PD- 93761
IRF7807D1
FETKY™ MOSFET / SCHOTTKY DIODE
• Co-Pack N-channel HEXFET
®
Power MOSFET
and Schottky Diode
• Ideal for Synchronous Rectifiers in DC-DC
Converters Up to 5A Output
• Low Conduction Losses
• Low Switching Losses
• Low Vf Schottky Rectifier
Description
The FETKY
™
family of Co-Pack HEXFET
®
MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifier’s low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
Current (V
GS
≥
4.5V)
Pulsed Drain Current
Power Dissipation
Schottky and Body Diode
Average ForwardCurrent
25°C
70°C
25°C
70°C
T
J
, T
STG
I
F
(AV)
25°C
70°C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
Max.
30
±12
8.3
6.6
66
2.5
1.6
3.5
2.2
–55 to 150
°C
W
A
A
Units
V
A/S
A/S
A/S
G
1
8
K/D
K/D
K/D
K/D
D
2
7
3
6
4
5
SO-8
Top View
Device Features (Max Values)
IRF7807D1
V
DS
R
DS(on)
Q
g
Q
sw
Q
oss
30V
25mΩ
14nC
5.2nC
18.4nC
Junction & Storage Temperature Range
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
R
θJA
Max.
50
Units
°C/W
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IRF7807D1
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage*
Static Drain-Source
on Resistance*
Drain-Source Leakage
Current*
V
(BR)DSS
R
DS
(on)
1.0
90
7.2
Min
30
Typ
Max
Units
V
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 4.5V, I
D
= 7A
V
DS
= V
GS
,I
D
= 250µA
V
DS
= 24V, V
GS
= 0V
V
DS
= 24V, V
GS
= 0V,
T
j
= 125°C
V
GS
= +/-12V
V
DS
<100mV,
V
GS
= 5V, I
D
= 7A
V
DS
= 16V,
V
GS
= 5V, I
D
= 7A
V
DS
= 16V, I
D
= 7A
17
25
mΩ
V
µA
mA
Gate Threshold Voltage* V
GS
(th)
I
DSS
Gate-Source Leakage
Current*
Total Gate Charge
Synch FET*
Total Gate Charge
Control FET*
Pre-Vth
Gate-Source Charge
Post-Vth
Gate-Source Charge
Gate to Drain Charge
Switch Charge*
(Q
gs2
+ Q
gd
)
Output Charge*
Gate Resistance
I
GSS
Q
gsync
Q
gcont
Q
gs1
Q
gs2
Q
gd
Q
SW
Q
oss
R
g
10.5
12
2.1
0.76
2.9
3.66
15.3
1.2
+/- 100
14
17
nA
nC
5.2
18.4
Ω
V
DS
= 16V, V
GS
= 0
Schottky Diode & Body Diode Ratings and Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
*
Min
V
SD
trr
Qrr
t
on
Typ
Max
0.5
0.39
51
48
Units
Conditions
V T
j
= 25°C, I
s
= 1A, V
GS
=0V
T
j
= 125°C, I
s
= 1A, V
GS
=0V
ns T
j
= 25°C, I
s
= 7.0A, V
DS
= 16V
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
≤
300 µs; duty cycle
≤
2%.
When mounted on 1 inch square copper board, t < 10 sec.
50% Duty Cycle, Rectangular
Devices are 100% tested to these parameters.
2
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IRF7807D1
100
VGS
4.5V
3.5V
3.0V
BOTTOM 2.5V
TOP
100
VGS
4.5V
3.5V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current ( A )
ID, Drain-to-Source Current (A)
10
2.5V
10
2.5V
380µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
1
0.1
380µs PULSE WIDTH
Tj = 150°C
1
10
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
60
VGS
TOP
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 0.0V
70
60
VGS
4.5V
3.5V
3.0V
2.5V
2.0V
BOTTOM 0.0V
TOP
IS, Source-to-Drain Current (A)
IS, Source-to-Drain Current (A)
50
50
40
30
20
10
0
40
30
20
0.0V
10
380µs PULSE WIDTH
Tj = 25°C
0
0
0.2
0.4
0.6
0.8
1
380µS PULSE WIDTH
0.0V Tj = 150°C
0
0.2
0.4
0.6
0.8
1
VSD, Source-to-Drain Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 3.
Typical Reverse Output Characteristics
Fig 4.
Typical Reverse Output Characteristics
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3
IRF7807D1
2000
1600
VGS, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
6.0
ID= 7.0A
VDS = 16V
C, Capacitance (pF)
4.0
1200
Ciss
800
Coss
2.0
400
Crss
0
1
10
100
0.0
0
2
4
6
8
10
12
V
DS
, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
2.0
RDS(on) , Drain-to-Source On Resistance
ID = 7.0A
100
ID, Drain-to-Source Current
(
A)
VGS = 4.5V
T J = 25°C
T J = 150°C
1.5
(Normalized)
10
1.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
1
2.5
VDS = 10V
380µs PULSE WIDTH
3.0
3.5
T J , Junction Temperature ( °C )
VGS, Gate-to-Source Voltage (V)
Fig 7.
Normalized On-Resistance
Vs. Temperature
Fig 8.
Typical Transfer Characteristics
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IRF7807D1
RDS(on) , Drain-to -Source On Resistance (
Ω
)
R
DS (on)
, Drain-to-Source On Resistance
Ω )
(
0.05
0.024
0.04
0.022
VGS = 4.5V
0.020
0.03
0.02
ID = 7.0A
VGS = 10V
0.018
0.01
2.0
4.0
6.0
8.0
10.0
0.016
0
20
40
60
80
VGS, Gate -to -Source Voltage (V)
I
D
, Drain Current (A)
Fig 9.
On-Resistance Vs. Gate Voltage
Fig 10.
On-Resistance Vs. Drain Current
100
Thermal Response (Z
thJA
)
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.01
0.1
1
10
100
10
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
(
HEXFET
®
MOSFET
)
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