--7
--5
--3
--1
1
3
T
C
= +25°C, I
DQ3
= 150 mA
T
C
= +25°C, I
DQ3
= 120 mA
T
C
= +85°C, I
DQ3
= 150 mA
1
--15
920
930
940
950
960
970
P
in
, INPUT POWER (dBm)
f, FREQUENCY (MHz)
Figure 7. Output Power versus Input Power
43
42
T
C
= --30°C, I
DQ3
= 150 mA
PAE, POWER ADDED EFFICIENCY (%)
48
47.5
47
46.5
46
45.5
45
44.5
44
43.5
43
910
920
930
940
950
960
970
910
Figure 8. Power Gain versus Frequency
P
out
= 10 W
Gps , POWER GAIN (dB)
41
40
39
38
37
36
f, FREQUENCY (MHz)
T
C
= +25°C, I
DQ3
= 150 mA
T
C
= +25°C, I
DQ3
= 120 mA
T
C
= +25°C, I
DQ3
= 110 mA
T
C
= +85°C, I
DQ3
= 150 mA
T
C
= +25°C, I
DQ3
= 120 mA
T
C
= +25°C, I
DQ3
= 150 mA
f = 960 MHz
920
930
940
950
960
970
f, FREQUENCY (MHz)
Figure 9. Power Gain versus Frequency
P
out
= P1dB
Figure 10. Power Added Efficiency versus Frequency
P
out
= 10 W
MHVIC910HNR2
RF Device Data
Freescale Semiconductor
5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
45
LIFETIME BUY
Pout , OUTPUT POWER (WATTS)
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