PTMA180402EL
PTMA180402FL
Wideband RF LDMOS Integrated Power Amplifier
40 W, 1800 – 2000 MHz
Description
The PTMA180402EL and PTMA180402FL are matched, wideband
40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all
typical modulation formats from 1800 to 2000 MHz. These devices
are offered in thermally-enhanced ceramic packages for cool and
reliable operation.
PTMA180402EL
Package H-33265-8
PTMA180402FL
Package H-34265-8
Features
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ1
= 330 mA
35
30
25
20
15
10
5
1700
0
Broadband Performance
•
•
•
Return Loss (dB)
Designed for wide RF and modulation bandwidths
and low memory effects
On-chip matching, integrated input DC block,
50-ohm input and > 5-ohm output
Typical single-carrier CDMA performance at
1960 MHz, 28 V
- Average output power = 4 W
- Linear gain = 30 dB
- Efficiency = 14%
- Adjacent channel power = –53 dBc
Typical 2-tone performance, 1960 MHz, 28 V
- Output power (PEP) = 50 W at IM3 = –30 dBc
- Efficiency = 33%
Capable of handling 10:1 VSWR @ 28 V, 40 W
(CW) output power
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
High-performance, thermally-enhanced packages,
Pb-free and RoHS compliant, with solder-friendly
plating
Gain
-5
-10
-15
Gain (dB)
Return Loss
•
-20
-25
-30
2200
•
•
•
1800
1900
2000
2100
Frequency (MHz)
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 12
*See Infineon distributor for future availability.
Rev. 09.1, 2013-07-30
PTMA180402EL
PTMA180402FL
RF Characteristics
CDMA Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ2
= 335 mA, P
OUT
= 4 W average, ƒ = 1960 MHz
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
28.5
13
—
Typ
30
14
–53
Max
—
—
–50
Unit
dB
%
dBc
η
D
ACPR
DC Characteristics
Stage 1 Characteristics
Drain Leakage Current
Conditions
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
—
—
—
—
2.0
Typ
—
—
—
1.6
2.5
Max
1.0
10.0
1.0
—
3.0
Unit
µA
µA
µA
Ω
V
Gate Leakage Current
On-state Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 160 mA
Stage 2 Characteristics
Drain-source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
65
—
—
—
—
2.0
Typ
—
—
—
—
0.21
2.5
Max
—
1.0
10.0
1.0
—
3.0
Unit
V
µA
µA
µA
Ω
V
Gate Leakage Current
On-state Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 330 mA
Data Sheet
2 of 12
Rev. 09.1, 2013-07-30
PTMA180402EL
PTMA180402FL
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Overall Thermal Resistance (T
CASE
= 70°C)
P
OUT
= 40 W, I
DQ1
= 160 mA, I
DQ2
= 330 mA
1st Stage
2nd Stage
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
θJC
R
θJC
Value
65
–0.5 to +12
24 to 28
200
–40 to +150
5.0
1.1
Unit
V
V
V
°C
°C
°C/W
°C/W
Ordering Information
Type and Version
PTMA180402EL V1
PTMA180402EL V1 R50
PTMA180402FL V1
PTMA180402FL V1 R50
Package Type
H-33265-8
H-33265-8
H-34265-8
H-34265-8
Package Description
Themally-enhanced, slotted flange
Themally-enhanced, slotted flange
Themally-enhanced, earless flange
Themally-enhanced, earless flange
Shipping
Tray
Tape
Tray
Tape
Typical Performance
(data taken in a production test fixture)
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ2
= 330 mA
32
31
50
40
30
20
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
30
35
40
45
50
10
0
40
CW Performance
V
DD
= 28 V, I
DQ1
= 130 mA, I
DQ2
= 330 mA
-20
-25
-30
Two-tone at Selected Frequencies
Power Added Efficiency (%)
Efficiency
Gain
35
30
PAE (%)
30
29
28
27
20
15
10
5
0
30
Efficiency
IMD3
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
35
40
45
-40
-45
-50
-55
-60
Output Power (dBm)
Output Power, avg. (dBm)
Data Sheet
3 of 12
Rev. 09.1, 2013-07-30
IMD3 (dBc)
Gain (dB)
25
-35
PTMA180402EL
PTMA180402FL
Typical Performance
(cont.)
V
DD
= 28 V, I
DQ1
= 160 mA, I
DQ2
= 330 mA
-35
-40
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
25
IS-95 at Selected Frequencies
V
DD
= 28 V, I
DQ1
= 160 mA, I
DQ2
= 330 mA,
ƒ = 1960 MHz
Adj. Ch. Power Ratio (dBc)
35
25
15
5
-5
IS-95 at Selected Temperatures
Gain
-40
-45
Power Added Efficiency (%)
20
15
10
ACPR (dBc)
-45
-50
-55
-60
-65
Gain (dB),
Power Added Efficiency (%)
Efficiency
+25ºC
–25ºC
+90ºC
PAE
-50
-55
ACPR
5
0
ACPR
-60
-65
0
2
4
6
8
10
0
2
4
6
8
10
Output Power (W)
Output Power, avg. (W)
Gate
–
Source Voltage vs. Temperature
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ2
= 335 mA
1.15
-30
-35
V
DD
= 28 V, I
DQ1
= 160 mA, I
DQ2
= 330 mA,
Test Mode 1 w/64 DPCH, PAR = 7.5 dB
25
20
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
WCDMA Performance
Normalized Gate
–
Source Voltage
(threshold), V
ACPR (dBc)
1.05
1.00
0.95
0.90
0.85
-40
-45
-50
Efficiency
15
10
5
Slope =
–1.3
mV/°C
ACPR
-30
-10
10
30
50
70
90
-55
1
3
5
7
9
11
0
Temperature (°C)
Output Power (W)
Data Sheet
4 of 12
Rev. 09.1, 2013-07-30
Power Added Efficiency (%)
1.10
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