BYP 300
Preliminary data
FRED Diode
• Fast recovery epitaxial diode
• Soft recovery characteristics
Type
BYP 300
V
RRM
1200V
I
FRMS
6.5A
t
rr
55ns
Package
TO-218 AD
Ordering Code
C67047-A2250-A2
Maximum Ratings
Parameter
Mean forward current
Symbol
Values
4
Unit
A
6.5
15
I
FAV
I
FRMS
I
FSM
I
FRM
40
∫
i
2
dt
1.1
T
C
= 90 °C,
D
= 0.5
RMS forward current
Surge forward current, sine halfwave, aperiodic
T
j
= 100 °C,
f
= 50 Hz
Repetitive peak forward current
T
j
= 100 °C,
t
p
≤
10 µs
i
2
t
value
T
j
= 100 °C,
t
p
= 10 ms
Repetitive peak reverse voltage
Surge peak reverse voltage
Power dissipation
A
2
s
1200
1200
W
15
-40 ... + 150
-40 ... + 150
≤
3.8
≤
46
E
40 / 150 / 56
-
K/W
°C
V
V
RRM
V
RSM
P
tot
T
j
T
stg
R
thJC
R
thJA
-
-
T
C
= 90 °C
Chip or operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip-ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Semiconductor Group
1
09.96
BYP 300
Preliminary data
Electrical Characteristics,
at T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
min.
Static Characteristics
Forward voltage drop
Values
typ.
max.
Unit
V
F
-
-
2.3
2
0.01
0.05
0.15
3
-
V
I
F
= 4 A,
T
j
= 25 °C
I
F
= 4 A,
T
j
= 100 °C
Reverse current
I
R
-
-
-
0.25
-
-
mA
V
R
= 1200 V,
T
j
= 25 °C
V
R
= 1200 V,
T
j
= 100 °C
V
R
= 1200 V,
T
j
= 150 °C
AC Characteristics
Reverse recovery charge
Q
rr
-
0.8
-
µC
I
F
= 4 A,
V
CC
= 300 V,
di
F
/dt = -800 A/µs
T
j
= 100 °C
Peak reverse recovery current
I
RRM
-
22
-
A
I
F
= 4 A,
V
CC
= 300 V,
di
F
/dt = -800 A/µs
T
j
= 100 °C
Reverse recovery time
t
rr
-
55
-
ns
I
F
= 4 A,
V
CC
= 300 V,
di
F
/dt = -800 A/µs
T
j
= 100 °C
Storage time
t
S
-
30
-
-
-
0.8
-
I
F
= 4 A,
V
CC
= 300 V,
di
F
/dt = -800 A/µs
T
j
= 100 °C
Softfaktor
S
I
F
= 4 A,
V
CC
= 300 V,
di
F
/dt = -800 A/µs
T
j
= 100 °C
Semiconductor Group
2
09.96
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