19-6177; Rev 1; 5/12
EVALUATION KIT AVAILABLE
MAX17600–MAX17605
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
General Description
The MAX17600–MAX17605 devices are high-speed
MOSFET drivers capable of sinking /sourcing 4A peak
currents. The devices have various inverting and non-
inverting part options that provide greater flexibility in
controlling the MOSFET. The devices have internal logic
circuitry that prevents shoot-through during output-state
changes. The logic inputs are protected against voltage
spikes up to +14V, regardless of V
DD
voltage. Propagation
delay time is minimized and matched between the dual
channels. The devices have very fast switching time,
combined with short propagation delays (12ns typ),
making them ideal for high-frequency circuits. The
devices operate from a +4V to +14V single power
supply and typically consume 1mA of supply cur-
rent. The MAX17600/MAX17601 have standard TTL
input logic levels, while the MAX17603 /MAX17604/
MAX17605 have CMOS-like high-noise margin (HNM)
input logic levels. The MAX17600/MAX17603 are dual
inverting input drivers, the MAX17601/MAX17604 are
dual noninverting input drivers, and the MAX17602 /
MAX17605 devices have one noninverting and one
inverting input. These devices are provided with enable
pins (ENA, ENB) for better control of driver operation.
These devices are available in 8-pin (3mm x 3mm) TDFN,
8-pin (3mm x 5mm)
FMAX
®
, and 8-pin SO packages and
operate over the -40NC to +125NC temperature range.
S
Dual Drivers with Enable Inputs
S
+4V to +14V Single Power-Supply Range
S
4A Peak Sink /Source Current
S
Inputs Rated to +14V, Regardless of V
DD
Voltage
S
Low 12ns Propagation Delay
S
6ns Typical Rise and 5ns Typical Fall Times with
1nF Load
S
Matched Delays Between Channels
S
Parallel Operation of Dual Outputs for Larger
Driver Output Current
S
TTL or HNM Logic-Level Inputs with Hysteresis for
Noise Immunity
S
Low Input Capacitance: 10pF (typ)
S
Thermal Shutdown Protection
S
TDFN, µMAX, and SO Package Options
S
-40NC to +125NC Operating Temperature Range
Features
Typical Operating Circuit
V
DD
(UP TO +14V)
ENA
V
DD
Applications
Power MOSFET Switching
Switch-Mode Power Supplies
DC-DC Converters
Motor Control
Power-Supply Modules
Ordering Information
appears at end of data sheet.
INA
MAX17600
MAX17601
MAX17602
MAX17603
MAX17604
MAX17605
OUTA
ENB
OUTB
INB
GND
µMAX is a registered trademark of Maxim Integrated
Products, Inc.
For pricing, delivery, and ordering information, please contact Maxim Direct
at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
1
MAX17600–MAX17605
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
ABSOLUTE MAXIMUM RATINGS
V
DD
, INA, INB, ENA, ENB to GND ........................-0.3V to +16V
OUTA, OUTB to GND ............................................-0.3V to +16V
Junction Operating Temperature Range ......... -40NC to +125NC
Continuous Power Dissipation (T
A
= +70NC)
8-Pin TDFN (derate 23.8mW/NC above +70NC) ........1904mW
8-Pin SO (derate 74mW/NC above +70NC)............. 588.2mW*
8-Pin
FMAX
(derate 12.9mW/NC above +70NC) .....1030.9mW
*As per JEDEC 51 standard.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional opera-
tion of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Operating Temperature Range ........................ -40NC to +125NC
Junction Temperature ................................................... +150NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+240NC
PACKAGE THERMAL CHARACTERISTICS (Note 1)
TDFN
Junction-to-Ambient Thermal Resistance (B
JA
) ..........42NC/W
Junction-to-Case Thermal Resistance (B
JC
) .................8NC/W
SO
Junction-to-Ambient Thermal Resistance (B
JA
) ........136NC/W
Junction-to-Case Thermal Resistance (B
JC
) ...............38NC/W
FMAX
Junction-to-Ambient Thermal Resistance (B
JA
) .......77.6NC/W
Junction-to-Case Thermal Resistance (B
JC
) .................5NC/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maxim-ic.com/thermal-tutorial.
ELECTRICAL CHARACTERISTICS
(V
DD
= 12V, C
L
= 0F, at T
A
= -40NC to +125NC, unless otherwise noted. Typical values are specified at T
A
= +25NC. Parameters
specified at V
DD
= 4V apply to the TTL versions only.) (Note 2)
PARAMETER
POWER SUPPLY (V
DD
)
V
DD
Operating Range
V
DD
Undervoltage Lockout
V
DD
UVLO Hysteresis
V
DD
UVLO to OUT_ Delay
IDD_Q
V
DD
Supply Current
IDD_SW
V
DD
rising
Not switching, V
DD
= 14V (Note 3)
V
DD
= 4.5V, C
L
= 1nF, both channels
switching at 1MHz
V
DD
= 14V, C
L
= 10nF (Note 3)
V
DD
= 14V, I
OUT_
= 100mA
V
DD
= 4V, I
OUT_
= 100mA
V
DD
= 14V, C
L
= 10nF (Note 3)
V
DD
= 14V, I
OUT_
= -100mA
V
DD
= 4V, I
OUT_
= -100mA
V
DD
UVLO
TTL versions
HNM versions
V
DD
rising
4
6
3
3.5
200
120
1
12
2
18
mA
14
14
3.85
V
V
mV
Fs
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
DRIVER OUTPUT (SOURCE) (OUTA, OUTB)
Peak Output Current (Sourcing)
Driver Output Resistance Pulling Up
(Note 4)
Peak Output Current (Sinking)
Driver Output Resistance Pulling
Down (Note 4)
I
PK-P
R
ON-P
4
0.88
0.91
4
0.5
0.52
0.95
1
1.85
1.95
A
I
DRIVER OUTPUT (SINK) (OUTA, OUTB)
I
PK-N
R
ON-N
A
I
2
MAX17600–MAX17605
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 12V, C
L
= 0F, at T
A
= -40NC to +125NC, unless otherwise noted. Typical values are specified at T
A
= +25NC. Parameters
specified at V
DD
= 4V apply to the TTL versions only.) (Note 2)
PARAMETER
LOGIC INPUT (INA, INB)
V
IN_
Logic-High Input Voltage
V
IN_
Logic-Low Input Voltage
Logic Input Hysteresis
Logic Input Leakage Current
Logic Input Bias Current
Logic Input Capacitance
ENABLE (ENA, ENB)
V
EN_H
High Level Voltage
V
EN_L
Low Level Voltage
Enable Hysteresis
Enable Pullup Resistor to V
DD
Propagation Delay from EN_ to OUT_
(Note 3)
EN_
HYS
Rpu
tpd
MAX17600/1/2
MAX17603/4/5
MAX17600/1/2
MAX17603/4/5
MAX17600/1/2
MAX17603/4/5
MAX17600/1/2
MAX17603/4/5
EN_ rising
EN_ falling
C
L
= 1nF
OUT_ Rise Time
t
R
C
L
= 4.7pF
C
L
= 10nF
C
L
= 1nF
OUT_ Fall Time
Turn-On Delay Time
Turn-Off Delay Time
t
F
t
D-ON
t
D-OFF
C
L
= 4.7nF
C
L
= 10nF
C
L
= 1nF
C
L
= 1nF
C
L
= 1nF
OUT_ Rise Time
t
R
C
L
= 4.7pF
C
L
= 10nF
C
L
= 1nF
OUT_ Fall Time
t
F
C
L
= 4.7nF
C
L
= 10nF
50
100
0.34
0.9
100
200
7
7
6
20
40
6
16
25
12
12
5
15
28
5
10
18
ns
ns
ns
ns
ns
ns
200
400
2.1
4.25
0.8
2.0
V
V
V
kI
ns
V
IH
V
IL
V
HYS
I
LKG
I
BIAS
C
IN
MAX17600/1/2
MAX17603/4/5
MAX17600/1/2
MAX17603/4/5
MAX17600/1/2
MAX17603/4/5
V
INA
= V
INB
= 0V or V
DD
(MAX17600/1/2)
V
INA
= V
INB
= 0V or V
DD
(MAX17603/4/5)
(Note 3)
-1
0.34
0.9
+0.02
10
10
+1
2.1
4.25
0.8
2.0
V
V
V
FA
FA
pF
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SWITCHING CHARACTERISTICS (V
DD
= 14V) (Note 3)
SWITCHING CHARACTERISTICS (V
DD
= 4.5V) (Note 3)
3
MAX17600–MAX17605
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= 12V, C
L
= 0F, at T
A
= -40NC to +125NC, unless otherwise noted. Typical values are specified at T
A
= +25NC. Parameters
specified at V
DD
= 4V apply to the TTL versions only.) (Note 2)
PARAMETER
Turn-On Delay Time
Turn-Off Delay Time
Matching Propagation Delays
Between Channel A and Channel B
SYMBOL
t
D-ON
t
D-OFF
C
L
= 1nF
C
L
= 1nF
CONDITIONS
MIN
TYP
12
12
MAX
UNITS
ns
ns
MATCHING CHARACTERISTICS (Note 3)
V
DD
= 14V, C
L
= 10nF
8
ns
Note 2:
All devices are production tested at T
A
= +25NC. Limits over temperature are guaranteed by design.
Note 3:
Design guaranteed by bench characterization. Limits are not production tested.
Note 4:
For SOIC package options, these are only Typ parameters.
Typical Operating Characteristics
(C
L
= 1nF, T
A
= +25NC, unless otherwise noted.)
RISE TIME vs. SUPPLY VOLTAGE
(C
OUT_
= 1nF)
MAX17600 toc01
FALL TIME vs. SUPPLY VOLTAGE
(C
OUT_
= 1nF)
4.5
4.0
FALL TIME (ns)
3.5
3.0
2.5
T
A
= +125°C
T
A
= +25°C
T
A
= +85°C
MAX17600 toc02
PROPAGATION DELAY TIME (LOW TO HIGH)
vs. SUPPLY VOLTAGE (C
OUT_
= 1nF)
MAX17600 toc03
6.0
5.5
5.0
RISE TIME (ns)
4.5
4.0
3.5
3.0
2.5
2.0
4
6
8
10
12
T
A
= 0°C
T
A
= -40°C
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
5.0
18
PROPAGATION DELAY TIME (ns)
16
14
12
10
T
A
= 0°C
8
T
A
= -40°C
12
T
A
= +125°C
T
A
= +85°C
T
A
= +25°C
2.0
1.5
14
4
6
T
A
= 0°C
T
A
= -40°C
8
10
12
14
4
6
8
10
14
SUPPLY VOLTAGE, V
DD
(V)
SUPPLY VOLTAGE, V
DD
(V)
SUPPLY VOLTAGE, V
DD
(V)
PROPAGATION DELAY TIME (HIGH TO LOW)
vs. SUPPLY VOLTAGE (C
OUT_
= 1nF)
MAX17600 toc04
SUPPLY CURRENT vs. SUPPLY VOLTAGE
(C
OUT_
= 0nF)
MAX17600 toc05
SUPPLY CURRRENT vs. LOAD CAPACITANCE
(V
DD
= 12V, C
OUTB
= 0nF)
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
1
MAX17600 toc06
18
T
A
= +125°C
PROPAGATION DELAY TIME (ns)
16
14
12
T
A
= 0°C
10
8
4
6
8
10
12
T
A
= -40°C
T
A
= +85°C
T
A
= +25°C
3.0
2.5
SUPPLY CURRENT (mA)
2.0
1.5
1.0
NO SWITCHING
0.5
1MHz
500kHz
SUPPLY CURRENT (mA)
500kHz
1MHz
NO
SWITCHING
100kHz
100kHz
14
4
6
8
10
12
14
2
3
4
5
6
7
8
9
10
SUPPLY VOLTAGE, V
DD
(V)
SUPPLY VOLTAGE, V
DD
(V)
LOAD CAPACITANCE (nF)
4
MAX17600–MAX17605
4A Sink /Source Current, 12ns, Dual MOSFET Drivers
Typical Operating Characteristics (continued)
(C
L
= 1nF, T
A
= +25NC, unless otherwise noted.)
SUPPLY CURRENT vs. TEMPERATURE
(V
DD
= 12V, C
OUT_
= 0nF)
MAX17600 toc07
INPUT THRESHOLD VOLTAGE
vs. SUPPLY VOLTAGE (C
OUT_
= 0nF)
MAX17600 toc08
SUPPLY CURRENT vs. LOGIC INPUT
VOLTAGE (V
DD
= 12V, C
OUT_
= 0nF)
1.2
SUPPLY CURRENT (mA)
1.1
1.0
0.9
0.8
0.7
0.6
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
LOGIC INPUT VOLTAGE (V)
FALLING
RISING
MAX17600 toc09
3.5
3.0
SUPPLY CURRENT (mA)
2.5
2.0
1.5
1.0
NO SWITCHING
0.5
-40
-20
0
20
40
60
80
100kHz
1MHz
500kHz
3.0
INPUT THRESHOLD VOLTAGE (V)
2.5
2.0
1.5
1.0
0.5
0
RISING
FALLING
1.3
100 120
4
6
8
10
12
14
AMBIENT TEMPERATURE (°C)
SUPPLY VOLTAGE, V
DD
(V)
LOGIC INPUT VOLTAGE
vs. OUTPUT VOLTAGE (MAX17601)
(V
DD
= +4V, C
OUTA
= 4.7nF)
MAX17600 toc10
LOGIC INPUT VOLTAGE
vs. OUTPUT VOLTAGE (MAX17601)
(V
DD
= +4V, C
OUTA
= 10nF)
INA
2V/div
MAX17600 toc11
LOGIC INPUT VOLTAGE
vs. OUTPUT VOLTAGE (MAX17601)
(V
DD
= +4V, C
OUTA
= 4.7nF)
INA
2V/div
MAX17600 toc12
OUTA
2V/div
OUTA
2V/div
INA
2V/div
OUTA
2V/div
20ns/div
20ns/div
20ns/div
LOGIC INPUT VOLTAGE
vs. OUTPUT VOLTAGE (MAX17601)
(V
DD
= +4V, C
OUTA
= 10nF)
MAX17600 toc13
LOGIC INPUT VOLTAGE
vs. OUTPUT VOLTAGE (MAX17601)
(V
DD
= +14V, C
OUTA
= 4.7nF)
MAX17600 toc14
LOGIC INPUT VOLTAGE
vs. OUTPUT VOLTAGE (MAX17601)
(V
DD
= +14V, C
OUTA
= 10nF)
MAX17600 toc15
INA
2V/div
INA
5V/div
INA
5V/div
OUTA
5V/div
OUTA
5V/div
OUTA
2V/div
20ns/div
20ns/div
20ns/div
5
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