DISCRETE SEMICONDUCTORS
DATA SHEET
andbook, halfpage
MBD128
BF1206
Dual N-channel dual-gate
MOS-FET
Product specification
2003 Nov 17
Philips Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
FEATURES
•
Two low noise gain controlled amplifiers in a single
package
•
Superior cross-modulation performance during AGC
•
High forward transfer admittance
•
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
•
Gain controlled low noise amplifiers for VHF and UHF
applications with 5 V supply voltage, such as digital and
analog television tuners.
DESCRIPTION
The BF1206 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected. Internal bias
circuits enable DC stabilization and a very good
cross-modulation performance during AGC. Integrated
diodes between the gates and source protect against
excessive input voltage surges. The transistor is
encapsulated in SOT363 micro-miniature plastic package.
AMP
a
BF1206
PINNING - SOT363
PIN
1
2
3
4
5
6
drain (b)
source
gate 1 (b)
gate 1 (a)
gate 2
drain (a)
DESCRIPTION
handbook, halfpage
d (a)
5
4
g2
g1 (a)
6
AMP
b
1
2
Top view
3
d (b)
MAM480
s
g1 (b)
Marking code: L6-.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
−
−
amp. a: I
D
= 18 mA
amp. b: I
D
= 12 mA
C
ig1-s
C
rss
X
mod
input capacitance at gate 1
reverse transfer capacitance
cross-modulation
amp. a: I
D
= 18 mA; f = 1 MHz
amp. b: I
D
= 12 mA; f = 1 MHz
f = 1 MHz
amp. a: input level for k = 1% at
40 dB AGC
amp. b: input level for k = 1% at
40 dB AGC
NF
noise figure
amp. a: f = 400 MHz; I
D
= 18 mA
amp. b: f = 800 MHz; I
D
= 12 mA
amp. a: f = 11 MHz; I
D
= 18 mA
amp. b: f = 11 MHz; I
D
= 12 mA
2003 Nov 17
2
33
29
−
−
−
102
100
−
−
−
−
−
−
38
34
2.4
1.7
15
105
103
1.3
1.4
3
3.5
Per MOS-FET; unless otherwise specified
V
DS
I
D
y
fs
drain-source voltage
drain current (DC)
forward transfer admittance
6
30
48
44
2.9
2.2
−
−
−
1.9
2.0
−
−
V
mA
mS
mS
pF
pF
fF
dBµV
dBµV
dB
dB
dB
dB
Philips Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BF1206
−
DESCRIPTION
plastic surface mounted package; 6 leads
VERSION
SOT363
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
−
−
−
−
T
s
≤
107
°C;
note 1
−
−65
−
MIN.
MAX.
UNIT
Per MOS-FET; unless otherwise specified
V
DS
I
D
I
G1
I
G2
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
240
UNIT
K/W
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
storage temperature
junction temperature
6
30
±10
±10
180
+150
150
V
mA
mA
mA
mW
°C
°C
2003 Nov 17
3
Philips Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
BF1206
handbook, halfpage
200
MLE257
Ptot
(mW)
150
100
50
0
0
50
100
150
Ts (°C)
200
Fig.2 Power derating curve.
STATIC CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V
G1-S
= V
G2-S
= 0; I
D
= 10
µA
V
GS
= V
DS
= 0; I
G1-S
= 10 mA
V
GS
= V
DS
= 0; I
G2-S
= 10 mA
V
G2-S
= V
DS
= 0; I
S-G1
= 10 mA
V
G1-S
= V
DS
= 0; I
S-G2
= 10 mA
V
DS
= 5 V; V
G2-S
= 4 V; I
D
= 100
µA
V
DS
= 5 V; V
G1-S
= 5 V; I
D
= 100
µA
amp. a:
V
G2-S
= 4 V; V
DS
= 5 V; R
G
= 91 kΩ; note 1
MIN.
MAX.
−
10
10
1.5
1.5
1
1
23
17
50
20
UNIT
Per MOS-FET unless otherwise specified
V
(BR)DSS
V
(BR)G1-SS
V
(BR)G2-SS
V
(F)S-G1
V
(F)S-G2
V
G1-S(th)
V
G2-S(th)
I
DSX
drain-source breakdown voltage
gate-source breakdown voltage
gate-source breakdown voltage
forward source-gate voltage
forward source-gate voltage
gate-source threshold voltage
gate-source threshold voltage
drain-source current
6
6
6
0.5
0.5
0.3
0.35
14
V
V
V
V
V
V
V
mA
mA
nA
nA
amp. b:
9
V
G2-S
= 4 V; V
DS
= 5 V; R
G
= 150 kΩ; note 1
I
G1-S
I
G2-S
Note
1. R
G1
connects gate 1 to V
GG
= 5 V.
gate cut-off current
gate cut-off current
V
G1-S
= 5 V; V
G2-S
= V
DS
= 0
V
G2-S
= 5 V; V
G1-S
= V
DS
= 0
−
−
2003 Nov 17
4
Philips Semiconductors
Product specification
Dual N-channel dual-gate MOS-FET
DYNAMIC CHARACTERISTICS AMPLIFIER a
Common source; T
amb
= 25
°C;
V
G2-S
= 4 V; V
DS
= 5 V; I
D
= 18 mA; unless otherwise specified.
SYMBOL
y
fs
C
ig1-ss
C
ig2-ss
C
oss
C
rss
NF
PARAMETER
forward transfer admittance
input capacitance at gate 1
input capacitance at gate 2
output capacitance
noise figure
f = 1 MHz
f = 1 MHz
f = 1 MHz
f = 11 MHz; G
S
= 20 mS; B
S
= 0
f = 400 MHz; Y
S
= Y
S opt
f = 800 MHz; Y
S
= Y
S opt
G
tr
power gain
f = 200 MHz; G
S
= 2 mS; B
S
= B
S opt
;
G
L
= 0.5 mS; B
L
= B
L opt
; note 1
f = 400 MHz; G
S
= 2 mS; B
S
= B
S opt
;
G
L
= 1 mS; B
L
= B
L opt
; note 1
f = 800 MHz; G
S
= 3.3 mS; B
S
= B
S opt
;
G
L
= 1 mS; B
L
= B
L opt
; note 1
X
mod
cross-modulation
input level for k = 1%; f
w
= 50 MHz;
f
unw
= 60 MHz; note 2
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
Notes
1. Calculated from measured s-parameters.
2. Measured in Fig.35 test circuit.
90
−
102
−
92
105
−
−
−
CONDITIONS
pulsed; T
j
= 25
°C
MIN.
33
−
−
−
−
−
−
−
−
−
−
TYP.
38
2.4
3.2
1.1
15
3
1.3
1.6
35
30
23
BF1206
MAX.
48
2.9
−
−
30
−
1.9
2.2
−
−
−
UNIT
mS
pF
pF
pF
fF
dB
dB
dB
dB
dB
dB
reverse transfer capacitance f = 1 MHz
dBµV
dBµV
dBµV
2003 Nov 17
5
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
