Freescale Semiconductor
Technical Data
Document Number: MW6IC2420N
Rev. 3, 12/2010
The MW6IC2420NB integrated circuit is designed with on--chip matching
that makes it usable at 2450 MHz. This multi--stage structure is rated for 26 to
32 Volt operation and covers all typical industrial, scientific and medical
modulation formats.
Driver Applications
•
Typical CW Performance at 2450 MHz: V
DD
= 28 Volts, I
DQ1
= 210 mA,
I
DQ2
= 370 mA, P
out
= 20 Watts
Power Gain — 19.5 dB
Power Added Efficiency — 27%
•
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 20 Watts CW
Output Power
•
Stable into a 3:1 VSWR. All Spurs Below --60 dBc @ 100 mW to 10 Watts
CW P
out
.
Features
•
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source Scattering Parameters
•
On--Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
225°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel
MW6IC2420NBR1
2450 MHz, 20 W, 28 V
CW
RF LDMOS INTEGRATED POWER
AMPLIFIER
CASE 1329-
-09
TO-
-272 WB-
-16
PLASTIC
V
DS1
RF
in
RF
out
/V
DS2
GND
V
DS1
NC
NC
NC
RF
in
NC
V
GS1
V
GS2
V
DS1
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
RF
out
/
V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
13
12
NC
GND
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2007--2010. All rights reserved.
MW6IC2420NBR1
1
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
RF LDMOS Integrated
Power Amplifier
LIFETIME BUY
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Input Power
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
P
in
Value
--0.5, +68
--0.5, +6
--65 to +150
150
225
23
Unit
Vdc
Vdc
°C
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
W--CDMA Application
(P
out
= 4.5 W Avg.)
Stage 1, 28 Vdc, I
DQ
= 210 mA
Stage 2, 28 Vdc, I
DQ
= 370 mA
Symbol
R
θJC
1.8
1
Value
(2,3)
Unit
°C/W
LIFETIME BUY
Table 3. ESD Protection Characteristics
Test Methodology
Class
1A (Minimum)
A (Minimum)
III (Minimum)
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
3
Package Peak
Temperature
260
Unit
°C
Per JESD 22--A113, IPC/JEDEC J--STD--020
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Wideband 2110--2170 MHz Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 210 mA, I
DQ2
= 370 mA,
P
out
= 4.5 W Avg., f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in
3.84 MHz Channel Bandwidth @
±5
MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @
±10
MHz Offset. Input Signal
PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Power Added Efficiency
Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
G
ps
PAE
IM3
ACPR
IRL
25.5
13.7
—
—
—
28
15
--43
--46
--15
30
—
--40
--43
--10
dB
%
dBc
dBc
dB
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
MW6IC2420NBR1
2
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
Table 5. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
(continued)
Characteristic
Video Bandwidth @ 20 W PEP P
out
where IM3 = --30 dBc
(Tone Spacing from 100 kHz to VBW)
∆IMD3
= IMD3 @ VBW frequency -- IMD3 @ 100 kHz <1 dBc (both
sidebands)
Quiescent Current Accuracy over Temperature
with 18 kΩ Gate Feed Resistors (--10 to 85°C)
(1)
Gain Flatness in 30 MHz Bandwidth @ P
out
= 1 W CW
Average Deviation from Linear Phase in 30 MHz Bandwidth
@ P
out
= 1 W CW
Average Group Delay @ P
out
= 1 W CW Including Output Matching
Part--to--Part Insertion Phase Variation @ P
out
= 1 W CW,
Six Sigma Window
Symbol
VBW
—
30
—
Min
Typ
Max
Unit
MHz
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 210 mA, I
DQ2
= 370 mA, 2110--2170 MHz
∆I
QT
G
F
Φ
Delay
∆Φ
—
—
—
—
—
±5
0.2
2
2.8
18
—
—
—
—
—
%
dB
°
ns
°
LIFETIME BUY
Table 6. Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
P
sat
Min
—
Typ
60
Max
—
Unit
W
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ1
= 110 mA, I
DQ2
= 370 mA, 2110--2170 MHz
Saturated Pulsed Output Power
(8
μsec(on),
1 msec(off))
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1977 or AN1987.
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
3
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
V
DS1
C1
RF
INPUT
Z1
C14
V
GS1
R1
V
GS
C3
V
GS2
R2
NC
Z1
Z2
Z3, Z8
Z4
Z5
C13
NC
C5
Z2
C15
Z3
Z10
14
Z4
Z5
C6 Z6
C7
Quiescent Current
Temperature
Compensation
Z11
NC 13
12
C4
C12
C8
Z7
Z8
C9
Z9
C10
RF
OUTPUT
6
7 NC
8
9
10
11
0.510″ x 0.054″ Microstrip
0.300″ x 0.054″ Microstrip
0.410″ x 0.054″ Microstrip
0.138″ x 0.237″ Microstrip
0.086″ x 0.237″ Microstrip
Z6
Z7
Z9
Z10, Z11
PCB
0.189″ x 0.237″ Microstrip
0.127″ x 0.054″ Microstrip
0.182″ x 0.054″ Microstrip
1.073″ x 0.054″ Microstrip
Taconic RF35, 0.020″,
ε
r
= 3.5
Figure 3. MW6IC2420NBR1 Test Circuit Schematic — 2450 MHz
Table 7. MW6IC2420NBR1 Test Circuit Component Designations and Values
Part
Description
2.2
μF
Chip Capacitors
100 nF Chip Capacitors
0.5 pF Chip Capacitors
6.8 pF Chip Capacitor
2.2 pF Chip Capacitor
1 pF Chip Capacitor
5.6 pF Chip Capacitors
0.3 pF Chip Capacitor
0.5 pF Chip Capacitor
5 kΩ Potentiometer CMS Cermet Multi--turn
Part Number
C32225X5R1H225MT
C1206C104K1KAC
08051J0R5BS
08051J6R8BS
08051J2R2BS
08051J1R0BS
08051J5R6BS
ATC100B0R3BT500XT
ATC100B0R5BT500XT
3224W--1--502E
TDK
Kemet
AVX
AVX
AVX
AVX
AVX
ATC
ATC
Bourns
Manufacturer
C1, C2, C3, C4
C5, C13
C6, C7
C8
C9
C10
C11, C12
C14
C15
R1, R2
MW6IC2420NBR1
4
RF Device Data
Freescale Semiconductor
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
1
2
3 NC
4 NC
5
DUT
16
NC 15
V
DS2
C2
C11
LIFETIME BUY
V
DS1
V
DS2
C2
MW6IC2420
Rev. 0
C1
C11
C6
C14
C5
C15
C13
C7
C8
C9
C10
C4
C12
R1
R2
C3
V
GS
Figure 4. MW6IC2420NBR1 Test Circuit Component Layout — 2450 MHz
MW6IC2420NBR1
RF Device Data
Freescale Semiconductor
5
LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12
LIFETIME BUY
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