SMART
Features
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®
SM5720480UUEUGU
September 23, 1997
Modular Technologies
32MByte (4M x 72) DRAM Module - 2Mx8 based
168-pin DIMM, Buffered, ECC
Part Numbers
SM57204800UEUGU
SM57204801UEUGU
SM57204808UEUGU
SM57204809UEUGU
Standard
:
JEDEC
Configuration
:
ECC
Access Time
:
60/70/80ns
Operation Mode
:
FPM/EDO
Operating Voltage :
3.3/5.0V
Refresh
:
2K/4K
Device Physicals
:
400mil SOJ / 300mil SOJ/TSOP
Lead Finish
:
Gold
Length x Height
:
5.250" x 1.000"
No. of sides
:
Double-sided
Mating Connector (Examples)
Vertical
:
AMP-390052-1 (5.0V)/390052-4 (3.3V)
:
:
:
:
FPM, 5.0V
FPM, 3.3V
EDO, 5.0V
EDO, 3.3V
Note: Refer last page for all "U” options.
Related Products
SM5720440UUEUGU
:
4Mx72,
4Mx4 Based.
Functional Diagram
RAS0#
CAS0#
WE0#
OE0#
A0
RAS1#
CAS1#
2Mx16
Block
2Mx16
Block
2Mx8
DRAM
2Mx16
Block
2Mx16
Block
RAS2#
CAS4#
WE2#
OE2#
B0
RAS3#
CAS5#
2Mx16
Block
2Mx16
Block
2Mx8
DRAM
2Mx16
Block
2Mx16
Block
DQ0~DQ15
DQ16~DQ31
DQ32~DQ39
DQ40~DQ55
DQ56~DQ71
DQ0~DQ71
Notes : 1. A0~A10/A11 are connected to all DRAMs through buffers
(A11 is NC for 2K refresh module).
2. All signals including PDs (with exception of RAS#, Data and IDs)
are buffered.
3. Each 2Mx16 Block comprises of two 2Mx8 DRAMs.
( All specifications of this device are subject to change without notice.)
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
V
CC
V
SS
Decoupling capacitors
to all devices.
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
1
SMART
Pin Name
A0, B0~A10
A0, B0~A9
A0, B0~A11
A0, B0~A8
DQ0~DQ71
RAS0#~RAS3#
CAS0#, CAS1#
CAS4#, CAS5#
Presence Detect Pins
Mode
FPM
EDO
V
OL†
NC
®
SM5720480UUEUGU
September 23, 1997
Modular Technologies
Row Addresses for 2K Refresh Module
Column Addresses for 2K Refresh Module
Row Addresses for 4K Refresh Module
Column Addresses for 4K Refresh Module
Data Inputs/Outputs
Row Address Strobe Inputs
Column Address Strobe Inputs
OE0#, OE2#
WE0#, WE2#
PDE#
PD1~PD8
ID0, ID1
V
CC
V
SS
NC
Pin
No.
85
86
87
88
89
90
91
92
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
124
125
126
Output Enable Inputs
Write Enable Inputs
PD Enable Input
Presence Detect Inputs
ID Inputs
Power Supply
Ground
No Connection
Pin
No.
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
Pin
No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
Notes :
Pin
Designation
V
SS
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
DQ8
V
SS
DQ9
DQ10
DQ11
DQ12
DQ13
V
CC
DQ14
DQ15
DQ16
DQ17
V
SS
NC
NC
V
CC
WE0#
CAS0#
NC
RAS0#
OE0#
V
SS
A0
A2
A4
A6
A8
A10
NC
V
CC
NC
NC
1.
Pin
No.
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
Pin
Designation
V
SS
OE2#
RAS2#
CAS4#
NC
WE2#
V
CC
NC
NC
DQ18
DQ19
V
SS
DQ20
DQ21
DQ22
DQ23
V
CC
DQ24
NC
NC
NC
NC
DQ25
DQ26
DQ27
V
SS
DQ28
DQ29
DQ30
DQ31
V
CC
DQ32
DQ33
DQ34
DQ35
V
SS
PD1 (V
OL
)
PD3 (V
OL
)
PD5
PD7
ID0 (V
SS
)
V
CC
†
†
†
Pin
Designation
V
SS
DQ36
DQ37
DQ38
DQ39
V
CC
DQ40
DQ41
DQ42
DQ43
DQ44
V
SS
DQ45
DQ46
DQ47
DQ48
DQ49
V
CC
DQ50
DQ51
DQ52
DQ53
V
SS
NC
NC
V
CC
NC
CAS1#
NC
RAS1#
NC
V
SS
A1
A3
A5
A7
A9
A11 (Note)
NC
V
CC
NC
B0
2.
Pin
Designation
V
SS
NC
RAS3
CAS5#
†
NC
PDE#
V
CC
NC
NC
DQ54
DQ55
V
SS
DQ56
DQ57
DQ58
DQ59
V
CC
DQ60
NC
NC
NC
NC
DQ61
DQ62
DQ63
V
SS
DQ64
DQ65
DQ66
DQ67
V
CC
DQ68
DQ69
DQ70
DQ71
V
SS
PD2 (NC)
PD4 (NC)
PD6
PD8 (V
OL
) †
ID1 (V
SS
)
V
CC
Pin
PD5
Pin
PD6
PD7
Access Time
60ns 70ns 80ns
NC
NC
V
OL†
NC
NC
V
OL†
†
†
†
†
†
†
†
†
†
†
†
†
†
†
†
†
†
†
†
Signals marked with “†” are buffered.
A11 is NC for 2K refresh module
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
2
SMART
FPM & EDO-based Modules
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM5720480UUEUGU
September 23, 1997
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Vcc=3.3V
- 0.5 to +4.6
20
0 to +70
- 55 to +150
50
Ratings
Vcc=5.0V
- 1.0 to +7.0
20
0 to +70
- 55 to +150
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Capacitance
(V
CC
= 3.3V
±
10%/5.0V
±
10%, T
A
= +25
°
C)
Parameter
Input Capacitance (Address, CAS#, WE#, OE#)
Input Capacitance (RAS0#, RAS1#)
Input Capacitance (RAS2#, RAS3#)
Input/Output Capacitance (DQ0~DQ71)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
C
I1
C
I2
C
I3
C
I/O
Max
17
45
38
24
Unit
pF
pF
pF
pF
Symbol
V
CC
V
SS
V
IH
V
IL
Vcc=3.3V
Min
Typ
Max
3.0
3.3
3.6
0
2.0
-0.3
0
-
-
0
V
CC
+0.3
0.8
Vcc=5.0V
Min
Typ
Max
4.5
5.0
5.5
0
2.4
-1.0
0
-
-
0
V
CC
+1.0
0.8
Unit
V
V
V
V
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
3
SMART
®
SM5720480UUEUGU
September 23, 1997
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.3V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -2mA
Low I
out
= 2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
60ns
70ns
Min Max Min Max
-50
50 -50
50
-20
20
-20
20
80ns
Min Max
-50 50
-20
20
Unit
µ
A
µ
A
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤V
out
≤
V
CC
D
out
= Disable
High I
out
= -5mA
Low I
out
= 4.2mA
2.4
-
-
0.4
2.4
-
-
0.4
2.4
-
-
0.4
V
V
60ns
70ns
Min Max Min Max
-50
50
-50
50
-20
20
-20
20
80ns
Min Max
-50
50
-20
20
Unit
µA
µA
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
4
SMART
FPM-based Modules
®
SM5720480UUEUGU
September 23, 1997
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 3.3V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
LVTTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=VIH; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=VIL, CAS#, Address
cycling @ t
PC
=min.
Refresh
2K
4K
60ns
928
748
46
Max.
70ns
838
658
46
Unit
80ns
748
568
46
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
28
2K
4K
2K
4K
2K
4K
928
748
928
748
748
658
28
838
658
838
658
658
568
28
748
568
748
568
568
478
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
1, 3
1, 3
(V
CC
= 5.0V±10%, V
SS
= 0V, T
A
= 0 to +70
°C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
Refresh
2K
4K
60ns
982
802
100
Max.
70ns
892
712
100
Unit
80ns
802
622
100
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
82
2K
4K
2K
4K
2K
4K
982
802
982
802
802
712
82
892
712
892
712
712
622
82
802
622
802
622
622
532
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
Notes:
I
CC3
I
CC4
I
CC5
1, 3
1, 3
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
Suite 6A, 64 Canning Hwy., Victoria Park, Perth, WA 6106, Australia • Tel: + 61-9-361-9705 • Fax: + 61-9-361-9715
5
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