ACT SERIES, QUAD 2-INPUT NOR GATE, CDIP14
| 参数名称 | 属性值 |
| 包装说明 | DIP, DIP14,.3 |
| Reach Compliance Code | unknow |
| 系列 | ACT |
| JESD-30 代码 | R-GDIP-T14 |
| JESD-609代码 | e0 |
| 长度 | 19.43 mm |
| 负载电容（CL） | 50 pF |
| 逻辑集成电路类型 | NOR GATE |
| 最大I（ol） | 0.024 A |
| 功能数量 | 4 |
| 输入次数 | 2 |
| 端子数量 | 14 |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP14,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 电源 | 5 V |
| Prop。Delay @ Nom-Su | 9.5 ns |
| 传播延迟（tpd） | 9.5 ns |
| 认证状态 | Not Qualified |
| 施密特触发器 | NO |
| 筛选级别 | MIL-STD-883 |
| 座面最大高度 | 5.08 mm |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子面层 | TIN LEAD |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 宽度 | 7.62 mm |
| Base Number Matches | 1 |
| 5962-9218101MCA | 54ACTQ02DMQB | 5962-9218101MDA | 54ACTQ02LMQB | 5962-9218101M2A | 54ACTQ02FMQB | |
|---|---|---|---|---|---|---|
| 描述 | ACT SERIES, QUAD 2-INPUT NOR GATE, CDIP14 | ACT SERIES, QUAD 2-INPUT NOR GATE, CDIP14 | ACT SERIES, QUAD 2-INPUT NOR GATE, CDFP14, CERPACK-14 | ACT SERIES, QUAD 2-INPUT NOR GATE, CQCC20 | ACT SERIES, QUAD 2-INPUT NOR GATE, CQCC20 | ACT SERIES, QUAD 2-INPUT NOR GATE, CDFP14, CERAMIC, FP-14 |
| 包装说明 | DIP, DIP14,.3 | DIP, DIP14,.3 | DFP, FL14,.3 | QCCN, LCC20,.35SQ | QCCN, LCC20,.35SQ | DFP, FL14,.3 |
| Reach Compliance Code | unknow | unknown | unknown | unknown | unknown | unknown |
| 系列 | ACT | ACT | ACT | ACT | ACT | ACT |
| JESD-30 代码 | R-GDIP-T14 | R-GDIP-T14 | R-GDFP-F14 | S-CQCC-N20 | S-CQCC-N20 | R-GDFP-F14 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 负载电容（CL） | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF | 50 pF |
| 逻辑集成电路类型 | NOR GATE | NOR GATE | NOR GATE | NOR GATE | NOR GATE | NOR GATE |
| 最大I（ol） | 0.024 A | 0.024 A | 0.024 A | 0.024 A | 0.024 A | 0.024 A |
| 功能数量 | 4 | 4 | 4 | 4 | 4 | 4 |
| 输入次数 | 2 | 2 | 2 | 2 | 2 | 2 |
| 端子数量 | 14 | 14 | 14 | 20 | 20 | 14 |
| 最高工作温度 | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C | 125 °C |
| 最低工作温度 | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C | -55 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | DIP | DFP | QCCN | QCCN | DFP |
| 封装等效代码 | DIP14,.3 | DIP14,.3 | FL14,.3 | LCC20,.35SQ | LCC20,.35SQ | FL14,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | SQUARE | SQUARE | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | FLATPACK | CHIP CARRIER | CHIP CARRIER | FLATPACK |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 传播延迟（tpd） | 9.5 ns | 9.5 ns | 9.5 ns | 9.5 ns | 9.5 ns | 9.5 ns |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 施密特触发器 | NO | NO | NO | NO | NO | NO |
| 筛选级别 | MIL-STD-883 | MIL-STD-883 Class B | MIL-STD-883 | MIL-STD-883 Class B | MIL-STD-883 | MIL-STD-883 Class B |
| 座面最大高度 | 5.08 mm | 5.08 mm | 2.032 mm | 1.905 mm | 1.905 mm | 2.032 mm |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY | MILITARY |
| 端子面层 | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | FLAT | NO LEAD | NO LEAD | FLAT |
| 端子节距 | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | QUAD | QUAD | DUAL |
| 宽度 | 7.62 mm | 7.62 mm | 6.35 mm | 8.89 mm | 8.89 mm | 6.35 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
| 长度 | 19.43 mm | 19.43 mm | - | 8.89 mm | 8.89 mm | - |
| Prop。Delay @ Nom-Sup | - | 9.5 ns | 9.5 ns | 9.5 ns | 9.5 ns | 9.5 ns |
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