Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
60N035
Advance Information
Description
The Bay Linear n-channel power field effect transistors are
produced using high cell density DMOS technology , These
devices are particularly suited for low voltage applications
such as automotive and other battery powered circuits where
fast switching, low in-line power loss and resistance to
transistors are needed.
The TO-220 is offered in a 3-pin is universally preferred for all
commercial-industrial applications at power dissipation level
to approximately to 50 watts. Also, available in a D
2
surface
mount power package with a power dissipation up to 2 Watts
Features
•
•
•
Critical DC Electrical parameters
specified at elevated Temp.
Rugged internal source-drain diode
can eliminate the need for external
Zener diode transient suppresser
Super high density cell design for
extremely low R
DS(ON)
V
DSS
= 30V
R
DS (ON)
= 0.015
Ω
I
D
= 60A
Ordering Information
Device
60N035T
60N035S
Package
TO-220
TO-263 ( D
2
)
Temp.
0 to 150°C
0 to 150°C
Absolute Maximum Rating
Symbol
I
D
Parameter
Drain Current
Continues
Pulsed
Drain-Source Voltage
Gate Source Voltage
Total Power Dissipation @ T
C
=25°C
Derate above 25°C
Operating and Storage
Temperature Range
Max
60
180
30
±20
50
0.4
-65 to 175
Unit
A
V
V
W
W/°C
°
°
C
V
DSS
V
GSV
P
D
T
J
T
STG
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
60N035
Electrical Characteristics (
T
C
=
Symbol
Parameter
OFF CHARACTERSTICS
Drain source breakdown
BV
DSS
voltage
Zero Gate Voltage Drain
I
DSS
Current
Gate-Body Leakage Forward
I
GBLF
Gate-Body Leakage Reverse
I
GBLR
ON CHARACTERSTICS
V
GS
R
DS(ON)
Gate Threshold Voltage
Static Drain Voltage
25°C unless otherwise specified)
°
Conditions
V
GS
=0V, I
D
=250µA
V
DS
=24V
V
GS
=0V
V
GS
=20V
V
GS
=20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, I
D
=26A
V
CS
=4.5V, I
O
=21A
Min
30
Typ
Max
Units
V
10
V
DS
=0V
V
DS
=0V
1
0.014
60
100
-100
3
0.015
0.025
µ
A
nA
nA
V
Ω
A
ON-State Drain Current
V
GS
=10V
I
D(ON)
Forward Tran conductance
g
fs
DYNAMIC CHARACTRISTICS
Input Capacitance
C
ISS
V
DS
= 15V, V
GS
=0V
Output Capacitance
C
OSS
F=1.0 MHZ
Reverse Tras. Capacitance
C
RSS
SWITCHING CHARACTERSTICS
Turn-ON Delay Time
t
D(ON)
V
DD
=15V
Turn-ON Rise Time
t
r
I
D
=52A, V
DS
=10V
Turn-OFF Delay Time
t
d(off)
R
GEN
=25Ω
Turn-OFF Fall Time
t
F
SOURCE DRAIN DIODE CHRACTERISTICS
Maxim Continuous Drain source Diode Forward Current
I
S
Drain Source Diode
V
GS
=0V
V
DS
(note)
Forward Votlage
I
S
=26A
THERMAI CHRACTERISTICS
Thermal Resistance, Junction to Case
R
JC
Thermal Resistance, Junction to Ambient
R
JC
Note: Pulse Test: Pulse With≤ 300
µS,
Duty Cycle
≤
2.0%
1500
700
300
60
200
50
120
60
1.35
2.5
62.5
pF
pF
pF
nS
A
V
°
C/W
°
C/W
Advance Information-
These data sheets contain descriptions of products that are in development. The specifications are based on the engineering calculations,
computer simulations and/ or initial prototype evaluation.
Preliminary Information-
These data sheets contain minimum and maximum specifications that are based on the initial device characterizations. These limits are
subject to change upon the completion of the full characterization over the specified temperature and supply voltage ranges.
The application circuit examples are only to explain the representative applications of the devices and are not intended to guarantee any circuit
design or permit any industrial property right to other rights to execute. Bay Linear takes no responsibility for any problems related to any
industrial property right resulting from the use of the contents shown in the data book. Typical parameters can and do vary in different
applications. Customer’s technical experts must validate all operating parameters including “ Typical” for each customer application.
LIFE SUPPORT AND NUCLEAR POLICY
Bay Linear products are not authorized for and should not be used within life support systems which are intended for surgical
implants into the body to support or sustain life, in aircraft, space equipment, submarine, or nuclear facility applications without
the specific written consent of Bay Linear President.
Bay Linear, Inc
2478 Armstrong Street, Livermore, CA 94550 Tel: (925) 989-7144, Fax: (925) 940-9556
www.baylinear.com
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