L: output is low level (weak pull down) oscillation stops
SiTime Corporation
Rev. 1.04
990 Almanor Avenue, Suite 200
Sunnyvale, CA 94085
(408) 328-4400
www.sitime.com
Revised Sept. 19, 2008
SiT8002
Description
The SiT8002 oscillator family is composed of the world’s
smallest, high-performance programmable oscillators. The
SiT8002 is suitable for use in clock generation for consumer,
portable, industrial, automotive, and computation applications.
This oscillator family is packaged in standard low-cost plastic
QFN-type IC packages with footprints that match common
quartz surface mount products.
MEMS resonators are 1000x smaller by volume than quartz
resonators and are built in high volume CMOS fabs instead of
small custom manufacturing facilities. Due to their small size,
massive lot sizes, and simpler manufacturing processes
MEMS oscillators are inherently more reliable, have more
consistent performance and are always in stock.
The SiT8002, by eliminating the quartz crystals, has improved
immunity to the environmental effects of vibration, shock,
strain, and humidity.
To order samples, go to www.sitime.com and click on Request
Sample” link.
Absolute Maximum Ratings
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual
performance of the IC is only guaranteed within the operational specifications not absolute maximum ratings.
Ab
solute Maximum Table
Parameter
Storage Temperature
VDD
Electrostatic Discharge
Theta JA ( with copper plane on VDD and GND)
Theta JC (with PCB traces of 0.010 inch to all pins)
Soldering Temperature (follow standard Pb free soldering guidelines)
Number of Program Writes
Program Retention over -40 to 125C, Process, VDD (0 to 3.6V)
–
–
Min.
-65
-0.5
Max.
150
+3.65
6000
75
24
260
1
1,000+
Unit
°C
V
V
°C/W
°C/W
°C
NA
years
Operating Conditions
Parameter
Supply Voltages, VDD
[1]
Min.
2.97
2.25
1.7
Typ.
3.3
2.5
1.8
-
-
-
-
Max.
3.63
2.75
1.9
70
85
15
200
Unit
V
V
V
°C
°C
pF
ms
Extended Commercial OperatingTemperature
Industrial Operating Temperature
Maximum Load
Capacitance
[2]
VDD Ramp Time
-20
-40
-
0
Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensibility Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Notes:
1. The 2.5V device can operate from 2.25V to 3.63V with higher output drive, however, the data sheet parameters cannot be guaranteed. Please contact factory for
this option.
2. The output driver strenght can be programmed to drive up to 30pF load. Please contact factory for this option.
Page 2 of 7
SiT8002
DC Electrical Specifications
@VDD = 3.3V ±10%, -40 to 85°C
Parameter
Output Voltage High
Output Voltage Low
Input Voltage High
Input Voltage Low
Operating Current
Standby Current
Power Up Time
Condition
IOH = -9 mA
IOL = 9 mA
Pin 1
Pin 1
Output frequency = 65 MHz, 15 pF load
Output is weakly pulled down, ST = GND
Time from minimum power supply voltage
Min.
90
-
70
-
-
-
-
Typ.
-
-
-
-
-
30
12
Max.
-
10
-
30
22
50
50
Unit
%Vdd
%Vdd
%Vdd
%Vdd
mA
uA
ms
@VDD = 2.5V ±10%, -40 to 85°C
Parameter
Output Voltage High
Output Voltage Low
Input Voltage High
Input Voltage Low
Operating Current
Standby Current
Power Up Time
Condition
IOH = -7 mA
IOL = 7 mA
Pin 1
Pin 1
Output frequency = 65 MHz, 15 pF load
Output is weakly pulled down, ST = GND
Time from minimum power supply voltage
Min.
90
-
70
-
-
-
-
Typ.
-
-
-
-
-
30
12
Max.
-
10
-
30
22
50
50
Unit
%Vdd
%Vdd
%Vdd
%Vdd
mA
uA
ms
@VDD = 1.8V ±5%, -40 to 85°C
Parameter
Output Voltage High
Output Voltage Low
Input Voltage High
Input Voltage Low
Operating Current
Standby Current
Power Up Time
Condition
IOH = -5 mA
IOL = 5 mA
Pin 1
Pin 1
Output frequency = 65 MHz, 15 pF load
Output is weakly pulled down, ST = GND
Time from minimum power supply voltage
Min.
90
-
70
-
-
-
-
Typ.
-
-
-
-
-
30
12
Max.
-
10
-
30
19
50
50
Unit
%Vdd
%Vdd
%Vdd
%Vdd
mA
uA
ms
Page 3 of 7
SiT8002
AC Electrical Specifications
@VDD = 3.3V ±10%, -40 to 85°C
Parameter
Clock Output Frequency
Frequency
Tolerance
[3]
Inclusive of initial tolerance, operating temper-
ature, rated power supply voltage change, load
change,aging, shock and vibration
First year
Output frequency= 1 MHz to 125 MHz
15 pF Load, 20% to 80% VDD
15 pF Load, 80% to 20% VDD
Output frequency = 24 MHz
Output frequency = 100 MHz
Condition
Min.
1
-30
-50
-100
-
45
-
-
-
-
Typ.
-
-
-
-
-
-
1.0
1.0
-
-
Max.
125
+30
+50
+100
1
55
2.0
2.0
±98
±60
Unit
MHz
ppm
ppm
ppm
ppm
%
ns
ns
ps
ps
Aging
Clock Output Duty Cycle
Clock Output Rise Time
Clock Output Fall Time
Pk-pk Period Jitter
@VDD = 2.5V ±10%, -40 to 85°C
Parameter
Clock Output Frequency
Frequency Tolerance
[3]
Inclusive of initial tolerance, operating temper-
ature, rated power supply voltage change, load
change,aging, shock and vibration
First year
Output frequency= 1MHz to 125MHz
15 pF Load, 20% to 80% VDD
15 pF Load, 80% to 20% VDD
Output frequency = 24 MHz
Output frequency = 100 MHz
Condition
Min.
1
-30
-50
-100
-
45
-
-
-
-
Typ.
-
-
-
-
-
-
1.0
1.0
-
-
Max.
125
+30
+50
+100
1
55
2.0
2.0
±130
±60
Unit
MHz
ppm
ppm
ppm
ppm
%
ns
ns
ps
ps
Aging
Clock Output Duty Cycle
Clock Output Rise Time
Clock Output Fall Time
Pk-pk Period Jitter
@VDD = 1.8V ±5%, -40 to 85°C
Parameter
Clock Output Frequency
Frequency
Tolerance
[3]
Inclusive of initial tolerance, operating temper-
ature, rated power supply voltage change, load
change,aging, shock and vibration
First year
Output frequency= 1 MHz to 65MHz
Output frequency= 65 MHz to 125MHz
Clock Output Rise Time
Clock Output Fall Time
Pk-pk Period Jitter
15 pF Load, 20% to 80% VDD
15 pF Load, 80% to 20% VDD
Output frequency = 24 MHz
Output frequency = 100 MHz
Condition
Min.
1
-50
-100
-
45
40
-
-
-
-
Typ.
-
-
-
-
-
-
1.0
1.0
-
-
Max.
125
+50
+100
1
55
60
2.0
2.0
±185
±100
Unit
MHz
ppm
ppm
ppm
%
%
ns
ns
ps
ps
Aging
Clock Output Duty Cycle
Notes:
3. ±30 ppm is available only over extended commercial temperature range from-20 °C to +70 °C and VDD=2.5V or 3.3V.
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
ADI 近日宣布日立公司在其最新的消费类无线传输集线器 TP-WL700H 中使用 ADI 公司的 Advantiv ™高级电视解决方案 IC ，以提供高端的无线功能、灵活性和无缝高清 (HD) 连接。这款 TP-WL700H 集线器仅在日本市场供应，它是一款单机设备，专门用于为日立 Wooo UT 系列液晶电视提供无线高清娱乐内容。在日立公司最新的无线视...[详细]
汽车电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
