Freescale Semiconductor
Technical Data
Document Number: MRF8S8260H
Rev. 1, 2/2012
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 790 to
895 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
Typical Single--Carrier W--CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1500 mA, P
out
= 70 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
850 MHz
875 MHz
895 MHz
G
ps
(dB)
21.3
21.4
21.1
D
(%)
36.2
37.4
37.5
Output PAR
(dB)
6.5
6.3
6.2
ACPR
(dBc)
--37.0
--36.7
--36.9
MRF8S8260HR3
MRF8S8260HSR3
850-
-895 MHz, 70 W AVG. 28 V
SINGLE W-
-CDMA
LATERAL N-
-CHANNEL
RF POWER MOSFETs
Capable of Handling 7:1 VSWR, @ 32 Vdc, 875 MHz, 390 Watts CW
(1)
Output Power (3 dB Input Overdrive from Rated P
out
), Designed for
Enhanced Ruggedness
Typical P
out
@ 1 dB Compression Point
≃
260 Watts CW
(1)
Features
100% PAR Tested for Guaranteed Output Power Capability
Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
Internally Matched for Ease of Use
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Designed for Digital Predistortion Error Correction Systems
Optimized for Doherty Applications
In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 16.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(2,3)
CW Operation @ T
C
= 25C
Derate above 25C
Symbol
V
DSS
V
GS
V
DD
T
stg
T
C
T
J
CW
CASE 465B-
-04
NI-
-880
MRF8S8260HR3
CASE 465C-
-03
NI-
-880S
MRF8S8260HSR3
Value
--0.5, +70
--6.0, +10
32, +0
-- 65 to +150
150
225
201
0.94
Unit
Vdc
Vdc
Vdc
C
C
C
W
W/C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 83C, 70 W CW, 28 Vdc, I
DQ
= 1500 mA, 895 MHz
Case Temperature 80C, 260 W CW
(1)
, 28 Vdc, I
DQ
= 1500 mA, 895 MHz
Symbol
R
JC
Value
(3,4)
0.36
0.31
Unit
C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Freescale Semiconductor, Inc., 2011--2012. All rights reserved.
MRF8S8260HR3 MRF8S8260HSR3
1
RF Device Data
Freescale Semiconductor, Inc.
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22--A114)
Machine Model (per EIA/JESD22--A115)
Charge Device Model (per JESD22--C101)
Class
2
A
IV
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 70 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate--Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 1380
Adc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 1500 mAdc, Measured in Functional Test)
Drain--Source On--Voltage
(V
GS
= 10 Vdc, I
D
= 3.0 Adc)
V
GS(th)
V
GS(Q)
V
DS(on)
1.5
2.3
0.1
2.3
3.0
0.24
3.0
3.8
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
Adc
Adc
Adc
Symbol
Min
Typ
Max
Unit
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 70 W Avg., f = 895 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
Power Gain
Drain Efficiency
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
G
ps
D
PAR
ACPR
IRL
19.6
35.5
5.8
—
—
21.1
37.5
6.2
--36.9
--16
22.6
—
—
--35.0
--12
dB
%
dB
dBc
dB
Typical Broadband Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, P
out
= 70 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @
5
MHz Offset.
Frequency
850 MHz
875 MHz
895 MHz
1. Part internally matched both on input and output.
(continued)
G
ps
(dB)
21.3
21.4
21.1
D
(%)
36.2
37.4
37.5
Output PAR
(dB)
6.5
6.3
6.2
ACPR
(dBc)
--37.0
--36.7
--36.9
IRL
(dB)
--9
--13
--16
MRF8S8260HR3 MRF8S8260HSR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 4. Electrical Characteristics
(T
A
= 25C unless otherwise noted)
(continued)
Characteristic
P
out
@ 1 dB Compression Point, CW
IMD Symmetry @ 80 W PEP, P
out
where IMD Third
Order Intermodulation
30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
Gain Flatness in 45 MHz Bandwidth @ P
out
= 70 W Avg.
Gain Variation over Temperature
(--30C to +85C)
Output Power Variation over Temperature
(--30C to +85C)
(1)
Symbol
P1dB
IMD
sym
Min
—
—
Typ
260
(1)
9.7
Max
—
—
Unit
W
MHz
Typical Performance
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 1500 mA, 850--895 MHz Bandwidth
VBW
res
G
F
G
P1dB
—
—
—
—
60
0.3
0.016
0.002
—
—
—
—
MHz
dB
dB/C
dB/C
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF8S8260HR3 MRF8S8260HSR3
RF Device Data
Freescale Semiconductor, Inc.
3
B1
C11
C30
--
R2
C10
C22
C9
R1
C23
C26
C2
C7 C8
C12
C27
C14 C15
CUT OUT AREA
C18
C16 C17
C19
C13
C28
C29
C20*
C1*
C3
C4
C5 C6
C21
C24
C25
C31
MRF8S8260H/HS
Rev. 1
*C1 and C20 are mounted vertically.
Figure 1. MRF8S8260HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S8260HR3(HSR3) Test Circuit Component Designations and Values
Part
B1
C1
C2
C3
C4
C5 C7
C6, C8
C9, C20, C22, C23, C24, C25
C10
C11
C12, C13
C14, C16
C15, C17
C18
C19
C21
C26, C27, C28, C29
C30, C31
R1
R2
PCB
Description
RF Bead
2.7 pF Chip Capacitor
100 pF Chip Capacitor
2.4 pF Chip Capacitor
5.1 pF Chip Capacitor
3.3 pF Chip Capacitors
3.9 pF Chip Capacitors
43 pF Chip Capacitors
4.7
F,
100 V Chip Capacitor
22
F
Electrolytic Capacitor
8.2 pF Chip Capacitors
3.9 pF Chip Capacitors
3.0 pF Chip Capacitors
0.7 pF Chip Capacitor
4.3 pF Chip Capacitor
0.1 pF Chip Capacitor
10
F,
50 V Chip Capacitors
470
F
Electrolytic Capacitors
2.0
,
1/4 W Chip Resistor
1 K, 1/4 W Chip Resistor
0.030,
r
= 3.5
Part Number
BLM21PG300SN1D
ATC100B2R7BT500XT
ATC100B101JT500XT
ATC100B2R4JT500XT
ATC100B5R1CT500XT
ATC100B3R3CT500XT
ATC100B3R9CT500XT
ATC100B430JT500XT
GRM55ER72A475KA01B
UUD1V220MCL1GS
ATC100B8R2CT500XT
ATC100B3R9CT500XT
ATC100B3R0CT500XT
ATC100B0R7BT500XT
ATC100B4R3CT500XT
ATC100B0R1BT500XT
GRM55DR61H106KA88L
MCGPR63V477M13X26--RH
P2.0VCT--ND
CRCW12061K00FKEA
TC350
Manufacturer
Murata
ATC
ATC
ATC
ATC
ATC
ATC
ATC
Murata
Nichicon
ATC
ATC
ATC
ATC
ATC
ATC
Murata
Multicomp
Panasonic
Vishay
Arlon
MRF8S8260HR3 MRF8S8260HSR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
D
, DRAIN
EFFICIENCY (%)
25
24
23
G
ps
, POWER GAIN (dB)
22
21
20
19
18
17
16
15
820
840
860
IRL
PARC
900
920
940
960
G
ps
ACPR
D
V
DD
= 28 Vdc, P
out
= 70 W (Avg.), I
DQ
= 1500 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 7.5 dB @
0.01% Probability on CCDF
38
36
34
32
30
--36
ACPR (dBc)
--37
--38
--39
--40
--41
880
980
f, FREQUENCY (MHz)
0
--4
--8
--12
--16
--20
IRL, INPUT RETURN LOSS (dB)
--1
--1.2
--1.4
--1.6
--1.8
--2
PARC (dB)
Figure 2. Output Peak- -Average Ratio Compression (PARC)
-to-
Broadband Performance @ P
out
= 70 Watts Avg.
--20
--30
--40
--50
--60
--70
IMD, INTERMODULATION DISTORTION (dBc)
V
DD
= 28 Vdc, P
out
= 80 W (PEP), I
DQ
= 1500 mA
Two--Tone Measurements, (f1 + f2)/2 = Center
Frequency of 875 MHz
IM3--U
IM3--L
IM5--U
IM5--L
IM7--L
IM7--U
1
10
TWO--TONE SPACING (MHz)
100
Figure 3. Intermodulation Distortion Products
versus Two-
-Tone Spacing
22
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
21.5
G
ps
, POWER GAIN (dB)
21
20.5
20
19.5
19
1
0
--1
--2
--2 dB = 89.6 W
--3
--4
--5
--3 dB = 119.8 W
V
DD
= 28 Vdc, I
DQ
= 1500 mA, f = 875 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
40
60
80
100
120
G
ps
32
PARC
26
20
140
ACPR
--1 dB = 63.8 W
D
44
38
56
50
--25
--30
--35
--40
--45
--50
--55
ACPR (dBc)
P
out
, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio
-to-
Compression (PARC) versus Output Power
MRF8S8260HR3 MRF8S8260HSR3
RF Device Data
Freescale Semiconductor, Inc.
5
D
DRAIN EFFICIENCY (%)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
