GB15RF60K
Vishay High Power Products
IGBT PIM Module, 17 A
FEATURES
•
•
•
•
•
•
•
•
•
•
•
Low V
CE(on)
non punch through IGBT technology
Low diode V
F
10 µs short circuit capability
Square RBSOA
HEXFRED
®
antiparallel diode with ultrasoft
reverse recovery characteristics
Positive V
CE(on)
temperature coefficient
Ceramic DBC substrate
Low stray inductance design
Speed 8 to 60 kHz
Totally lead (Pb)-free
Designed and qualified for industrial market
RoHS
COMPLIANT
ECONO2 PIM
PRODUCT SUMMARY
V
CES
V
CE(on)
(typical)
t
sc
at T
J
= 150 °C
I
C
at T
C
= 80 °C
600 V
1.87 V
> 10 µs
17 A
BENEFITS
•
•
•
•
•
•
•
Benchmark efficiency for motor control
Rugged transient performance
Low EMI, requires less snubbing
Direct mounting to heatsink
PCB solderable terminals
Low junction to case thermal resistance
UL approved E78996
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector to emitter voltage
Gate to emitter voltage
Continuous collector current
Inverter
Pulsed collector current
See fig. C.T.5
Diode maximum forward current
Power dissipation
Repetitive peak reverse voltage
Input
rectifier
Average output current
Surge current (non-repetitive)
I
2
t (non-repetitive)
Collector to emitter voltage
Gate to emitter voltage
Continuous collector current
Pulsed collector current
See fig. C.T.5
Power dissipation
Repetitive peak reverse voltage
Maximum operating junction temperature
Storage temperature range
Isolation voltage
I
CM
I
FM
P
D
V
RRM
I
F(AV)
I
FSM
I
2
t
V
CES
V
GES
I
C
I
CM
P
D
V
RRM
T
J
T
Stg
V
ISOL
AC (1 min)
One IGBT
25 °C
T
C
= 25 °C
T
C
= 80 °C
50/60 Hz sine pulse
80 °C
Pulsed
One IGBT
25 °C
SYMBOL
V
CES
V
GES
I
C
T
C
= 25 °C
T
C
= 80 °C
TEST CONDITIONS
MAX.
600
± 20
25
17
50
50
100
800
15
310
525
600
± 20
15
9
30
100
600
150
- 40 to + 125
2500
UNITS
V
A
A
A
W
V
A
A
2
s
V
A
A
W
V
°C
V
Rated V
RRM
applied, 10 ms,
sine pulse
Brake
Document Number: 94477
Revision: 10-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
GB15RF60K
Vishay High Power Products
IGBT PIM Module, 17 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Collector to emitter breakdown voltage
Temperature coefficient of
breakdown voltage
SYMBOL
BV
(CES)
ΔV
(BR)CES
/ΔT
J
TEST CONDITIONS
V
GE
= 0 V, I
C
= 500 µA
V
GE
= 0 V, I
C
= 1 mA
(25 °C to 125 °C)
I
C
= 15 A, V
GE
= 15 V
Collector to emitter voltage
V
CE(on)
I
C
= 25 A, V
GE
= 15 V
I
C
= 15 A, V
GE
= 15 V, T
J
= 125 °C
I
C
= 25 A, V
GE
= 15 V, T
J
= 125 °C
Gate threshold voltage
Threshold voltage temperature
coefficient
Zero gate voltage collector current
Gate to emitter leakage current
Total gate charge (turn-on)
Inverter
IGBT
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Reverse bias safe operating area
Inverter
IGBT
Short circuit safe operating area
SCSOA
V
GE(th)
ΔV
GE(th)
/ΔT
J
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= V
GE
, I
C
= 1 mA
(25 °C to 125 °C)
V
GE
= 0 V, V
CE
= 600 V
I
CES
I
GES
Q
G
Q
GE
Q
GC
E
on
E
off
E
tot
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
T
J
= 125 °C, I
C
= 50 A
R
G
= 22
Ω,
V
GE
= 15 V to 0
T
J
= 150 °C
V
CC
= 300 V, V
P
= 600 V
R
G
= 22
Ω,
V
GE
= 15 V to 0 V
T
J
= 125 °C
V
CC
= 300 V, I
F
= 15 A, L = 200 µH
R
G
= 22
Ω,
V
GE
= 15 V
I
F
= 15 A
Diode forward voltage drop
V
FM
I
F
= 25 A
I
F
= 15 A, T
J
= 125 °C
I
F
= 25 A, T
J
= 125 °C
10
I
C
= 15 A, V
CC
= 300 V
V
GE
= 15 V, R
G
= 22
Ω
L = 200 µH, T
J
= 125 °C
V
GE
= 0 V, V
CE
= 600 V
T
J
= 125 °C
V
GE
= ± 20 V
I
C
= 15 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 15 A, V
CC
= 300 V
V
GE
= 15 V, R
G
= 22
Ω
L = 200 µH, T
J
= 25 °C
(1)
I
C
= 15 A, V
CC
= 300 V
V
GE
= 15 V, R
G
= 22
Ω
L = 200 µH, T
J
= 125 °C
(1)
MIN.
600
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
0.6
1.87
2.33
2.16
2.78
-
- 10
-
250
-
53
14
18
0.27
0.15
0.42
0.36
0.25
0.61
87
22
112
119
901
263
29
Fullsquare
MAX.
-
-
2.20
2.75
2.42
3.17
6
-
100
µA
-
± 200
80
21
27
0.41
0.23
0.64
mJ
0.54
0.38
0.92
131
33
ns
168
179
1352
395
44
pF
nC
nA
mV/°C
V
UNITS
V
V/°C
-
-
µs
Diode peak reverse recovery current
Inverter
Diode
I
rr
-
-
-
-
-
30
1.22
1.36
1.17
1.34
-
1.38
1.61
A
V
1.37
1.65
www.vishay.com
2
For technical questions, contact: ind-modules@vishay.com
Document Number: 94477
Revision: 10-Sep-08
GB15RF60K
IGBT PIM Module, 17 A
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Maximum forward voltage drop
Input
Rectifier
Maximum reverse leakage current
Forward slope resistance
Conduction thresold voltage
Collector to emitter breakdown voltage
Temperature coefficient of
breakdown voltage
SYMBOL
V
FM
I
RM
r
T
V
F (TO)
BV
(CES)
ΔV
(BR)CES
/ΔT
J
TEST CONDITIONS
I
F
= 15 A
T
J
= 25 °C, V
R
= 800 V
T
J
= 150 °C, V
R
= 800 V
T
J
= 150 °C
V
GE
= 0 V, I
C
= 500 µA
V
GE
= 0 V, I
C
= 1 mA
(25 °C to 125 °C)
I
C
= 10 A, V
GE
= 15 V
Collector to emitter voltage
V
CE(on)
I
C
= 15 A, V
GE
= 15 V
I
C
= 10 A, V
GE
= 15 V, T
J
= 125 °C
I
C
= 15 A, V
GE
= 15 V, T
J
= 125 °C
Gate threshold voltage
Threshold voltage temperature
coefficient
Zero gate voltage collector current
Gate to emitter leakage current
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Brake
IGBT
Reverse bias safe operating area
V
GE(th)
ΔV
GE(th)
/ΔT
J
V
CE
= V
GE
, I
C
= 250 µA
V
CE
= V
GE
, I
C
= 1 mA
(25 °C to 125 °C)
V
GE
= 0 V, V
CE
= 600 V
I
CES
I
GES
Q
G
Q
GE
Q
GC
E
on
E
off
E
tot
E
on
E
off
E
tot
t
d(on)
t
r
t
d(off)
t
f
C
ies
C
oes
C
res
RBSOA
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
T
J
= 150 °C, I
C
= 30 A
R
G
= 22
Ω,
V
GE
= 15 V to 0
T
J
= 150 °C
V
CC
= 300 V, V
P
= 600 V
R
G
= 22
Ω,
V
GE
= 15 V to 0
10
I
C
= 10 A, V
CC
= 300 V
V
GE
= 15 V, R
G
= 22
Ω
L = 500 µH, T
J
= 125 °C
V
GE
= 0 V, V
CE
= 600 V
T
J
= 125 °C
V
GE
= ± 20 V
I
C
= 10 A
V
CC
= 300 V
V
GE
= 15 V
I
C
= 10 A, V
CC
= 300 V
V
GE
= 15 V, R
G
= 22
Ω
L = 500 µH, T
J
= 25 °C
(1)
I
C
= 10 A, V
CC
= 300 V
V
GE
= 15 V, R
G
= 22
Ω
L = 500 µH, T
J
= 125 °C
(1)
MIN.
-
-
-
-
-
600
-
-
-
-
-
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
-
-
-
10.2
0.74
-
0.6
1.69
1.86
1.84
2.15
-
- 10
-
200
-
53
12
18
0.14
0.11
0.25
0.18
0.20
0.38
86
17
117
152
901
263
29
Fullsquare
MAX.
1.15
0.2
mA
1
-
-
V
-
-
2.00
2.19
2.19
2.45
6
-
100
µA
-
± 200
80
18
27
0.21
0.16
0.37
mJ
0.26
0.30
0.56
130
26
ns
176
228
1352
395
44
pF
nC
nA
mV/°C
V
V/°C
mΩ
UNITS
V
Brake
IGBT
Short circuit safe operating area
SCSOA
-
-
µs
Document Number: 94477
Revision: 10-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
GB15RF60K
Vishay High Power Products
IGBT PIM Module, 17 A
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise noted)
PARAMETER
Diode peak reverse recovery current
Brake
Diode
SYMBOL
I
rr
TEST CONDITIONS
V
CC
= 300 V, I
F
= 10 A, L = 500 µH
V
GE
= 15 V to 0, R
G
= 22
Ω
I
F
= 10 A
Diode forward voltage drop
V
FM
I
F
= 15 A
I
F
= 10 A, T
J
= 125 °C
I
F
= 15 A, T
J
= 125 °C
NTC
Resistance
B value
Note
(1)
Energy losses include “tail” and diode reverse recovery
R
B
T
J
= 25 °C
T
J
= 100 °C
T
J
= 25 °C/50 °C
MIN.
-
-
-
-
-
-
-
-
TYP.
-
1.34
1.46
1.28
1.43
5000
4933
3375
MAX.
-
1.43
1.75
1.39
1.59
-
-
-
Ω
K
V
UNITS
A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Junction to case inverter IGBT thermal resistance
Junction to case inverter FRED thermal resistance
Junction to case brake DIODE thermal resistance
Junction to case brake IGBT thermal resistance
Junction to case input rectifier thermal resistance
Case to sink, flat, greased surface
Mounting torque (M5)
Weight
R
thCS
R
thJC
SYMBOL
MIN.
-
-
-
-
-
-
2.7
-
TYP.
-
-
-
-
-
0.05
-
170
MAX.
1.25
2.13
2.44
1.25
1.03
-
3.3
-
Nm
g
°C/W
UNITS
www.vishay.com
4
For technical questions, contact: ind-modules@vishay.com
Document Number: 94477
Revision: 10-Sep-08
GB15RF60K
IGBT PIM Module, 17 A
INVERTER
45
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
Vishay High Power Products
20
15
Vce (V)
I
ce=7.5A
I
ce=15A
I
ce=30A
Ice (A)
30
10
15
5
0
0
1
2
Vce (V)
3
4
0
5
10
Vge (V)
15
20
Fig. 1 - Typical IGBT Output Characteristics
T
J
= 25 °C; t
p
= 80 µs
Fig. 4 - Typical V
CE
vs. V
GE
T
J
= 25 °C
45
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
20
16
12
8
4
Ice (A)
30
I
ce=7.5A
I
ce=15A
I
ce=30A
15
0
0
2
Vce (V)
4
6
Fig. 2 - Typical IGBT Output Characteristics
T
J
= 125 °C, t
p
= 80 µs
Vce (V)
0
5
10
Vge (V)
15
20
Fig. 5 - Typical V
CE
vs. V
GE
T
J
= 125 °C
100
Tj = 25°C
Tj = 125°C
10000
Capacitance (pF)
75
Ice (A)
Cies
1000
Coes
100
Cres
50
25
0
0
5
Vge (V)
Fig. 3 - Typical Transfer Characteristics
V
CE
= 50 V; t
p
= 10 µs
10
10
15
0
25
50
Vce (V)
75
100
Fig. 6 - Typical Capacitance vs. V
CE
V
GE
= 0 V; f = 1 MHz
Document Number: 94477
Revision: 10-Sep-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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