PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561) 283-4500 FAX: (561) 286-8914
Website: http://www.semi-tech-inc.com
CASE OUTLINE:
TO-220
TYPE:
MTP4N40
HIGH VOLTAGE POWER MOSFET
N-CHANNEL
ABSOLUTE MAXIMUM RATING:
Drain – Source Voltage
Drain – Gate Voltage
Drain Current – Continuous
Drain Current – Pulsed
Gate – Source Voltage
Power Dissipation
Inductive Current
Operating and Storage Temperature
Lead Temperature
Vds
Vdg
Id
Idm
Vgs
Pd
IL
Tj & Tstg
From Case
400
400
4.0
10
±20
75
-65 to +150
275
Volts
Volts
Amps
Amps
Volts
W
Amps
°C
ELECTRICAL CHARACTERISTICS TA @ 25°C
°
Parameters
Symbol
Test Conditions
Drain Source
BVdss
ID = .25MA
Breakdown Voltage
Gate Threshold Voltage Vgs(th)
ID = 1MA
ID = 1MA, Tj = 100°C
Gate – Body Leakage
Igss
VGS = 20V
Current
Zero Gate Voltage
Idss
VDS = 320V
Drain Current
VDS = 320V, Tj = 125°C
On State Drain Current
Id(on)
Drain Source On
Resistance
Forward
Transconductance
Drain-Source On
Voltage
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Rds(on)
gfs
VDS(on)
Ciss
Coss
Crss
ID = 2.0A, VGS = 10V
ID = 2.0A, VGS = 15V
ID = 4.0A, VDS = 10V
ID = 2.0A, VDS = 10V
VDS = 25V, f = 1 MHZ
VDS = 25V, f = 1 MHZ
VDS = 25V, f = 1 MHZ
Min
400
2.0
1.5
Typ
Max
Unit
V
V
nA
MA
MA
A
Ω
mhos
4.5
4.0
100
0.2
1.0
1.5
1.5
7.5
6.0
1200
300
80
V
V
pF
pF
pF
Page 1 of 2
TYPE: MTP4N40
Drain Source Diode Characteristics
Forward On Voltage
IS =4.0A
Reverse Recovery Time
IS = 4.0A
Reverse Recovery Charge
Total Gate Charge
VDS = 320V, VGS = 10V
Gate – Source Charge
VDS = 320V, VGS = 10V
Gate – Drain Charge
VDS = 320V, VGS = 10V
*TYPICAL
Symbol
Vsd
trr
Qrr
Qg
Qgs
Qgd
27*
17*
10*
Min
Max
1.4
210*
Units
V
ns
nC
nC
nC
nC
Switching Characteristics
Turn-On Time
Turn-Off Time
Delay Time (Turn On)
Rise Time
Delay Time (Turn Off)
Fall Time
VDD = 25V
ID =2.0A
Rgen = 50Ω
Symbol
Ton
Toff
td(on)
tr
td(off)
tf
Min
Max
Units
50
100
200
100
ns
ns
ns
ns
Thermal Characteristics
Junction To Case
Junction To Ambient
Internal Drain Inductance
Internal Source Inductance
*TYPICAL
Symbol
RθJC
RθJA
Ld
Ls
Min
Max
1.67
30
3.5*
7.5*
Units
°C/W
°C/W
nH
nH
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