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1N4448TR

产品描述diodes - general purpose, power, switching Hi conductance fast
产品类别分立半导体    二极管   
文件大小136KB,共6页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
标准
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1N4448TR概述

diodes - general purpose, power, switching Hi conductance fast

1N4448TR规格参数

参数名称属性值
Brand NameFairchild Semiconductor
是否无铅不含铅
是否Rohs认证符合
厂商名称Fairchild
零件包装代码DO-35
包装说明O-XALF-W2
针数2
制造商包装代码AXIAL LEADED; GLASS; JEDEC DO204 ; VARIATION AH
Reach Compliance Codecompliant
ECCN代码EAR99
Samacsys Confidence3
Samacsys StatusReleased
Samacsys PartID969706
Samacsys Pin Count2
Samacsys Part CategoryDiode
Samacsys Package CategoryDiodes, Axial Diameter Horizontal Mounting
Samacsys Footprint Name1N4448TR
Samacsys Released Date2019-02-28 04:53:20
Is SamacsysN
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.62 V
JEDEC-95代码DO-35
JESD-30 代码O-XALF-W2
JESD-609代码e3
最大非重复峰值正向电流2 A
元件数量1
端子数量2
最高工作温度175 °C
最大输出电流0.2 A
封装主体材料UNSPECIFIED
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)NOT SPECIFIED
最大功率耗散0.5 W
认证状态Not Qualified
最大重复峰值反向电压100 V
最大反向恢复时间0.004 µs
表面贴装NO
端子面层Matte Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

文档预览

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1N/FDLL 914A/B / 916/A/B / 4148 / 4448 — Small Signal Diode
April 2013
1N/FDLL 914A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Cathode Band
LL-34 COLOR BAND MARKING
DEVICE
FDLL914
FDLL914A
FDLL914B
FDLL4148
FDLL4448
1ST BAND
BLACK
BLACK
BLACK
BLACK
BLACK
SOD80
LL-34
DO-35
Cathode is denoted with a black band
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
-1st band denotes cathode terminal
and has wider width
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
RRM
I
O
I
F
I
f
I
FSM
T
STG
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
DC Forward Current
Recurrent Peak Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Pulse Width = 1.0 s
Pulse Width = 1.0
μs
Value
100
200
300
400
1.0
4.0
-65 to +200
Units
V
mA
mA
mA
A
A
°C
°C
Operating Junction Temperature
175
T
J
Note:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Max.
1N/FDLL 914/A/B / 4148 / 4448
500
300
Units
mW
°C/W
© 2007 Fairchild Semiconductor Corporation
1N/FDLL 914A/B / 916/A/B / 4148 / 4448 Rev. 1.1.1
www.fairchildsemi.com
1

 
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