DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA2714GR
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2714GR is P-Channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and Li-ion battery protection circuit.
PACKAGE DRAWING (Unit: mm)
8
5
1, 2, 3
; Source
4
; Gate
5, 6, 7, 8 ; Drain
1.8 MAX.
•
Low on-state resistance
R
DS(on)1
= 20 mΩ MAX. (V
GS
=
−
10 V, I
D
=
−
3.5 A)
R
DS(on)2
= 30 mΩ MAX. (V
GS
=
−
4.5 V, I
D
=
−
3.5 A)
R
DS(on)3
= 34 mΩ MAX. (V
GS
=
−
4.0 V, I
D
=
−
3.5 A)
•
Low C
iss
: C
iss
= 1370 pF TYP.
•
Small and surface mount package (Power SOP8)
FEATURES
1
4
5.37 MAX.
+0.10
–0.05
6.0 ±0.3
4.4
0.8
1.44
0.15
0.05 MIN.
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
0.12 M
µ
PA2714GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note3
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
−
30
V
V
A
A
W
W
°C
°C
A
mJ
Source
Gate
Drain
m20
m7
m28
2
2
150
−
55 to +150
−
7
EQUIVALENT CIRCUIT
Total Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Body
Diode
Single Avalanche Current
Single Avalanche Energy
Notes 1.
2.
3.
4.
Remark
Note4
Note4
I
AS
E
AS
4.9
PW
≤
10
µ
s, Duty Cycle
≤
1%
2
Mounted on a ceramic substrate of 1200 mm x 2.2 mm
Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm) , PW = 10 sec
Starting T
ch
= 25°C, V
DD
=
−
15 V, R
G
= 25
Ω,
L = 100
µ
H, V
GS
=
−
20
→
0 V
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible,
and quickly dissipate it once, when it has occurred.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with NEC Electronics sales
representative for availability and additional information.
Document No.
G15982EJ2V0DS00 (2nd edition)
Date Published November 2002 NS CP(K)
Printed in Japan
The mark
!
shows major revised points.
2002
µ
PA2714GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
=
−24
V
V
GS
=
−10
V
I
D
= 7 A
I
F
= 7 A, V
GS
= 0 V
I
F
= 7 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
=
−30
V, V
GS
= 0 V
V
GS
=
m
20 V, V
DS
= 0 V
V
DS
=
−10
V, I
D
=
−1
mA
V
DS
=
−10
V, I
D
=
−3.5
A
V
GS
=
−10
V, I
D
=
−3.5
A
V
GS
=
−4.5
V, I
D
=
−3.5
A
V
GS
=
−4.0
V, I
D
=
−3.5
A
V
DS
=
−10
V
V
GS
= 0 V
f = 1 MHz
V
DD
=
−15
V, I
D
=
−3.5
A
V
GS
=
−10
V
R
G
= 10
Ω
−1.0
5
11
16
22
25
1370
390
240
8
15
76
42
31
4
9
0.82
43
27
20
30
34
MIN.
TYP.
MAX.
−1
UNIT
µ
A
nA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
m
100
−2.5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
=
−20 →
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS(−)
R
L
V
DD
V
DS(−)
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS(−)
0
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
τ
τ
= 1
µ
s
Duty Cycle
≤
1%
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
=
−2
mA
PG.
50
Ω
R
L
V
DD
2
Data Sheet G15982EJ2V0DS
µ
PA2714GR
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT - Percentage of Rated Power - %
120
2.8
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - W
Mounted on ceramic substrate of
2
1200 mm x 2.2 mm
100
2.4
2
80
1.6
60
1.2
40
0.8
20
0.4
0
0
25
50
75
100
125
150
175
0
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°C
T
A
- Ambient Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
- 100
I
D(pulse)
PW = 100
µs
I
D
- Drain Current - A
- 10
I
D(DC)
1 ms
-1
R
DS(on)
Limited
(at V
GS
= 10 V)
-
10 ms
100 ms
Power Dissipation Limited
- 0.1
T
A
= 25°C
Single Pulse
Mounted on ceramic substrate of
2
1200 mm x 2.2 mm
- 0.1
-1
- 10
DC
- 0.01
- 0.01
- 100
V
DS
- Drain to Source Voltage - V
5
1000
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
th(t)
- Transient Thermal Resistance -
°C/W
100
R
th(ch-A)
= 62.5°C/W
10
1
0.1
Single Pulse
2
Mounted on ceramic substrate of 1200 mm x 2.2 mm
T
A
= 25°C
0.01
100
µ
1m
10 m
PW - Pulse Width - s
100 m
1
10
100
1000
Data Sheet G15982EJ2V0DS
3
µ
PA2714GR
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 30
- 100
FORWARD TRANSFER CHARACTERISTICS
V
GS
=
−10
V
- 25
−4.5
V
I
D
- Drain Current - A
−4.0
V
- 20
I
D
- Drain Current - A
- 10
T
ch
=
−55°C
25°C
75°C
150°C
- 15
-1
- 10
- 0.1
-5
Pulsed
0
0
- 0.2
- 0.4
- 0.6
- 0.8
-1
- 0.01
0
-1
-2
-3
V
DS
=
−10
V
Pulsed
-4
-5
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
| y
fs
| - Forward Transfer Admittance - S
-3
100
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
GS(off)
- Gate Cut-off Voltage - V
- 2.5
-2
10
T
ch
=
−
55°C
25°C
75°C
150°C
- 1.5
-1
1
- 0.5
V
DS
=
−10
V
I
D
=
−1
mA
-50
0
50
100
150
V
DS
=
−10
V
Pulsed
0.1
- 0.1
-1
- 10
- 100
0
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
Pulsed
35
Pulsed
40
30
V
GS
=
−4.0
V
25
30
20
−4.5
V
20
15
−10
V
I
D
=
−3.5
A
10
10
5
0
- 0.1
0
0
-5
- 10
- 15
- 20
-1
- 10
- 100
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
4
Data Sheet G15982EJ2V0DS
µ
PA2714GR
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
R
DS(on)
- Drain to Source On-state Resistance - mΩ
35
V
GS
=
−4.0
V
30
C
iss
, C
oss
, C
rss
- Capacitance - pF
C
iss
1000
25
−4.5
V
20
C
oss
C
rss
100
−10
V
15
10
5
I
D
=
−3.5
A
Pulsed
-50
0
50
100
150
V
GS
= 0 V
f = 1 MHz
10
- 0.01
- 0.1
-1
- 10
- 100
0
T
ch
- Channel Temperature - °C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
- 30
- 12
V
DS
- Drain to Source Voltage - V
- 10
V
DD
=
−24
V
−15
V
−6
V
100
t
d(off)
- 20
-8
t
f
t
r
10
-6
V
GS
- 10
-4
t
d(on)
V
DD
=
−15
V
V
GS
=
−10
V
R
G
= 10
Ω
- 10
- 100
-2
V
DS
0
0
5
10
15
20
25
30
35
0
1
- 0.1
-1
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
V
GS
=
−10
V
0V
10
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
100
1
10
0.1
Pulsed
0.01
0
0.2
0.4
0.6
0.8
1
1.2
1.4
di/dt = 100 A/µs
V
GS
= 0 V
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Diode Forward Current - A
V
GS
- Gate to Source Voltage - V
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
Data Sheet G15982EJ2V0DS
5
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