The resistors are suitable for processing on automatic insertion equipment, cutting and bending machines.
Derating Curve
100
80
Pmax (%)
60
40
20
0
-55
0
70
100
Tamb (°C)
155
235
Maximum dissipation (Pmax) in percentage of rated power as a function of ambient temperature (Tamb)
Fusing Characteristics
100
Fusing Time (S)
10
1
0.1
12
16
20
24
28
32
36
40
Multiple of the Power Rating
3-1773449-2 CIS WR 10/2011
Dimensions are in millimeters
and inches unless otherwise
specified. Values in brackets
are standard equivalents.
Dimensions are shown for
reference purposes only.
Specifications subject
to change.
For email, phone or live chat, go to:
te.com/help
Power Resistor
Type RR Series
Pulse Characteristics -
1W
10
5
Po
T
10s
10
4
Pmax (W)
10
3
One Pulse
Condition Test: Resistance change
≤±5% with pulse 1000 cycles as
like the figure (reference only).
1. Added power and added voltage
are within the lower teritory of this
graph.
2. Added in normal temperature
and humidity.
10
2
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
Ti(S)
Maximum permissible peak pulse power (Pmax) as a function of pulse duration (Ti)
2W
10
5
Po
10
4
Pmax (W)
One Pulse
10
3
T
10s
Condition Test: Resistance change
≤±5% with pulse 1000 cycles as
like the figure (reference only).
1. Added power and added voltage
are within the lower teritory of this
graph.
2. Added in normal temperature
and humidity.
10
2
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
Ti(S)
Maximum permissible peak pulse power (Pmax) as a function of pulse duration (Ti)
3W
10
5
Po
10
4
One Pulse
Pmax (W)
10
3
T
10s
Condition Test: Resistance change
≤±5% with pulse 1000 cycles as
like the figure (reference only).
1. Added power and added voltage
are within the lower teritory of this
graph.
2. Added in normal temperature
and humidity.
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
2
10
Ti(S)
Maximum permissible peak pulse power (Pmax) as a function of pulse duration (Ti)
Marking
The nominal resistance and tolerance are marked on the resistor using four or five coloured bands in
accordance with IEC publication 60062 “Colour code for fixed resistors”. Standard values of nominal
resistance are taken from the E24/E96 series for resistors with a tolerance of ±5% or ±1%. The values
of the E24/E96 series are in accordance with IEC publication 60063.
3-1773449-2 CIS WR 10/2011
Dimensions are in millimeters
and inches unless otherwise
specified. Values in brackets
are standard equivalents.
Dimensions are shown for
reference purposes only.
Specifications subject
to change.
For email, phone or live chat, go to:
te.com/help
Power Resistor
Type RR Series
Packaging -
Ammo Pack Boxed
M
RR01
RR02
RR03
75
75
100
N
100
55
110
P
255
255
265
Quantity
5000
1000
1000
Packaging - Tape and Reeled
Taping
RR01
RR02
RR03
52 ±1.0
52 ±1.0
63 ±1.0
M
80
80
80
N
295
295
295
P
295
295
295
q
310
310
310
V
75
75
75
Quantity
pcs.
5000
2500
1000
How to Order
RR
Common Part
01
Power Rating
01 - 1 Watt
J - 5%
RR - Power Resistor
02 - 2 Watts
F - 1%
03 - 3 Watts
J
Tolerance
1K0
Value
100 ohm
(100 ohms) 100R
1K0
(1000 ohms) 1K0
100 K ohm
(100,000 ohms)
100K
TR
Packaging
TR - Reeled
TB - Ammo Pack
TE Connectivity and the TE connectivity (logo) are trademarks.
Other logos, product and Company names mentioned herein may be trademarks of their respective owners.
While TE has made every reasonable effort to ensure the accuracy of the information in this datasheet, TE does not guarantee that it is error-free, nor does TE make any other
representation, warranty or guarantee that the information is accurate, correct, reliable or current. TE reserves the right to make any adjustments to the information contained herein
at any time without notice. TE expressly disclaims all implied warranties regarding the information contained herein, including, but not limited to, any implied warranties of merchantabili-
ty or fitness for a particular purpose. The dimensions in this datasheet are for reference purposes only and are subject to change without notice. Specifications are subject to change
without notice. Consult TE for the latest dimensions and design specifications.
在全球半导体产业因景气不佳而纷传并购、整合之际，两大IT巨头三星、IBM日前却双双宣布，将强化半导体产业投资。 三星电子本周一宣布，已向韩国证券交易所提交一份申请文件，打算2008年投下10.5亿美元，用于升级内存芯片生产线、改进技术工艺，从而提高产能并降低成本。无独有偶。本周二IBM公司宣布，未来3年将投资10亿美元，用于扩充位于纽约州 East Fishkill 的半导体工厂，以消...[详细]
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