NBXSBB020, NBXSBA020
3.3 V, 280 MHz LVPECL
Clock Oscillator
The NBXSBB020/NBXSBA020 single frequency crystal oscillator
(XO) is designed to meet today’s requirements for 3.3 V LVPECL
clock generation applications. The device uses a high Q fundamental
crystal and Phase Lock Loop (PLL) multiplier to provide 280 MHz,
ultra low jitter and phase noise LVPECL differential output.
This device is a member of ON Semiconductor’s PureEdget clock
family that provides accurate and precision clock solutions.
Available in 5 mm x 7 mm SMD (CLCC) package on 16 mm tape
and reel in quantities of 1,000. Frequency stability options available as
either 50 PPM NBXSBA020 or 20 PPM NBXSBB020.
Features
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6 PIN CLCC
LN SUFFIX
CASE 848AB
LVPECL Differential Output
Uses High Q Fundamental Mode Crystal and PLL Multiplier
Ultra Low Jitter and Phase Noise
−
0.4 ps (12 kHz
−
20 MHz)
Output Frequency
−
280 MHz
Hermetically Sealed Ceramic SMD Package
RoHS Compliant
Operating Range 3.3 V
±10%
Total Frequency Stability
−
±20
PPM* or
±50
PPM
MARKING DIAGRAMS
NBXSBB020
280
AAWLYYWWG
NBXSBA020
280
AAWLYYWWG
Applications
•
Servers
NBXSBB020 = NBXSBB020 (±20 PPM)*
NBXSBA020 = NBXSBA020 (±50 PPM)
280
= Output Frequency (MHz)
AA
= Assembly Location
WL
= Wafer Lot
YY
= Year
WW
= Work Week
G
= Pb−Free Package
V
DD
6
CLK CLK
5 4
ORDERING INFORMATION
Device
Package
CLCC−6
(Pb−Free)
CLCC−6
(Pb−Free)
CLCC−6
(Pb−Free)
Shipping
†
1000/
Tape & Reel
1000/
Tape & Reel
100/
Tape & Reel
NBXSBB020LN1TAG*
NBXSBA020LN1TAG
NBXSBA020LNHTAG
Crystal
PLL
Clock
Multiplier
1
OE
2
NC
3
GND
Figure 1. Simplified Logic Diagram
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
* Please contact sales office for availability
©
Semiconductor Components Industries, LLC, 2010
February, 2010
−
Rev. 5
1
Publication Order Number:
NBXSBB020/D
NBXSBB020, NBXSBA020
OE
NC
GND
1
2
3
6
5
4
V
DD
CLK
CLK
Figure 2. Pin Connections
(Top View)
Table 1. PIN DESCRIPTION
Pin No.
1
2
3
4
5
6
Symbol
OE
NC
I/O
LVTTL/LVCMOS
Control Input
N/A
Description
Output Enable Pin. When left floating pin defaults to logic HIGH and output is active.
See OE pin description Table 2.
No Connect.
Ground 0 V.
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á
Á Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á
Á Á Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
Á Á Á
Á
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁÁÁÁÁ
ÁÁÁÁÁÁÁÁ
GND
CLK
CLK
V
DD
Power Supply
LVPECL Output
LVPECL Output
Power Supply
Non−Inverted Clock Output. Typically loaded with 50
W
receiver termination resistor to
V
TT
= V
DD
−
2 V.
Inverted Clock Output. Typically loaded with 50
W
receiver termination resistor to
V
TT
= V
DD
−
2 V.
Positive power supply voltage. Voltage should not exceed 3.3 V
±10%.
Table 2. OUTPUT ENABLE TRI−STATE FUNCTION
OE Pin
Open
HIGH Level
LOW Level
Output Pins
Active
Active
High Z
Table 3. ATTRIBUTES
Characteristic
Internal Default State Resistor
ESD Protection
Human Body Model
Machine Model
Value
170 kW
2 kV
200 V
Meets or Exceeds JEDEC Standard EIA/JESD78 IC Latchup Test
1. For additional Moisture Sensitivity information, refer to Application Note AND8003/D.
Table 4. MAXIMUM RATINGS
Symbol
V
DD
I
out
T
A
T
stg
T
sol
Parameter
Positive Power Supply
LVPECL Output Current
Operating Temperature Range
Storage Temperature Range
Wave Solder
See Figure 5
Condition 1
GND = 0 V
Continuous
Surge
Condition 2
Rating
4.6
25
50
−40
to +85
−55
to +120
260
Units
V
mA
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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NBXSBB020, NBXSBA020
Table 5. DC CHARACTERISTICS
(V
DD
= 3.3 V
±
10%, GND = 0 V, T
A
=
−40°C
to +85°C) (Note 2)
Symbol
I
DD
V
IH
V
IL
I
IH
I
IL
V
OH
V
OL
V
OUTPP
Characteristic
Power Supply Current (Note 2)
OE and FSEL Input HIGH Voltage
OE and FSEL Input LOW Voltage
Input HIGH Current
Input LOW Current
OE
FSEL
OE
FSEL
V
DD
= 3.3 V
Output LOW Voltage (Note 2)
V
DD
= 3.3 V
Output Voltage Amplitude (Note 2)
2000
GND
−
300
−100
−100
−100
−100
V
DD
−1195
2105
V
DD
−1945
1355
700
Conditions
Min.
Typ.
75
Max.
100
V
DD
800
+100
+100
+100
+100
V
DD
−945
2355
V
DD
−1600
1700
Units
mA
mV
mV
mA
mA
mV
mV
mV
Output HIGH Voltage (Note 2)
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Measurement taken with outputs terminated with 50 ohm to V
DD
−2
V. See Figure 4.
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NBXSBB020, NBXSBA020
Table 6. AC CHARACTERISTICS
(V
DD
= 3.3 V
±
10%, GND = 0 V, T
A
=
−40°C
to +85°C) (Note 3)
Symbol
f
CLKOUT
Df
Characteristic
Output Clock Frequency
Frequency Stability
−
NBXSBB020
Frequency Stability
−
NBXSBA020
Phase−Noise Performance
f
CLKout
= 280 MHz
(See Figure 3)
0°C to +70°C
−40°C
to +85°C
(Note 4)
100 Hz of Carrier
1 kHz of Carrier
10 kHz of Carrier
100 kHz of Carrier
1 MHz of Carrier
10 MHz of Carrier
N
SP
t
jit
(F)
t
jitter
Spurious Noise
RMS Phase Jitter
Cycle to Cycle, RMS
Cycle to Cycle, Peak−to−Peak
Period, RMS
Period, Peak−to−Peak
t
OE/OD
t
DUTY_CYCLE
t
R
t
F
t
start
Output Enable/Disable Time
Output Clock Duty Cycle
(Measured at Cross Point)
Output Rise Time (20% and 80%)
Output Fall Time (80% and 20%)
Start−up Time
Aging
1
st
Year
Every Year After 1
st
48
50
250
250
1
(Note 5)
12 kHz to 20 MHz
1000 Cycles
1000 Cycles
10,000 Cycles
10,000 Cycles
0.4
2
13
1
10
−102
−114
−123
−123
−132
−157
−60
0.9
8
30
4
20
200
52
400
400
5
3
1
Conditions
Min.
Typ.
280
±20
±50
Max.
Units
MHz
PPM
F
NOISE
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc
ps
ps
ps
ps
ps
ns
%
ps
ps
ms
ppm
ppm
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 Ifpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
3. Measurement taken with outputs terminated with 50 ohm to V
DD
−2
V. See Figure 4.
4. Parameter guarantees 10 years of aging. Includes initial stability at 25°C, shock, vibration, and first year aging.
5. Guaranteed by design and verified at qualification. Not tested in production.
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4
NBXSBB020, NBXSBA020
Figure 3. Typical Phase Noise Plot
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