Freescale Semiconductor
Technical Data
Document Number: MW5IC2030N
Rev. 8, 5/2006
RF LDMOS Wideband Integrated
Power Amplifiers
The MW5IC2030N wideband integrated circuit is designed with on - chip
matching that makes it usable from 1930 to 1990 MHz. This multi - stage
structure is rated for 26 to 28 Volt operation and covers all typical cellular base
station modulation formats.
Final Application
•
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 160 mA,
I
DQ2
= 230 mA, P
out
= 5 Watts Avg., Full Frequency Band, IS - 95 CDMA
(Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 23 dB
Drain Efficiency — 20%
ACPR @ 885 kHz Offset — - 49 dBc in 30 kHz Channel Bandwidth
Driver Application
•
Typical CDMA Performance: V
DD
= 27 Volts, I
DQ1
= 220 mA, I
DQ2
=
240 mA, P
out
= 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 24 dB
ACPR @ 885 kHz Offset — - 63 dBc in 30 kHz Channel Bandwidth
•
Capable of Handling 10:1 VSWR, @ 27 Vdc, 1990 MHz, 30 Watts CW
Output Power
•
Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 0 to 43 dBm CW
P
out
.
•
On - Chip Matching (50 Ohm Input, >4 Ohm Output)
•
Integrated Temperature Compensation Capability with Enable/Disable
Function
•
On - Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
V
DS1
V
RD2
V
RG2
RF
in
V
RD1
V
DS2
/RF
out
MW5IC2030NBR1
MW5IC2030GNBR1
1930 - 1990 MHz, 30 W, 26 V
GSM/GSM EDGE, W - CDMA, PHS
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09
TO - 272 WB - 16
PLASTIC
MW5IC2030NBR1
CASE 1329A - 03
TO - 272 WB - 16 GULL
PLASTIC
MW5IC2030GNBR1
GND
V
DS1
V
RD2
V
RG2
GND
RF
in
V
RD1
V
RG1
/V
GS1
V
GS2
NC
GND
1
2
3
4
5
6
7
8
9
10
11
16
15
GND
NC
14
V
DS2/
RF
out
13
12
NC
GND
V
RG1
/V
GS1
V
GS2
Quiescent Current
Temperature Compensation
(Top View)
Note: Exposed backside flag is source
terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MW5IC2030NBR1 MW5IC2030GNBR1
1
RF Device Data
Freescale Semiconductor
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Input Power
Symbol
V
DSS
V
GS
T
stg
T
J
P
in
Value
- 0.5, +65
- 0.5, +15
- 65 to +175
200
20
Unit
Vdc
Vdc
°C
°C
dBm
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
CDMA Application
(P
out
= 5 W CW)
PHS Application
(P
out
= 12.6 W CW)
Stage 1, 27 Vdc, I
DQ
= 160 mA
Stage 2, 27 Vdc, I
DQ
= 230 mA
Stage 1, 26 Vdc, I
DQ
= 300 mA
Stage 2, 26 Vdc, I
DQ
= 1300 mA
Symbol
R
θJC
4.89
1.75
4.85
1.61
Value
(1,2)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1B (Minimum)
A (Minimum)
3 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
CDMA Functional Tests
(In Freescale 1900 MHz Test Fixture, 50
οhm
system) V
DD
= 27 Vdc, I
DQ1
= 160 mA, I
DQ2
= 230 mA, P
out
=
5 W Avg., 1960 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth
@
±
885 kHz Offset. PAR = 9.8 dB @ 0.01 Probability on CCDF.
Power Gain
Drain Efficiency
Input Return Loss
Adjacent Channel Power Ratio
Gain Flatness in 30 MHz BW, 1930 - 1990 MHz
G
ps
η
D
IRL
ACPR
G
F
21.5
18
—
—
—
23
20
- 18
- 49
0.2
—
—
- 10
- 47
0.3
dB
%
dB
dBc
dB
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
(continued)
MW5IC2030NBR1 MW5IC2030GNBR1
2
RF Device Data
Freescale Semiconductor
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
Deviation from Linear Phase in 30 MHz BW
(Characterized from 1930 - 1990 MHz)
Delay
Part - to - Part Phase Variation
Part - to - Part Gain Variation (Per Lot or Reel)
Reference FET to RF FET Scaling Ratio Delta (Stages 1 and 2)
Symbol
P1dB
Φ
Delay
ΔΦ
ΔG
Min
—
—
—
—
—
—
Typ
30
±1
2.25
±10
±1.5
10
Max
—
—
—
—
—
—
Unit
W
°
ns
°
dB
%
Typical Performances
(In Freescale Test Fixture) V
DD
= 26 Vdc, I
DQ1
= 160 mA, I
DQ2
= 230 mA, P
out
= 5 W, f = 1960 MHz
Typical PHS Performances
(In Freescale Test Fixture, 50
οhm
system) V
DD
= 26 Vdc, I
DQ1
= 260 mA, I
DQ2
= 1100 mA, P
out
=
12.6 W, 1900 MHz, PHS Signal Mask
Power Gain
Drain Efficiency
Input Return Loss
Adjacent Channel Power Ratio
(600 kHz Offset in 192 kHz BW)
G
ps
η
D
IRL
ACPR
—
—
—
—
24
25
- 15
- 72
—
—
—
—
dB
%
dB
dBc
MW5IC2030NBR1 MW5IC2030GNBR1
RF Device Data
Freescale Semiconductor
3
V
D1
Z10
+
C19
C9
C6
1
16
NC 15
C5
Z8
Z3
6
7
C14
V
RG1
/V
GS1
8
9
C18
Z11
NC 10 NC
11
Quiescent Current
Temperature
Compensation
NC 13
12
Z7
14
C1
C2 C3
Z6
Z4
Z5
Z9
C8
+
V
D2
C20
RF
OUTPUT
2
3
V
RD2
C12
V
BIAS R2
R3
RF
INPUT
Z1
C7
V
RD1
R6
C13
Z2
4
5
V
BIAS1
R1
C11
R4
C15
C4
+
V
BIAS2
R2
C10
R5
C16
+
C17
Z1
Z2
Z3
Z4
Z5
Z6
0.465″
0.518″
0.282″
0.221″
0.489″
0.471″
x 0.041″ Microstrip
x 0.041″ Microstrip
x 0.235″ Microstrip
x 0.081″ Microstrip
x 0.041″ Microstrip
x 0.025″ Microstrip
Z7
Z8
Z9
Z10
Z11
PCB
0.200″ x 0.025″ Microstrip
0.274″ x 0.050″ Microstrip
0.615″ x 0.050″ Microstrip
0.450″ x 0.025″ Microstrip
0.340″ x 0.014″ Microstrip
Rogers 4350, 0.020″,
ε
r
= 3.5
Figure 3. MW5IC2030NBR1(GNBR1) Test Circuit Schematic
Table 6. MW5IC2030NBR1(GNBR1) Test Circuit Component Designations and Values
Part
C1
C2
C3
C4
C5, C6
C7
C8, C9, C10, C11
C12, C13, C14, C15, C16
C17, C18
C19, C20
R1, R3
R2
R4, R5, R6
Description
1.8 pF High Q Chip Capacitor (0603)
1.5 pF High Q Chip Capacitor (0603)
3.9 pF High Q Chip Capacitor (0603)
6.8 pF High Q Chip Capacitor (0805)
100 pF Class 1 NPO Chip Capacitors (0805)
4.7 pF Class 1 NPO Chip Capacitor (0805)
0.1
μF
X7R Chip Capacitors (1206)
0.01
μF
Class 2 X7R Chip Capacitors (0805)
22
μF,
35 V Electrolytic Capacitors
330
μF,
50 V Electrolytic Capacitors
1 kW, 5% Chip Resistors (0805)
499
W,
1% Chip Resistor (0805)
100 kW, 5% Chip Resistors (0805)
Part Number
600S1R8AT - 250 - T
600S1R5AT - 250 - T
600S3R9AT - 250 - T
600S6R8AT - 250 - T
GRM215CB1H101CZ01D
GRM215CB1H4R7CZ01D
C1206C104K5RACT
C0805C103K5RACT
ECE - 1AVKS220
ECA - 1HM331
Manufacturer
ATC
ATC
ATC
ATC
Murata
Murata
Kemet
Kemet
Panasonic
Panasonic
MW5IC2030NBR1 MW5IC2030GNBR1
4
RF Device Data
Freescale Semiconductor
R
D2
C19
V
D1
MW5IC2030M
Rev 3
R
G2
V
D2
C20
R3
C9
C6
C12
R6
C13
C7
CUTOUT AREA
C8
C5
C3
C2
C1
C17
C18
C15
C16
C14
R4
R5
C10
C4
R
D1
C11
R1
V
G2
NC
V
G1
R
G1
R2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MW5IC2030NBR1(GNBR1) Test Circuit Component Layout
MW5IC2030NBR1 MW5IC2030GNBR1
RF Device Data
Freescale Semiconductor
5
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